RB751S-40 / RB751V-40 Diodes Schottky barrier diode RB751S-40 / RB751V-40 !External dimensions (Units : mm) !Applications High speed switching For Detection RB751S-40 1.6±0.1 !Features 1) Small surface mounting type. (EMD2, UMD2) 2) Low reverse current and low forward voltage. 3) High reliability. 1.2±0.05 CATHODE MARK 5 0.12±0.05 0.3±0.05 0.8±0.05 0.6±0.1 ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523 RB751V-40 CATHODE MARK CATHODE MARK 2.5±0.2 5 1.7±0.1 1.7±0.1 2.5±0.2 !Construction Silicon epitaxial planar 5 0.1 +0.1 −0.05 0.3±0.05 1.25±0.1 0.7 +0.2 −0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 0.7 +0.2 −0.1 ∗ There are two different markings. !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA Peak forward surge current * IFSM 200 mA Junction temperature Tj 125 ˚C Storage temperature Tstg −40~+125 ˚C * 60 Hz for 1 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Forward voltage VF − − 0.37 V IF = 1mA Reverse current IR − − 0.5 µA VR = 30V Capacitance between terminals CT − 2.0 − pF VR = 1V, f = 1MHz Note) ESD sensitive product handling required. 0.1 +0.1 −0.05 0.3±0.05 1.25±0.1 Unit Conditions RB751S-40 / RB751V-40 Diodes 100µ 1000m Ta = 125˚C 1m REVERSE CURRENT : IR (A) 10m =1 25 ˚C 100m Ta = 75˚C Ta FORWARD CURRENT : IF (A) Typ. pulse measurement Ta = 25˚C 100µ Ta = -25˚C 10µ 1µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10µ Ta = 75˚C 1µ Ta = 25˚C 100n Ta = -25˚C 10n 1n 0 Typ. pulse measurement 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics 35 CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 100 Ta = 25˚C f = 1MHz 50 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics