Preliminary Preliminary Product Description Stanford Microdevices SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.5V. The SGL-0163 can be operated at 3V for low power or 4V for medium power applications. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. Internally matched to 50 Ohm impedance, the SGL-0163 requires only an RF choke, DC blocking and bypass capacitors for external components. This device has an internal temperature compensation circuit and can be operated directly from 3-4V supply. Small Signal Gain vs. Frequency 20 dB 15 10 5 3V,11mA 4V,25mA 0 800 850 900 950 800-1000 MHz Low Noise Amplifier 50 Ohm, Silicon Germanium Product Features Low Noise Figure High Input Intercept Internal Temp. Compensation Circuit Internally Matched to 50 W Unconditionally Stable Low Power Consumption Single Voltage Supply Small Package: SOT-363 Applications Receivers Cellular, Fixed Wireless, Land Mobile 1000 Frequency MHz Sy mbol SGL-0163 Parameters: Test C onditions: Z0 = 50 Ohms, T = 25ºC U nits V cc = 3V Min. V cc = 3V Ty p. V cc = 3V Max. V cc = 4V Ty p. P 1dB Output Power at 1dB C ompressi on f = 900 MHz dB m 5.0 11.0 IIP3 Input Thi rd Order Intercept Poi nt Tone spaci ng = 1 MHz f = 900 MHz dB m 6.4 11.8 S 21 Small Si gnal Gai n f = 900 MHz dB NF 13.5 15.0 16.5 15.7 Noi se Fi gure, ZS = 50 Ohms f = 900 MHz dB 1.1 1.5 - Input VSWR f = 900 MHz - 1.8:1 1.5:1 - Output VSWR f = 900 MHz - 1.7:1 1.6:1 Reverse Isolati on f = 900 MHz S 12 ID Rth, j-l dB D evi ce C urrent mA Thermal Resi stance (juncti on - lead) o C /W 20.6 8.0 11.0 255 20.7 14.0 25.0 255 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101501 Rev A Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. P arameter S upply C urrent Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Pin # 1 2 3 5 6 U nit 45 mA Operati ng Temperature -40 to +85 ºC Maxi mum Input P ower 10 dB m -40 to +150 ºC Operati ng Juncti on Temperature Storage Temperature Range +150 ºC E S D voltage (Human B ody Model) 400 V Function D escription N/C No C onnecti on. N/C No C onnecti on. RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. V cc Supply connecti on. Thi s pi n should be bypassed wi th a sui table capaci tor(s). GND C onnected to ground. For best performance use vi a holes as close to ground leads as possi ble. RF OUT RF output and D C supply. Thi s pi n VC C requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. 4 Value D ev ice Schematic Vcc RF In Bias ckt with temp. comp. RF Out / Vcc Application Schematic Recommended Bias Resistor Values Supply Voltage(Vs) 3V 4V 5V 6V 7.5V Rbias (W) 3V, 11mA 0 91 180 270 430 Rbias (W) 4V, 25mA - 0 39 82 130 0.1µF Rbias 22pF Vs 22nH 50 Ohm microstrip 4 3 100pF 50 Ohm microstrip 6 5 100pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101501 Rev A Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Bias Voltage: 3V S21 vs. Frequency NF vs. Frequency 5 25 -40C 4.5 +25C 20 -40C 4 +85C +25C 85 15 dB dB 3.5 10 3 2.5 2 1.5 5 1 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 GHz GHz S11 vs. Frequency S22 vs. Frequency 0 0 -40C -40C +25C +85C dB dB -5 +25C -5 -10 +85C -10 -15 -15 -20 -20 -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 GHz 2 2.5 3 3.5 4 4.5 5 GHz Typical S-Parameters including evaluation board @ T = 25ºC S 11 S 21 S 12 S 22 Freq GH z dB An g dB An g dB An g dB An g 0.05 -1.65 -10.10 10.33 -113.20 -57.01 -159.32 -0.46 167.29 141.56 