RB495D Diodes Schottky barrier diode RB495D !External dimensions (Units : mm) 2.9±0.2 1.1 1.9±0.2 0.95 0.95 +0.1 −0.05 2.8±0.2 +0.2 −0.1 D3Q 0.4 0.8±0.1 1.6 !Features 1) Small surface mounting type. (SMD3) 2) Two diodes with common cathode for excellent installation efficiency. 3) High reliability. 0~0.1 +0.1 0.15 −0.06 (All leads have same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Construction Silicon epitaxial planar !Circuit !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltege VR 25 V A Mean rectifying current∗1 IO 0.4 IFSM 2 A Tj 125 °C Storage temperature Tstg −40~+125 °C Operating temperture Topr −30~+85 °C Peak forward surge current∗2 Junction temperature ∗1 Mean output current per element : IO / 2 ∗2 60Hz for 1 !Electrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit VF1 − − 0.30 V VF2 − − 0.50 V IF=200mA IR − − 70 µA VR=25V Note) ESD sensiteve product handling required. +0.2 −0.1 Conditions IF=10mA 0.3~0.6 !Applications Low current rectification RB495D Diodes CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 100m REVERSE CURRENT : IR (A) −40 ° C °C 25 °C 75 10m =1 2 5° C 100m Ta FORWARD CURRENT : IF (A) 1 1m 10m Ta=125°C 1m 75°C 100µ 25°C 10µ 0°C 100µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1µ 0 10 20 30 40 100 10 1 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 35