Order this document by MJ21193/D SEMICONDUCTOR TECHNICAL DATA The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *Motorola Preferred Device 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 2.5 A, 80 V, 1 Second CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 16 30 Adc Base Current — Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 250 1.43 Watts W/°C TJ, Tstg – 65 to +200 °C Symbol Max Unit RθJC 0.7 °C/W Operating and Storage Junction Temperature Range āā THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 — — Vdc ICEO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%. (continued) Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typical Max Unit Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO — — 100 µAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX — — 100 µAdc 5 2.5 — — — — 25 8 — — — — 2.2 — — — — 1.4 4 Characteristic OFF CHARACTERISTICS SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 80 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE 75 Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD % hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2% — 0.8 — — 0.08 — fT 4 — — MHz Cob — — 500 pF NPN MJ21194 6.5 6.0 VCE = 10 V 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product 2 10 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJ21193 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 TJ = 25°C ftest = 1 MHz 1.0 0 0.1 1.0 IC COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Motorola Bipolar Power Transistor Device Data 10 TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 – 25°C TJ = 100°C 25°C 100 – 25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJ21193 NPN MJ21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 – 25°C TJ = 100°C 25°C 100 – 25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJ21193 NPN MJ21194 35 30 25 20 IB = 2 A IB = 2 A 30 I C, COLLECTOR CURRENT (A) 1.5 A I C, COLLECTOR CURRENT (A) 100 Figure 3. DC Current Gain, VCE = 20 V 1000 1A 15 0.5 A 10 5.0 1.5 A 25 1A 20 15 0.5 A 10 5.0 TJ = 25°C 0 1.0 10 IC COLLECTOR CURRENT (AMPS) TJ = 25°C 0 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 25 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 25 Figure 8. Typical Output Characteristics 3 TYPICAL CHARACTERISTICS PNP MJ21193 NPN MJ21194 1.4 2.5 TJ = 25°C 2.0 IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 1.5 VBE(sat) 1.0 0.5 1.2 TJ = 25°C 1.0 IC/IB = 10 0.8 0.6 0.4 0.2 VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) VCE(sat) 0 0.1 100 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 10. Typical Saturation Voltages PNP MJ21193 NPN MJ21194 10 10 VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) VBE(sat) TJ = 25°C 1.0 VCE = 20 V (SOLID) 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base–Emitter Voltage TJ = 25°C VCE = 20 V (SOLID) 1.0 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 12. Typical Base–Emitter Voltage IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1 SEC 10 TC = 25°C 1.0 0.1 1.0 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data 10000 10000 Cib 1000 TJ = 25°C C, CAPACITANCE (pF) C, CAPACITANCE (pF) TJ = 25°C Cob Cib 1000 Cob f(test) = 1 MHz 100 0.1 f(test) = 1 MHz 1.0 10 100 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance 100 1.2 T , TOTAL HARMONIC HD DISTORTION (%) 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 Ω DUT 0.5 Ω 0.5 Ω 8.0 Ω DUT –50 V Figure 17. Total Harmonic Distortion Test Circuit Motorola Bipolar Power Transistor Device Data 5 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJ21193/D* MJ21193/D