MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc IC 200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W Collector Current – Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 RJA 1 2 PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg –55 to +150 °C 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT–23 CASE 318 STYLE 6 MARKING DIAGRAMS M1J X 1JA X MMBT2369LT1 MMBT2369ALT1 M1J, 1JA = Specific Device Code X = Date Code ORDERING INFORMATION Device Package Shipping MMBT2369LT1 SOT–23 3000/Tape & Reel MMBT2369ALT1 SOT–23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 May, 2002 – Rev. 3 1 Publication Order Number: MMBT2369LT1/D MMBT2369LT1, MMBT2369ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 15 – – 40 – – 40 – – 4.5 – – – – – – 0.4 30 – – 0.4 40 – 40 20 30 20 20 – – – – – – – 120 120 – – – – – – – – – – – – – – – 0.25 0.20 0.30 0.25 0.50 0.7 – – – – – – – 0.85 1.02 1.15 1.60 – – 4.0 5.0 – – – 5.0 13 – 8.0 12 – 10 18 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector–Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) V(BR)CES Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Vdc Vdc Vdc Vdc µAdc ICBO Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) µAdc ICES MMBT2369A ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A hFE Collector–Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A Base–Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369A MMBT2369A MMBT2369A MMBT2369A – VCE(sat) Vdc VBE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Small Signal CurrentGain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) pF hfe – SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn–On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 ns ns ns MMBT2369LT1, MMBT2369ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 t1 +10.6 V 0 -1.5 V 3V < 1 ns 270 Ω 3.3 k 270 Ω t1 +10.75 V 0 -9.15 V Cs* < 4 pF 3.3 k < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Cs* < 4 pF *Total shunt capacitance of test jig and connectors. Figure 1. ton Circuit – 10 mA t1 +10.8 V -2 V 10 V Figure 3. toff Circuit – 10 mA 95 Ω 1k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 95 Ω 10 V 0 -8.6 V 0 < 1 ns t1 +11.4 V 1k < 1 ns Cs* < 12 pF 1N916 PULSE WIDTH (t1) BETWEEN 10 AND 500 µs DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 2. ton Circuit – 100 mA Figure 4. toff Circuit – 100 mA TO OSCILLOSCOPE INPUT IMPEDANCE = 50 Ω RISE TIME = 1 ns TURN-ON WAVEFORMS Vin 0 220 Ω 10% Vout ton 90% 0.1 µF Vout 3.3 kΩ Vin 50 Ω PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 Ω PW ≥ 300 ns DUTY CYCLE < 2% 3.3 k 0.0023 µF 0.005 µF 0.0023 µF 0.005 µF 0.1 µF 0.1 µF VBB +- TURN-OFF WAVEFORMS 0 50 Ω 10% Vin 90% Vout +V =3V - CC VBB = +12 V Vin = -15 V toff Figure 5. Turn–On and Turn–Off Time Test Circuit 6 TJ = 25°C 5 100 LIMIT TYPICAL 50 Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 βF = 10 VCC = 10 V VOB = 2 V tf tr VCC = 10 V 10 5 2 10 tr (VCC = 3 V) 20 ts 1 Figure 6. Junction Capacitance Variations 2 5 10 20 IC, COLLECTOR CURRENT (mA) td 50 Figure 7. Typical Switching Times http://onsemi.com 3 100 MMBT2369LT1, MMBT2369ALT1 500 200 CHARGE (pC) QT, βF = 10 VCC = 10 V 25°C 100°C QT, βF = 40 t1 +5 V 100 ∆V 0 50 < 1 ns PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% QA, VCC = 10 V QA, VCC = 3 V 20 10 3V 10 pF MAX 2 1 VALUES REFER TO IC = 10 mA TEST 270 Cs* < 4 pF 4.3 k Figure 9. QT Test Circuit 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 8. Maximum Charge Data C < COPT C C=0 10 V 980 0 -4 V COPT 500 < 1 ns Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 10. Turn–Off Waveform VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) t1 +6 V Figure 11. Storage Time Equivalent Test Circuit 1.0 0.8 TJ = 25°C IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 Figure 12. Maximum Collector Saturation Voltage Characteristics http://onsemi.com 4 10 20 MMBT2369LT1, MMBT2369ALT1 hFE , MINIMUM DC CURRENT GAIN 200 TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C -15°C 50 -55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 13. Minimum Current Gain Characteristics 1.0 βF = 10 TJ = 25°C 1.2 0.5 MAX VBE(sat) 1.0 COEFFICIENT (mV/ °C) V(sat) , SATURATION VOLTAGE (VOLTS) 1.4 MIN VBE(sat) 0.8 0.6 0.4 0.2 MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 0 APPROXIMATE DEVIATION FROM NOMINAL -0.5 -1.0 θVC -55°C to +25°C ±0.15 mV/°C 25°C to 125°C ±0.15 mV/°C θVB ±0.4 mV/°C ±0.3 mV/°C -2.5 100 (-55°C to +25°C) (-55°C to +25°C) (25°C to 125°C) -1.5 θVB for VBE(sat) -2.0 50 (25°C to 125°C) θVC for VCE(sat) 0 Figure 14. Saturation Voltage Limits 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 Figure 15. Typical Temperature Coefficients http://onsemi.com 5 100 MMBT2369LT1, MMBT2369ALT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–23 is a function of the The melting temperature of solder is higher than the rated pad size. This can vary from the minimum pad size for temperature of the device. When the entire device is heated soldering to a pad size given for maximum power to a high temperature, failure to complete soldering within dissipation. Power dissipation for a surface mount device is a short time could result in device failure. Therefore, the determined by TJ(max), the maximum rated junction following items should always be observed in order to temperature of the die, RθJA, the thermal resistance from the minimize the thermal stress to which the devices are device junction to ambient, and the operating temperature, subjected. TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: • Always preheat the device. • The delta temperature between the preheat and soldering TJ(max) – TA PD = should be 100°C or less.* RθJA • When preheating and soldering, the temperature of the The values for the equation are found in the maximum leads and the case must not exceed the maximum ratings table on the data sheet. Substituting these values into temperature ratings as shown on the data sheet. When the equation for an ambient temperature TA of 25°C, one can using infrared heating with the reflow soldering method, calculate the power dissipation of the device which in this the difference shall be a maximum of 10°C. case is 225 milliwatts. • The soldering temperature and time shall not exceed 150°C – 25°C 260°C for more than 10 seconds. PD = = 225 milliwatts 556°C/W • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit • After soldering has been completed, the device should be board to achieve a power dissipation of 225 milliwatts. allowed to cool naturally for at least three minutes. There are other alternatives to achieving higher power Gradual cooling should be used as the use of forced dissipation from the SOT–23 package. Another alternative cooling will increase the temperature gradient and result would be to use a ceramic substrate or an aluminum core in latent failure due to mechanical stress. board such as Thermal Clad. Using a board material such • Mechanical stress or shock should not be applied during as Thermal Clad, an aluminum core board, the power cooling. dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 6 MMBT2369LT1, MMBT2369ALT1 PACKAGE DIMENSIONS SOT–23 (TO–236) CASE 318–08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. A L 3 1 V B S 2 G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT2369LT1, MMBT2369ALT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MMBT2369LT1/D