Order this document by MJL3281A/D SEMICONDUCTOR TECHNICAL DATA " ! *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area — 1 A/100 V @ 1 Second • High fT — 30 MHz Typical CASE 340G–02, STYLE 2 TO–264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 7 Vdc Collector–Emitter Voltage – 1.5 V VCEX 200 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 15 25 Adc Base Current — Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.7 °C/W Min Typ Max Unit 200 — — 7 — — Rating Operating and Storage Junction Temperature Range āā THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Emitter–Base Voltage (IE = 100 mAdc, IC = 0) VCEO(sus) Vdc VEBO (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. Vdc (continued) Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max — — 50 — — 5 — — 25 4 1 — — — — 60 60 60 60 60 45 12 125 — — — 115 — 35 175 175 175 175 175 — — — — 3 — 30 — — — 600 Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Emitter Cutoff Current (VEB = 7 Vdc, IC = 0) IEBO µAdc µAdc µAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 100 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob pF PNP MJL1302A NPN MJL3281A 60 f T, CURRENT BANDWIDTH PRODUCT (MHz) f T, CURRENT BANDWIDTH PRODUCT (MHz) 50 VCE = 10 V 40 5V 30 20 10 TJ = 25°C ftest = 1 MHz 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product 2 10 VCE = 10 V 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Motorola Bipolar Power Transistor Device Data 10 TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A 1000 TJ = 100°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 25°C 100 – 25°C 25°C TJ = 100°C 100 – 25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJL1302A NPN MJL3281A 1000 h FE , DC CURRENT GAIN 1000 h FE , DC CURRENT GAIN 1.0 10 IC, COLLECTOR CURRENT (AMPS) TJ = 100°C 25°C 100 – 25°C 25°C TJ = 100°C 100 – 25°C VCE = 5 V VCE = 5 V 10 10 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJL1302A NPN MJL3281A 45 45 40 40 1.5 A 1.5 A IB = 2 A IC, COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 0.1 35 30 1A 25 0.5 A 20 15 10 35 1A 30 0.5 A 25 20 15 10 5.0 TJ = 25°C 5.0 IB = 2 A TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 25 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 25 Figure 8. Typical Output Characteristics 3 TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A 2.5 TJ = 25°C IC/IB = 10 2.5 2.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 VBE(sat) 1.5 1.0 0.5 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages NPN MJL3281A TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base–Emitter Voltage VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) PNP MJL1302A 10 0.1 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 12. Typical Base–Emitter Voltage IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 50 ms 1 sec 1.0 250 ms TJ = 25°C 0.1 1.0 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data TYPICAL CHARACTERISTICS PNP MJL1302A 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 NPN MJL3281A Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL1302A Typical Capacitance Figure 15. MJL3281A Typical Capacitance Motorola Bipolar Power Transistor Device Data 100 5 PACKAGE DIMENSIONS 0.25 (0.010) M T B M –Q– –B– –T– C E U N A 1 R 2 L 3 –Y– P K W F 2 PL G J H D 3 PL 0.25 (0.010) M Y Q S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 340G–02 ISSUE F Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 6 ◊ Motorola Bipolar Power Transistor Device Data MJL3281A/D