Preliminary Product Description SGA-2363 Stanford Microdevices’ SGA-2363 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-2363 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 24 DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features • DC-2800 MHz Operation • 2.7V Single Voltage Supply • High Output Intercept: +20.0dBm typ. at 850 MHz • Low Noise Figure: 2.9 dB typ. at 850 MHz 18 dB 1 2 6 Frequency MHz Symbol 6000 3500 2400 1900 900 500 100 0 Applications • Broadband Gain Blocks • Cordless Phones • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers Parameters: Test Conditions: Z0 = 50 Ohms, Id = 20 mA, T = 25ºC Units Min. dB m dB m Typ. P 1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz S 21 Small Signal Gain f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2800 MHz dB dB dB S 12 Reverse Isolation f = DC - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 2800 MHz dB dB dB 20.9 21.3 21.2 S11 Input VSWR f = DC - 2000 MHz f = 2400 - 2800 MHz - 1.4:1 1.5:1 S 22 Output VSWR f = DC - 2000 MHz f = 2000 - 2800 MHz - 1.3:1 1.2:1 IP3 Third Order Intercept Point Power out per Tone = -10 dBm f = 850 MHz f = 1950 MHz dB m dB m 19.4 20.4 NF Noise Figure f = DC - 1000 MHz f = 1000 - 2400 MHz dB dB 2.9 3.4 TD Group Delay f = 1000 MHz pS VD Device Voltage V Max. 8.2 7.2 15.7 17.5 16.7 15.5 107 2.4 2.7 3.0 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100628 Rev A Preliminary Preliminary SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier Specification Parameter Bandw idth Frequency Range Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min Typ. Test Max. Unit 2800 MHz Condition T= 25C DC T= 25C 2.7 20 V mA 17.7 2.9 20.5 8.2 16.4 21.3 dB dB dB m dB m dB dB 17.4 2.9 19.4 8.2 15.7 21.3 dB dB dB m dB m dB dB 16.1 3.3 20.4 7.2 13.3 21.6 dB dB dB m dB m dB dB 15.6 3.6 19.2 6.8 12.3 21.6 dB dB dB m dB m dB dB T= 25C T= 25C T= 25C T= 25C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100628 Rev A Preliminary Preliminary SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier Pin # 1 2 3 4 5 6 Function Description GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. GND Sames as Pin 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Sames as Pin 1 GND Sames as Pin 1 RF OUT RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Device Schematic Application Schematic for +5V Operation at 900 MHz Note: A bias resistor is needed for stability over temperature 1uF 68pF 115 ohms VCC=+5V 33nH 50 ohm microstrip 50 ohm microstrip 1,2 3 6 100pF 100pF 4,5 Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 115 ohms VCC=+5V 22nH 50 ohm microstrip 50 ohm microstrip 1,2 3 6 68pF 4,5 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100628 Rev A Preliminary Preliminary SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier S21, Id =20mA, T=+25C 3500 6000 6000 -4 0 100 2400 -4 0 1900 -3 0 500 -3 0 6000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =20mA, T=+25C S11, Id =20mA, T=+25C 500 3500 Frequency MHz 0 100 2400 6000 Frequency MHz 1900 -4 0 900 0 500 -3 0 100 6 3500 dB -2 0 2400 12 1900 -1 0 900 18 500 0 100 dB S12, Id =20mA, T=+25C 24 Frequency MHz Frequency MHz S22, Id=20mA, Ta= +25C S11, Id=20mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100628 Rev A Preliminary Preliminary SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier S21, Id =20mA, T=-40C 6000 6000 100 3500 -4 0 2400 -4 0 1900 -3 0 500 -3 0 6000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =20mA, T=-40C S11, Id =20mA, T=-40C 500 3500 Frequency MHz 0 100 2400 6000 Frequency MHz 1900 -4 0 900 0 100 -3 0 3500 6 2400 dB -2 0 1900 dB 1 2 900 -1 0 500 18 100 0 500 S12, Id =20mA, T=-40C 24 Frequency MHz Frequency MHz S22, Id=20mA, T=-40C S11, Id=20mA, T=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-100628 Rev A Preliminary Preliminary SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier S21, Id =20mA, T=+85C 3500 6000 6000 -4 0 100 2400 -4 0 1900 -3 0 500 -3 0 6000 dB -2 0 3500 dB -2 0 2400 -1 0 1900 -1 0 900 0 900 S22, Id =20mA, T=+85C S11, Id =20mA, T=+85C 500 3500 Frequency MHz 0 100 2400 6000 Frequency MHz 1900 -4 0 900 0 500 -3 0 100 6 3500 dB -2 0 2400 12 1900 -1 0 900 18 500 0 100 dB S12, Id =20mA, T=+85C 24 Frequency MHz Frequency MHz S22, Id=20mA, T=+85C S11, Id=20mA, T=+85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-100628 Rev A Preliminary Preliminary SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier Part Number Ordering Information Absolute Maximum Ratings Parameter Value U nit Part Number Reel Siz e Devices/Reel 40 mA SGA-2363-TR1 7" 3000 -40 to +85 C +3 dB m Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range -40 to +85 C +125 C Operati ng Juncti on Temperature Recommended Bias Resistor Values Caution: Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 255° C/W 6 5 Supply Voltage(Vs) 3V 5V 7.5V 9V 12V Rbias (Ohms) 15 115 240 315 465 4 Pin Designation A23 Package Marking 1 2 3 1 GND 2 GND 3 RF in 4 GND 5 GND 6 RF out Package Dimensions when you can read package marking Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) Note: Pin 1 is on lower left 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10° 0.30 (0.012) 0.10 (0.0040 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-100628 Rev A