FAIRCHILD NDB6030PL

June 1997
NDP6030PL / NDB6030PL
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V
RDS(ON) = 0.025 Ω @ VGS= -10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
Parameter
NDP6030PL
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage - Continuous
±16
V
ID
Drain Current
- Continuous
-30
A
- Pulsed
-90
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
TJ,TSTG
Operating and Storage Temperature Range
NDB6030PL
75
Units
W
0.5
-65 to 175
°C
275
°C
-65 to 175
°C
2
°C/W
62.5
°C/W
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
NDP6030PL Rev.B1
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-30
V
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = -250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
VGS = 16 V, VDS = 0 V
IGSSR
Gate - Body Leakage, Reverse
VGS = -16 V, VDS = 0 V
-100
nA
o
TJ = 125°C
ON CHARACTERISTICS
-250
µA
1
mA
-100
nA
(Note)
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp.Coefficient
ID = -250 µA, Referenced to 25 o C
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID= -250 µA
TJ = 125°C
RDS(ON)
mV/oC
-36
Static Drain-Source On-Resistance
mV/oC
2.2
-1
-1.4
-2
-0.8
-1.08
-1.6
0.037
0.042
0.053
0.075
0.021
0.025
VGS = -4.5 V, ID = -15 A
TJ = 125°C
VGS = -10 V, ID = -19 A
-20
V
Ω
ID(on)
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
A
gFS
Forward Transconductance
VDS = -4.5 V, ID = -19 A
20
S
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
1570
pF
975
pF
360
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note)
tD(on)
Turn - On Delay Time
12.5
25
nS
tr
Turn - On Rise Time
60
120
nS
tD(off)
Turn - Off Delay Time
50
100
nS
tf
Turn - Off Fall Time
52
100
nS
Qg
Total Gate Charge
26
36
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -15 V, ID = -5 A,
VGS = -5 V, RGEN = 6 Ω
VDS= -12 V
ID = -30 A , VGS = -5 V
6.5
nC
11.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -15 A
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = -30 A
dIF/dt = 100 A/µs
(Note)
-0.92
-30
A
-100
A
-1.3
V
58
ns
-1.5
A
Note:
Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6030PL Rev.B1
V GS = -10V -7.0
1.6
-6.0
R DS(ON) , NORMALIZED
60
-5.0
-4.5
40
-4.0
-3.5
20
-3.0
0
DRAIN-SOURCE ON-RESISTANCE
-I D , DRAIN-SOURCE CURRENT (A)
Typical Electrical Characteristics
V GS= -3.5 V
1.4
-4.0
-4.5
1.2
-5.0
1
-5.5
-6.0
0.8
-7.0
-10
0.6
0.4
0
1
2
3
4
0
5
10
20
T = 25°C
I D = -15A
60
V GS = -4.5V
1.4
1.2
1
0.8
-25
ID = -15A
A
R DS(ON) , ON-RESISTANCE
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE (OHMS)
50
0.12
1.8
0.6
-50
40
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.6
30
-I D , DRAIN CURRENT (A)
-VDS , DRAIN-SOURCE VOLTAGE (V)
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
150
0.1
125 °C
0.08
0.06
0.04
0.02
175
0
J
2
4
6
8
10
-VGS ,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
T = -55°C
A
-ID , DRAIN CURRENT (A)
VDS = -5V
-IS , REVERSE DRAIN CURRENT (A)
30
25°C
25
125°C
20
15
10
5
0
1
2
-V
GS
3
4
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
60
10
VGS = 0V
TJ = 125°C
1
25°C
0.1
-55°C
0.01
0.0001
0.2
0.4
-V
SD
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
NDP6030PL Rev.B1
Typical Electrical Characteristics (continued)
5000
I D = -30A
3000
VDS = -6V
-12V
-24V
8
CAPACITANCE (pF)
-V GS , GATE-SOURCE VOLTAGE (V)
10
6
4
2000
Ciss
Coss
1000
500
2
0
150
0.1
0
10
20
30
40
Crss
f = 1 MHz
VGS = 0 V
300
0.3
1
2
5
10
20
30
-VDS , DRAIN TO SOURCE VOLTAGE (V)
50
Q g , GATE CHARGE (nC)
Figure 8.Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
150
N)
S(O
RD
50
VGS = -4.5V
SINGLE PULSE
R θJC = 2.0 °C/W
TC = 25°C
4000
3000
2000
1000
0
0.001
1
1
SINGLE PULSE
R θJC =2° C/W
TC = 25°C
5000
10m
s
100
ms
DC
10
2
6000
1m
s
30
5
7000
10µ
s
10
0µ
s
IT
LIM
POWER (W)
-ID , DRAIN CURRENT (A)
100
2
5
10
20
30
50
0.01
TRANSIENT THERMAL RESISTANCE
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
0.1
1
10
100
1,000
SINGLE PULSE TIME (mS)
- V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.3
D = 0.5
R θJC (t) = r(t) * RθJC
R θJC = 2.0 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.03
t1
0.02
0.01
0.02
Single Pulse
0.01
0.01
0.05
t2
TJ - TC = P * RθJC (t)
Duty Cycle, D = t1 /t2
0.1
0.5
1
5
t 1 ,TIME (ms)
10
50
100
500
1000
Figure 11. Transient Thermal Response Curve.
NDP6030PL Rev.B1