MOTOROLA MJ1302A

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by MJ3281A/D
SEMICONDUCTOR TECHNICAL DATA
 " ! *Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
250 WATTS
The MJ3281A and MJ1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
• Designed for 100 W Audio Frequency
• Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area — 1 A/100 V @ 1 sec
• High fT — 30 MHz Typical
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
200
Vdc
Collector–Base Voltage
VCBO
200
Vdc
Emitter–Base Voltage
VEBO
7
Vdc
Collector–Emitter Voltage — 1.5 V
VCEX
200
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
15
25
Adc
Base Current — Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
250
1.43
Watts
W/°C
TJ, Tstg
– 65 to + 200
°C
Symbol
Max
Unit
RθJC
0.7
°C/W
Rating
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
200
—
—
Vdc
Emitter–Base Voltage
(IE = 100 µAdc, IC = 0)
VEBO
7
—
—
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
—
50
µAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
—
5
µAdc
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
IEBO
—
—
25
µAdc
4
1
—
—
—
—
60
60
60
60
60
45
12
125
—
—
—
115
—
35
175
175
175
175
175
—
—
VCE(sat)
—
—
3
Vdc
fT
—
30
—
MHz
Cob
—
—
600
pF
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
hFE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
NPN MJ3281A
VCE = 10 V
10
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
1
0
1
2
3
4
5
6
7
8
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP MJ1302A
100
100
VCE = 10 V
10
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
1
0
1
2
3
5
6
7
8
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Current–Gain — Bandwidth Product
PNP MJ1302A
NPN MJ3281A
1000
100
hFE, DC CURRENT GAIN
1000
hFE, DC CURRENT GAIN
4
IC, COLLECTOR CURRENT (AMPS)
VCE = 20 V
VCE = 20 V
100
VCE = 5 V
VCE = 5 V
10
0.1
1
10
10
0.1
100
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
Figure 4. DC Current Gain
PNP MJ1302A
NPN MJ3281A
1000
1000
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 5 V
25°C
100°C
100
10
0.1
100
– 25°C
1
10
100
25°C
100°C
100
10
0.1
– 25°C
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
Motorola Bipolar Power Transistor Device Data
100
3
TYPICAL CHARACTERISTICS
PNP MJ1302A
NPN MJ3281A
VBE(on), BASE-EMITTER VOLTAGE (VOLTS)
VBE(on), BASE-EMITTER VOLTAGE (VOLTS)
1.8
TJ = 25°C
1.6
1.4
1.2
1
10
11
12
13
14
15
16
17
18
19
3.2
2.4
2
1.6
1.2
0.8
0.4
0
20
TJ = 25°C
2.8
0
2
4
6
14
16
18
Figure 8. Typical Base–Emitter Voltage
20
NPN MJ3281A
20
IB = 1 A
0.6 A
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
12
Figure 7. Typical Base–Emitter Voltage
TJ = 25°C
0.4 A
0.8 A
16
10
IC, COLLECTOR CURRENT (AMPS)
PNP MJ1302A
20
8
IC, COLLECTOR CURRENT (AMPS)
0.2 A
12
8
4
IB = 1 A
0.4 A
0.6 A
0.8 A
16
0.2 A
12
8
4
TJ = 25°C
0
0
1
2
3
4
5
6
7
8
9
10
0
0
1
2
3
4
5
6
7
8
9
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Typical Output Characteristics
Figure 10. Typical Output Characteristics
10
IC, COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by second breakdown.
10
1
250 ms
1s
0.1
1
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Forward Bias Safe Operating Area (FBSOA)
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
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6
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Motorola Bipolar Power Transistor Device Data
*MJ3281A/D*
MJ3281A/D