Data Sheet No.PD 60157-H IPS521G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Rds(on) 100mΩ (max) V clamp 50V I Limit 10A V open load 3V Description The IPS521G is a fully protected five terminal high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Typical Connection Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L Package + VCC + 5v 15K Status feedback Output pull-up resistor Vcc Dg Logic Rdg Rin Logic signal www.irf.com control Out In Gnd Load 8 Lead SOIC Logic Gnd Load Gnd 1 IPS521G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified). Symbol Parameter Min. Max. Vcc-50 Vcc+0.3 Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 Units Vout Voffset Maximum output voltage Vin Iin, max Maximum Input voltage -5 10 Vdg Idg, max Maximum diagnostic output voltage -0.3 5.5 V Maximum diagnostic output current -1 10 mA Isd cont. Diode max. permanent current (1) A -0.3 Maximum positive IN current (rth = 125 o C/W) V 5.5 — 1.4 Isd pulsed Diode max. pulsed current (1) ESD1 Electrostatic discharge voltage (Human Body) — 10 — 4 ESD2 — 0.5 Electrostatic discharge voltage (Machine Model) Test Conditions mA C=100pF, R=1500Ω, kV C=200pF, R=0Ω, L=10µH (1) Pd Maximum power dissipation (rth=125oC/W) — 1 Tj max. Max. storage & operating junction temp. -40 +150 Vcc max. Maximum Vcc voltage — 50 Min. Typ. — — & W o C V Thermal Characteristics Symbol Parameter Rth1 Rth2 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Max. Units Test Conditions a a o C/W 8 Lead SOIC Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Vcc VIH VIL Iout Tc=85oC Rin Rdg Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (TAmbient = 85oC, Tj = 125oC, Rth = 100oC/W) Recommended resistor in series with IN pin Recommended resistor in series with DG pin Min. Max. 5.5 4 -0.3 35 5.5 0.9 — 4 10 1.6 6 20 Units V A kΩ (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS521G Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. ON state resistance Tj = 25oC — 80 100 ON state resistance @ Vcc = 6V — 80 100 ON state resistance Tj = 150oC — 125 160 Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Ioh Iol Idg Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current 5.5 50 — — — — — — — 0 — 55 56 0.9 13 0.6 20 0.4 50 — 35 — 65 1.2 50 2 — — 120 25 leakage Diagnostic output leakage current — — 10 Vih Vil Iin, on In hyst. IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis — 1 — 0.1 2.2 1.9 70 0.25 3 — 200 0.5 Rds(on) Max. Units Test Conditions Vin = 5V, Iout = 5A @Tj=25o C Rds(on) (V cc=6V) Rds(on) mΩ Vin = 5V, Iout = 2.5A Vin = 5V, Iout = 5A @Tj=150oC V µA mA µA V µA Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V V µA V Vin = 5V Switching Electrical Characteristics Vcc = 14V, Resistive Load = 2.8Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Turn-on delay time Tr1 Rise time to Vout = Vcc - 5V Tr2 Rise time Vcc - 5V to Vout = 90% of Vcc dV/dt (on) Turn ON d V/dt Eon Turn ON energy Tdoff Turn-off delay time Tf Fall time to Vout = 10% of Vcc dV/dt (off) Turn OFF d V/dt Eoff Turn OFF energy Tdiag Vout to Vdiag propagation delay www.irf.com Min. a a — a — — — a — — Typ. Max. Units Test Conditions 10 25 130 0.7 1500 35 16 0.9 250 5 40 60 200 2 — 70 50 3 — 15 µs See figure 3 V/µs µJ µs V/µs µJ µs See figure 4 See figure 6 3 IPS521G Protection Characteristics Symbol Parameter Ilim Internal current limit T sd+ Over-temp. positive going threshold TsdOver-temp. negative going threshold V sc Short-circuit detection voltage (3) Vopen load Open load detection threshold Min. Typ. 7 — — 2 2 10 165 158 3 3 Max. Units Test Conditions 14 — — 4 4 A oC oC V V Vout = 0V See fig. 2 See fig. 2 See fig. 2 (3) Referenced to Vcc Functional Block Diagram VCC All values are typical 50V Over temperature 165°C 158°C Tj 62 V Charge pum p 2.7 V Level IN 2.2 V 7 V shift 200 KΩ driver Current limit DG + 10 A 7 V 40 Ω + 3V + Open load GN D Short-circuit - 3V VOUT Lead Assignments Vcc Vcc Vcc Vcc 1 GND IN DG OUT 8 Lead SOIC 4 www.irf.com IPS521G T clamp Vin Vin 5V 0V Iout T shutdown limiting cycling Ilim. Ids Iout ( + Vcc ) 0V Out T Tsd+ Tsd(160 ° ) V clamp ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram Vin Vcc 90% Vin Vcc - 5V Vout dV/dt on 90% 10% Td on Tr 1 dV/dt off Tr 2 Vout E1(t) 10% Iout1 Eon1 Iout2 Resistive load Td off E2 (t) Tf Inductive load Eon2 Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load www.irf.com Figure 4 - Switching times definition (turn-off) 5 IPS521G V in Dg Vcc Vcc Vcc -Vsc IN Out + Gnd L Vin 14 V V o ut Vout Vol R V d ia g 5v 0v Iout Diag off blanking Diag on blanking Rem : V load is negative during demagnetization T diag Figure 5 - Active clamp test circuit Figure 6 - Diagnostic delay definitions 200% 100 150% 50 100% 0 50% 0 5 10 15 20 25 30 Figure 7 - Rds(on) (mΩ) Vs Vcc (V) 6 35 -50 0 50 100 150 Figure 8 - Normalized Rds(on) (mΩ) Vs Tj (oC) www.irf.com IPS521G 10 100 1 50 0.1 0 0 2 4 6 8 10 Figure 9 - Rds(on) (mΩ) Vs Iout (A) Figure 10 - Max. Iout (A) Vs Load Inductance (uH) 5 10 0 rth SO8 std footprint 4 10 1inch² footprint Rthja= 60°C/W 3 1 2 Std. footprint Rthja= 100°C/W 0 ,1 1 0 0 ,0 1 25 50 75 100 125 Figure 11 - Max load current (A) Vs Tamb (oC) www.irf.com 150 Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (s) 7 IPS521G 15 Resistive load 3500 3000 Eon 2500 10 Eoff 2000 1500 5 1000 500 0 -50 0 50 100 0 150 0 Figure 13 - Ilim (A) Vs Tj (oC) 1 2 3 4 5 6 7 Figure 14 - Eon, Eoff (µJ) Vs Iout (A) 10000 150 125 1000 I=Imax vs Induct.(see fig.10) Diag on blanking 100 100 I=1.5A 75 10 50 1 25 Diag off blanking Figure 15 - Eon (µJ) Vs Load Inductance (µH) (see Fig. 3) 8 1E+06 1E+05 1E+04 1E+03 1E+02 0 1E+01 0.1 0 1 2 3 Figure 16 - Diag Blanking time (µS) Vs Iout (A) (resistive load - see Fig. 6) www.irf.com IPS521G 1.00E-03 1.00E-04 1.00E-05 1.00E-06 0 5 10 15 20 25 30 35 Figure 17 - Icc (mA) Vs Vcc (V) Case Outline - 8 Lead SOIC (MS-012AA) 01-0021 09 4/11/2000 www.irf.com 9