October 1997 FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series. -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. SOT-23 SuperSOTTM-8 SuperSOTTM-6 SO-8 SOIC-16 SOT-223 Mark:302 D S G Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) - Continuous - Pulsed FDV302P Units -25 V -8 V -0.12 A -0.5 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation FDV302P REV. F Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS mV / oC -20 -1 µA -10 µA -100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance mV / oC 1.9 -0.65 -1 -1.5 V VGS = -2.7 V, ID = -0.05 A 10.6 13 Ω VGS = -4.5 V, ID = -0.2 A 7.9 10 12 18 TJ =125°C ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID= -0.2 A -0.05 A 0.135 S 11 pF 7 pF 1.4 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note) VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50 Ω VDS = -5 V, ID = -0.2 A, VGS = -4.5 V 5 12 ns 8 16 ns 9 18 ns 5 10 ns 0.22 0.31 nC 0.11 nC 0.04 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A (Note) -1 -0.2 A -1.5 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV302P REV. F 0.2 2 -4.0 -3.5 V GS = -5.0V -4.5 RDS(ON), NORMALIZED -3.0 0.15 -2.7 -2.5 0.1 -2.0 0.05 0 0 1 2 3 DRAIN-SOURCE ON-RESISTANCE -I D , DRAIN-SOURCE CURRENT (A) Typical Electrical Characteristics V GS = -2.0 V 1.5 -2.7 -3.0 1 -4.0 -3.5 -4.5 0.5 4 -2.5 0 0.05 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. R DS(ON) ,ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 25 I D = -0.05A V GS = -2.7V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 0.08 15 10 5 0 -I S , REVERSE DRAIN CURRENT (A) 0.04 0.02 1.5 -V GS 2 1 2 GS 3 4 5 6 7 8 ,GATE TO SOURCE VOLTAGE (V) 0.5 125°C 1 0 Figure 4. On Resistance Variation with Gate-To- Source Voltage. 25°C 0.06 125 °C -V TA = -55°C V DS = -5V ID = -0.05A TA= 25°C 20 Figure 3. On-Resistance Variation with Temperature. -ID , DRAIN CURRENT (A) 0.15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0 0.5 0.1 -I D , DRAIN CURRENT (A) 2.5 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 VGS = 0V TJ = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV302P REV. F Typical Electrical And Thermal Characteristics 25 I D = -0.2A VDS = -5V 15 -10 6 -15 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 8 4 2 C iss 10 Coss 5 3 2 0 0 0.1 0.2 0.3 0.4 f = 1 MHz V GS = 0 V 1 0.1 0.5 Q g , GATE CHARGE (nC) 2 5 10 15 25 Figure 8. Capacitance Characteristics. 1 5 1m 0.5 RD S(O L N) IM 10 0m s IT s 1s 0.1 10 s 0.05 1 2 3 2 DC VGS = -2.7V SINGLE PULSE RθJA = 357 °C/W TA = 25°C 0.02 SINGLE PULSE R θJA =357° C/W TA = 25°C 4 POWER (W) 0.2 1 0 0.001 5 10 15 20 30 0.01 40 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID , DRAIN CURRENT (A) 1 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.01 0.3 Crss 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 0.005 R θJA (t) = r(t) * R θJA R θJA = 357 °C/W 0.05 P(pk) 0.02 0.01 t1 Single Pulse TJ - T = P * R JA (t) θ Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 0.001 0.01 0.1 t1 , TIME (sec) 1 10 A 100 300 Figure 11. Transient Thermal Response Curve. FDV302P REV. F