0.10 -1.53 -21.04 15.73 -136.59 -43.87 151.51 -0.66 0.20 -1.56 -46.05 19.90 -179.32 -34.97 116.17 -1.57 97.58 0.40 -3.78 -94.95 20.19 113.44 -26.97 68.69 -4.98 29.78 0.60 -6.95 -133.10 17.99 68.94 -23.59 36.36 -8.16 -15.35 0.70 -8.39 -149.91 16.89 51.21 -22.57 22.87 -9.40 -33.66 0.80 -9.73 -166.33 15.86 35.23 -21.42 10.59 -10.52 -50.18 0.90 -10.98 176.74 14.92 20.19 -20.60 -1.18 -11.55 -66.62 -82.02 1.00 -12.35 161.19 13.95 5.93 -19.97 -13.73 -13.08 1.10 -12.93 145.25 13.22 -6.67 -19.28 -24.32 -13.78 -91.62 1.20 -13.69 129.17 12.49 -19.64 -18.65 -35.19 -14.45 -105.95 1.40 -14.65 94.20 11.18 -44.96 -17.49 -56.66 -16.14 -133.73 1.60 -14.89 62.41 10.05 -69.31 -16.61 -78.17 -17.81 -161.98 1.80 -14.93 32.92 8.97 -93.12 -15.73 -99.63 -19.40 169.38 2.00 -14.55 5.79 7.99 -116.42 -15.11 -120.88 -20.92 139.03 3.00 -13.78 -98.28 3.45 132.95 -13.36 136.24 -20.92 -10.75 4.00 -10.54 167.77 1.28 38.56 -11.59 45.79 -19.10 -132.43 5.00 -9.66 43.52 0.66 -68.46 -9.48 -57.19 -19.70 109.26 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101501 Rev A Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Bias Voltage: 4V S21 vs. Frequency NF vs. Frequency 5 30 -40C 4.5 +25C 25 +25C 85 3.5 20 3 dB dB -40C 4 +85C 15 2.5 2 10 1.5 1 5 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 GHz GHz S11 vs. Frequency S22 vs. Frequency 0 0 -40C -40C +25C +25C dB dB -5 +85C -5 -10 +85C -10 -15 -15 -20 -20 -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 GHz 2 2.5 3 3.5 4 4.5 5 GHz Typical S-Parameters including evaluation board @ T = 25ºC S 11 S 21 S 12 S 22 Freq GH z dB An g dB An g dB An g dB An g 0.05 -2.92 -9.82 14.77 -117.69 -53.54 -168.24 -0.47 167.24 141.30 0.10 -2.70 -21.07 19.88 -145.20 -47.07 144.73 -0.72 0.20 -2.99 -47.78 23.03 166.72 -36.16 112.72 -2.08 97.31 0.40 -5.89 -93.30 21.61 101.88 -27.73 73.01 -5.97 35.05 0.60 -9.23 -127.00 18.96 61.46 -23.92 41.45 -9.22 -6.88 0.70 -10.80 -142.17 17.77 45.17 -22.81 28.77 -10.36 -24.66 0.80 -12.27 -157.37 16.71 30.14 -21.62 16.21 -11.55 -40.64 0.90 -13.74 -173.18 15.74 15.93 -20.65 2.77 -12.54 -57.27 1.00 -15.40 173.72 14.73 2.28 -19.80 -9.68 -14.27 -71.95 1.10 -16.01 157.95 13.98 -9.74 -19.18 -20.32 -14.92 -81.26 1.20 -16.97 140.99 13.24 -22.31 -18.40 -31.19 -15.57 -95.79 1.40 -18.21 105.07 11.96 -46.63 -17.18 -54.02 -17.56 -123.51 -150.83 1.60 -18.61 69.18 10.81 -70.42 -16.19 -75.95 -19.69 1.80 -18.63 37.53 9.70 -93.66 -15.42 -97.56 -21.78 179.48 2.00 -17.83 8.83 8.73 -116.57 -14.77 -119.57 -24.06 149.53 3.00 -16.16 -91.56 4.14 133.65 -13.07 135.52 -23.01 -11.64 4.00 -11.67 174.62 1.90 40.37 -11.41 45.11 -19.80 -138.02 5.00 -10.59 46.68 1.36 -66.52 -9.32 -59.16 -20.12 98.21 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101501 Rev A Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 6 5 4 Pin D esignation 1 L3 1 2 3 N/C 2 N/C 3 RF i n 4 V cc 5 GND 6 RF out / Vcc Package Dimensions Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) Note: Pin 1 is on lower left when you can read package marking 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101501 Rev A Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Evaluation Board layout L3 Suggested Components Manufacture P art N umber D escription Value Rohm MC H185A 200JK C apaci tor 22 pF Rohm MC H185A 101JK C apaci tor 100 pF Rohm MC H182FN104ZK C apaci tor 0.1 uF TOK O LL1608-FH22NJ Inductor 22 nH The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101501 Rev A