ETC AO3410

August 2002
AO3410
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3410 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V and as
high as 12V. This device is suitable for use as a load
switch or in PWM applications.
VDS (V) = 30V
ID = 5.8 A
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 33mΩ (VGS = 4.5V)
RDS(ON) < 52mΩ (VGS = 2.5V)
RDS(ON) < 70mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
30
1.4
W
1
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
4.9
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
5.8
TA=25°C
Power Dissipation A
Maximum
30
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
AO3410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VGS(th)
ID(ON)
Conditions
Min
ID=250µA, VGS=0V
VDS=24V, VGS=0V
30
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
0.5
gFS
VSD
IS
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=3A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
Units
V
µA
0.8
100
1
nA
V
23
29
26
28
39
33
mΩ
35
54
42
72
mΩ
mΩ
1
2.5
S
V
A
30
TJ=125°C
Static Drain-Source On-Resistance
Max
1
5
TJ=55°C
VGS=10V, ID=5.8A
RDS(ON)
Typ
12
A
17
0.66
mΩ
767
pF
111
82
1.3
pF
pF
Ω
10
nC
1.2
3.1
5
5.5
39
4.7
nC
nC
ns
ns
ns
ns
IF=5A, dI/dt=100A/µs
15
IF=5A, dI/dt=100A/µs
7.1
ns
nC
VGS=4.5V, VDS=15V, ID=5.8A
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=6Ω
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.