Order this document by MJE1123/D SEMICONDUCTOR TECHNICAL DATA PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main features: • High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current • Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts • Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.) Rating Collector–Emitter Sustaining Voltage Symbol Value Unit VCEO 40 Vdc Collector–Base Voltage VCB 50 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Collector Current — Peak IC ICM 4.0 8.0 Adc Base Current — Continuous IB 4.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 75 0.6 Watts W/°C TJ, Tstg – 65 to +150 °C RθJC RθJA °1.67° °70° °C/W TL 275 °C Operating and Storage Temperature THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case° Thermal Resistance — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 seconds CASE 221A–06 TO–220AB ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted) Symbol Min Typ Max Unit VCEO(sus) 40 65 — Vdc Emitter–Base Voltage (IE = 100 µA) VEBO 7.0 11 — Vdc Collector Cutoff Current (VCE = 7.0 Vdc, IB = 0) (VCE = 20 Vdc, IB = 0) ICEO — — — — 100 250 — — — — — — 0.16 0.13 0.10 0.25 0.20 0.45 0.30 0.25 0.20 0.40 0.35 0.75 Characteristic OFF CHARACTERISTICS* Collector–Emitter Sustaining Voltage (IC = 1.0 mA, I = 0) µAdc ON CHARACTERISTICS* Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 20 mAdc) (IC = 1.0 Adc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 120 mAdc) (IC = 2.0 Adc, IB = 50 mAdc) (IC = 2.0 Adc, IB = 120 mAdc) (IC = 4.0 Adc, IB = 120 mAdc) * Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data VCE(sat) Vdc (continued) 1 MJE1123 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C Unless Otherwise Noted) Characteristic Symbol Min Typ Max — — — 0.77 0.87 1.00 0.95 1.20 1.40 100 100 75 80 45 45 170 180 120 140 75 79 225 225 170 180 100 100 — — — 0.75 0.84 0.90 0.90 1.00 1.20 5.0 11.5 — Unit ON CHARACTERISTICS* (continued) Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 20 mAdc) (IC = 2.0 Adc, IB = 50 mAdc) (IC = 4.0 Adc, IB = 120 mAdc) VBE(sat) DC Current Gain (IC = 1.0 Adc, VCE = 7.0 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) (IC = 2.0 Adc, VCE = 7.0 Vdc) (IC = 2.0 Adc, VCE = 10 Vdc) (IC = 4.0 Adc, VCE = 7.0 Vdc) (IC = 4.0 Adc, VCE = 10 Vdc) hFE Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc) VBE(on) Vdc — Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) * Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. fT 1 50 mA 10 100 mA 1 120 mA 0.1 0.1 VBE(sat) , BASE–EMITTER SATURATION VOLTAGE (VOLTS) 0.6 IC = 4 A, IB = 100 mA 0.4 IC = 2 A, IB = 50 mA 0.2 IC = 1 A, IB = 20 mA 10 20 40 60 80 IC, COLLECTOR CURRENT (AMPS) TJ, CASE TEMPERATURE (°C) Figure 1. Saturation Voltage versus Collector Current as a Function of Base Drive Figure 2. Saturation Voltage versus Temperature IC = 4 A, IB = 100 mA 50 mA 120 mA 0.7 0.6 0.5 TJ = 25°C 1 100 1.1 IB = 20 mA 1 0.9 0.8 0.2 0.1 0 0.1 0.8 0 1 1.2 1.1 2 VCE(sat), COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) IB = 20 mA TJ = 25°C VBE(S), BASE–EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) 100 0.4 0.3 MHz 10 1 0.9 IC = 2 A, IB = 50 mA 0.8 0.7 IC = 1 A, IB = 20 mA 0.6 20 40 60 80 IC, COLLECTOR CURRENT (AMPS) TJ, CASE TEMPERATURE (°C) Figure 3. Base–Emitter Saturation Voltage Figure 4. Base–Emitter Saturation Voltage versus Temperature Motorola Bipolar Power Transistor Device Data 100 MJE1123 1000 GAIN CHANGE RELATIVE TO 25°C (%) 40 DC CURRENT GAIN TJ = 25°C 100 VCE = 2 V 7V 10 V 10 0.1 1 10 VCE = 2, 7, or 10 V 30 20 TJ = 100°C 10 50°C 0 0.1 100 1 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain Figure 6. DC Current Gain Variation TYPICAL LOW PASS TRANSISTOR APPLICATION 0.4 600 Ω 5.6 V 10 µF* MJE1123 20 Ω *REQUIRED IF DEVICE IS *MORE THAN 6″ FROM MAIN *FILTER CAPACITOR. 5V OUTPUT DRIVE LT1123 FB GND 10 µF# #REQUIRED FOR STABILITY #(LARGER VALUES INCREASE #STABILITY). 100 IC, COLLECTOR CURRENT (AMPS) TYPICAL REGULATOR DROPOUT VOLTAGE (VOLTS) The MJE1123 was designed to operate as a low pass transistor in conjunction with the LT1123 offered by Linear Technology Corporation. Together they provide several excellent advantages: — A dropout voltage below 50 mV at 1.0 amp, increasing to only 225 mV at 4.0 amps, typically. — Line and load regulation are within 5.0 mV. — Initial output accuracy is better than 1 percent. — Full short circuit protection is included. — Base drive loss is less than 2% of output current . . . even at 4.0 full amps output. — The high gain and excellent collector–emitter saturation voltage make the combination better than monolithic devices. 0.3 0.2 0.1 0 0 1 2 3 4 5 TJ = 150°C 10 1 ms 5 ms DC 1 0.1 1 10 REGULATOR CIRCUIT OUTPUT CURRENT (AMPS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 7. Typical Dropout Voltage of a MJE1123 and LT1123 Circuit Figure 8. Maximum Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 100 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE1123 1 D = 0.5 0.5 0.3 D = 0.2 0.2 D = 0.1 0.1 0.05 0.03 0.02 t1 D = 0.02 t2 DUTY CYCLE, D = t1/t2 D = 0.01 0.01 0.01 SINGLE PULSE 0.02 RθJC(t) = r(t) RθJC RθJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) P(pk) D = 0.05 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 t, TIME (ms) Figure 9. Typical Thermal Response 4 Motorola Bipolar Power Transistor Device Data 1K MJE1123 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 MJE1123 Motorola reserves the right to make changes without further notice to any products herein. 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