RB731U Diodes Schottky barrier diode RB731U !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 1.1 +0.2 −0.1 2.8±0.2 1.6 !Features 1) Small surface mounting type. (SMD6) 2) Low VF and low IR. 3) Three diodes in parallel for easy installation. +0.2 −0.1 0.8±0.1 0.95 0.95 D3P +0.1 0.3 −0.05 0∼0.1 +0.1 0.15 −0.06 0.3∼0.6 !Applications High speed switching. ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 !Construction Silicon epitaxial planar !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 30 mA Peak forward surge current∗ IFSM 200 mA Junction temperature Tj 125 ˚C Storage temperature Tstg −40∼+125 ˚C ∗ 60 Hz for 1 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit VF − − 0.37 V Forward voltage Conditions IF=1mA Reverse current IR − − 1 µA VR=10V Capacitance between terminals CT − 2.0 − pF VR=1V, f=1MHz Note) ESD sensitive product handling required. RB731U Diodes !Electrical characteristic curves (Ta=25°C) 1000m 10m Ta=125˚C 1m Ta=75˚C Ta=25˚C Ta=−25˚C 100µ 10µ 1µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : VF (V) Fig.1 Forward characteristics Io CURRENT (%) 100 80 60 40 20 0 0 25 50 Ta=125˚C REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 100m 75 100 125 AMBIENT TEMPERATURE : Ta (˚C) Fig.4 Derating curve (mounting on glass epoxy PCBs) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100µ Typ. pulse measurement 10µ Ta=75˚C 1µ Ta=25˚C 100n Ta=−25˚C 10n 1n 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics 35 100 50 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) Fig.3 Capacitance between terminals characteristics