Preliminary Preliminary Product Description NGA-386 Stanford Microdevices’ NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Product Features • High Gain: 18.9dB at 1950Mhz • Cascadable 50 ohm: 1.2:1 VSWR • Patented GaAs HBT Technology • Operates from Single Supply • Low Thermal Resistance Package • Unconditionally Stable Small Signal Gain vs. Frequency 25 20 15 dB 10 5 Applications • Cellular, PCS, CDPD • Wireless Data, SONET 0 0 1 2 3 4 5 6 DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier 7 Frequency GHz Symbol Parameters: Test Conditions: Z0 = 50 Ohms, ID = 35 mA, T = 25ºC Units Min. Typ. P1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 14.5 15.0 15.6 IP3 Third Order Intercept Point Power out per tone = 0 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 25.8 27.0 27.0 S21 Small Signal Gain f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 20.9 18.9 18.0 MHz 2000 Bandwidth 3dB Bandwidth S11 Input VSWR f = DC - 5000 MHz - 1.2:1 S22 Output VSWR f = DC - 5000 MHz - 1.3:1 S12 Reverse Isolation f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 23.4 22.2 21.6 NF Noise Figure f = 2000 MHz dB 2.7 VD Device Voltage Rth, j-l Thermal Resistance (junction - lead) V 4.0 ºC/W 144 Max. The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101103 Rev C Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Value Unit Supply Current 90 mA Device Voltage 6.0 V -40 to +85 ºC +10 dBm Operating Temperature Maximum Input Power Storage Temperature Range -40 to +150 ºC +150 ºC Operating Junction Temperature Key parameters, at typical operating frequencies: Test Condition Typical 25ºC Unit 500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 21.3 25.1 14.6 26.8 23.6 dB dBm dBm dB dB 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 20.9 25.8 14.5 24.8 23.4 dB dBm dBm dB dB 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 18.9 27.0 15.0 22.0 22.2 dB dBm dBm dB dB 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 18.0 27.0 15.6 21.0 21.6 dB dBm dBm dB dB Parameter (ID = 35mA, unless otherwise noted) Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101103 Rev C Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Pin # Function Description 1 RF IN 2 GND 3 RF OUT/ BIAS 4 GND RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Same as Pin 2. Device Schematic Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) 5V 8V 9V 12V Rbi as (Ohms) 30 120 150 240 1uF 68pF R bias Vs For 9V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 50 ohm microstrip 2 1 3 100pF 100pF 4 Application Schematic for Operation at 1950 MHz 1uF 22pF R bias Vs 22nH 50 ohm microstrip 50 ohm microstrip 2 1 3 68pF 4 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101103 Rev C Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT S-parameters over frequency, at 25ºC S21, ID =35mA, T=25ºC S12, ID =35mA, T=25ºC 25 0 20 -5 -10 15 dB -15 dB 10 -20 5 -25 0 -30 0 1 2 3 4 5 6 0 7 1 2 Frequency GHz S11, ID =35mA, T=25ºC -5 -5 -10 -10 dB -15 dB -20 -25 -25 -30 -30 3 4 6 7 6 7 -15 -20 2 5 S22, ID =35mA, T=25ºC 0 1 4 Frequency GHz 0 0 3 5 6 0 7 Frequency GHz 1 2 3 4 5 Frequency GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101103 Rev C Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Typical S-Parameters, ID = 35mA ( No external matching, de-embedded to device leads) S11 S21 S12 S22 Freq GHz mag Ang dB mag Ang dB mag Ang mag Ang 0.05 0.038 180 21.7 12.126 178 -23.6 0.066 0 0.054 -180 0.10 0.032 172 21.6 12.024 176 -23.7 0.066 1 0.055 -179 0.20 0.034 156 21.5 11.923 171 -23.7 0.065 2 0.057 -177 0.30 0.037 147 21.5 11.854 167 -23.7 0.065 2 0.059 -174 0.40 0.042 136 21.4 11.760 162 -23.7 0.066 3 0.062 -174 0.50 0.046 130 21.3 11.656 158 -23.6 0.066 4 0.066 -173 0.60 0.048 123 21.2 11.489 154 -23.6 0.066 5 0.070 -174 0.70 0.051 118 21.1 11.340 150 -23.5 0.067 5 0.073 -173 0.80 0.057 115 21.0 11.163 145 -23.4 0.067 6 0.079 -175 0.90 0.058 111 20.8 11.020 142 -23.4 0.068 6 0.082 -176 1.00 0.061 108 20.7 10.818 138 -23.3 0.068 7 0.089 -177 1.10 0.064 104 20.5 10.589 134 -23.2 0.069 7 0.095 -178 1.20 0.066 101 20.3 10.371 130 -23.1 0.070 8 0.101 -180 1.30 0.068 99 20.2 10.220 127 -23.0 0.071 9 0.105 179 1.40 0.072 99 20.0 10.012 123 -22.9 0.072 9 0.112 177 1.50 0.073 96 19.8 9.750 119 -22.8 0.073 9 0.119 175 1.60 0.074 93 19.6 9.514 115 -22.6 0.074 9 0.126 173 1.70 0.075 93 19.4 9.367 113 -22.5 0.075 10 0.131 171 1.80 0.079 93 19.2 9.129 109 -22.4 0.076 10 0.139 169 1.90 0.080 92 19.0 8.907 106 -22.2 0.077 10 0.146 167 2.00 0.081 91 18.8 8.682 103 -22.1 0.078 10 0.154 164 2.20 0.085 91 18.4 8.321 97 -21.9 0.081 10 0.170 160 2.40 0.090 92 18.0 7.899 91 -21.6 0.083 10 0.188 154 2.60 0.096 94 17.6 7.581 86 -21.4 0.086 10 0.205 149 2.80 0.105 97 17.2 7.217 80 -21.1 0.089 9 0.224 144 3.00 0.113 100 16.8 6.916 75 -20.8 0.091 9 0.241 140 3.20 0.124 102 16.4 6.643 71 -20.6 0.093 8 0.258 136 3.40 0.136 103 16.0 6.289 65 -20.3 0.096 7 0.278 132 3.60 0.146 104 15.6 6.006 61 -20.1 0.099 7 0.293 128 3.80 0.158 105 15.2 5.735 57 -19.9 0.101 5 0.309 124 4.00 0.174 107 14.9 5.542 53 -19.7 0.104 5 0.318 122 4.50 0.215 105 14.1 5.041 42 -19.1 0.111 1 0.353 117 5.00 0.246 103 13.3 4.641 31 -18.6 0.117 -2 0.402 111 5.50 0.284 101 12.6 4.251 21 -18.3 0.122 -7 0.445 103 6.00 0.319 97 11.8 3.903 12 -18.0 0.126 -11 0.475 97 6.50 0.353 92 11.1 3.599 3 -17.7 0.130 -14 0.503 91 7.00 0.386 87 10.5 3.364 -6 -17.4 0.135 -19 0.534 84 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101103 Rev C Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Caution: ESD sensitive Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Size Devices/Reel NGA-386 7" 1000 Part Symbolization The part will be symbolized with a “N3” designator on the top surface of the package. Package Dimensions N3 PCB Pad Layout N3 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101103 Rev C Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Component Tape and Reel Packaging Tape Dimensions For 86 Outline DESCRIPTION SYMBOL SIZE (MM) Length Width Socket Depth Pitch Bottom Hole diameter A B H K P D1 6.10 ± 0.10 6.20 ± 0.10 3.10 ± 0.10 2.00 ± 0.10 8.00 ± 0.10 1.50 min. Perforation Diameter Pitch Position Do Po E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 Cover Tape Width Tape Thickness C t 9.10 ± 0.25 0.05 ± 0.01 Carrier Tape Width Tape Thickness W T 12.00 ± 0.30 0.30 ± 0.05 F P2 5.50 ± 0.05 2.00 ± 0.05 Cavity Distance Cavity to Perforation (Width Direction) Cavity to Perforation (Length Direction) The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101103 Rev C