FAIRCHILD BSS138

May 1995
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance. These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
Rugged and Relaible
Compact industry standard SOT-23 surface mount
package.
_______________________________________________________________________________
D
S
G
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
Parameter
BSS138
Units
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 20KΩ)
50
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
- Non Repetitive (TP < 50 µS)
± 40
ID
Drain Current - Continuous
0.22
PD
Maximum Power Dissipation
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
350
°C/W
- Pulsed
Derate Above 25°C
A
0.88
0.36
W
2.8
mW/°C
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction to Ambient
© 1997 Fairchild Semiconductor Corporation
BSS138 Rev. A1
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
50
V
TJ =125°C
0.5
µA
5
µA
VDS = 30 V, VGS = 0 V
100
nA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1.3
1.6
V
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 0.22 A
0.81
3.5
Ω
VGS = 4.5 V, ID = 0.22 A
1.16
6
gFS
Forward Transconductance
VDS = 10 V, ID = 0.22 A
0.8
0.12
0.45
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
30
60
pF
15
25
pF
7.5
10
pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
tf
VDD = 30 V, ID = 0.29 A,
VGS = 10 V, RGEN = 50 Ω
8
ns
12
ns
Turn - Off Delay Time
16
ns
Turn - Off Fall Time
22
ns
0.22
A
0.88
A
1.4
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
ISM
Maximum Pulse Source Current (Note 1)
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.44 A
0.8
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
BSS138 Rev. A1
Typical Electrical Characteristics
2.5
VGS = 10V
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
3
2.5
6.0
2
5.0
4.5
1.5
4.0
1
3.5
3.0
0.5
0
2.5
0
1
2
3
4
VDS , DRAIN-SOURCE VOLTAGE (V)
4.0
4.5
1.5
5.0
6.0
1
10
0.5
1
I D , DRAIN CURRENT (A)
1.5
2
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2.5
I D = 220mA
1.8
V GS = 10V
R DS(on) , NORMALIZED
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
= 3.0V
3.5
0
2
V th , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE (V)
0.5
T = 25°C
J
125°C
0.4
0.3
0.2
0.1
1
1.5
2
2.5
3
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.5
25°C
1
-55°C
0
5
10
15
20
I D , DRAIN CURRENT (A)
25
30
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
0.6
VDS = 10V
V GS = 10V
TJ = 125°C
0.5
150
Figure 3. On-Resistance Variation
with Temperature.
I D , DRAIN CURRENT (A)
GS
2
5
Figure 1. On-Region Characteristics.
0
0.5
V
3.5
4
1.2
VDS = V GS
I D = 250µA
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. Gate Threshold Variation with
Temperature.
BSS138 Rev. A1
1.12
1.1
1
ID = 250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
-50
-25
V GS = 0V
I S , REVERSE DRAIN CURRENT (A)
BVDSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
Typical Electrical Characteristics (continued)
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
0.1
25°C
0.01
0.001
0.2
Figure 7. Breakdown Voltage Variation with
Temperature.
VGS , GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C iss
C oss
20
C rss
f = 1 MHz
VGS = 0V
0.2
0.5
1
2
5
10
20
V DS , DRAIN TO SOURCE VOLTAGE (V)
50
Figure 9. Capacitance Characteristics.
V
I D = 220mA
DS
6
4
2
0
0
0.2
0.4
0.6
0.8
1
Q g , GATE CHARGE (nC)
1.2
1.4
Figure 10. Gate Charge Characteristics.
t on
t d (o n )
t off
tr
RL
V IN
= 8.0V
8
VDD
t d(off)
tf
90%
90%
V OUT
D
VGS
1.2
10
50
5
0.1
0.4
0.6
0.8
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
100
10
TJ = 125°C
VO U T
R GEN
10%
10%
DUT
G
INVERTED
90%
S
V IN
50%
50%
10%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
BSS138 Rev. A1
2
0.8
1
TJ = 25°C
0.5
0.6
I D , DRAIN CURRENT (A)
g FS, TRANSCONDUCTANCE (SIEMENS)
Typical Electrical Characteristics (continued)
125°C
0.4
0.2
VDS = 10V
0
R
(
DS
)
ON
Lim
10
it
1m
10
0.2
10
0.1
0m
0u
s
s
ms
s
1s
10
s
DC
0.05
VGS = 20V
SINGLE PULSE
TA = 25°C
0.01
0.005
0
0.3
0.6
0.9
ID , DRAIN CURRENT (A)
1.2
1.5
1
5
V
DS
Figure 13. Transconductance Variation with Drain
Current and Temperature.
10
20
50
100
, DRAIN-SOURCE VOLTAGE (V)
Figure 14. Maximum Safe Operating Area
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.05
R θJA (t) = r(t) * R θJA
o
R
= 350 C/W
θJA
0.1
0.05
0.02
P(pk)
0.01
t1
0.01
t2
Single Pulse
TJ - T A = P * R θJA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
300
Figure 15. Transient Thermal Response Curve
BSS138 Rev. A1