Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS (V) = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 (VGS = -10V) 0-0.1 130 m +0.1 0.38-0.1 RDS(ON) 0.55 ID =-2.6 A (VGS=-10V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS Continuous Drain Current *1 TA=25 ID A -2.2 TA=70 Pulsed Drain Current *2 Power Dissipation *1 V 12 -2.6 -20 IDM TA=25 1.4 PD W 1 TA=70 Junction and Storage Temperature Range TJ, TSTG -55 to 150 2 *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Symbol t 10s Maximum Junction-to-Ambient *1 Steady-State Maximum Junction-to-Lead *2 Steady-State RèJA RèJL Typ Max Unit 70 90 /W 100 125 /W 63 80 /W *1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 Transistors IC SMD Type KO3403 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Testconditons Min VDS=-24V, VGS=0V ,TJ=55 -5 100 VDS=0V, VGS= 12V VDS=VGS ID=-250 A -0.6 On state drain current ID(ON) VGS=-4.5V, VDS=-5V -10 -1 A 130 VGS=-10V, ID=-2.6A 200 VGS=-4.5V, ID=-2A 128 180 m VGS=-2.5V, ID=-1A 187 260 m gFS VDS=5V, ID=-2.5A IS=-1A,VGS=0V TJ=125 3 4.5 -0.85 IS Ciss Input Capacitance Crss Output Capacitance Rg Total Gate Charge Qg Gate Source Charge Qgs V 154 VSD Coss nA 102 Forward Transconductance Gate resistance -1.4 A VGS=-10V, ID=-2.6A Diode Forward Voltage Reverse Transfer Capacitance Unit V -1 IGSS Maximum Body-Diode Continuous Current Max VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ -30 ID=-250 A, VGS=0V Gate Threshold Voltage Static Drain-Source On-Resistance 400 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.5A m S -1 V -2 A 500 pF 55 pF 42 pF 12 16 4.4 5.3 0.8 nC nC Gate Drain Charge Qgd 1.32 Turn-On Rise Time tD(on) 5.3 8 ns Turn-Off DelayTime tr 4.4 9 ns Turn-Off Fall Time tD(off) VGS=-10V, VDS=-15V, RL=6 ,RGEN=3 Turn-On DelayTime tf Body Diode Reverse Recovery Time trr IF=-2.5A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=-2.5A, dI/dt=100A/ Marking Marking 2 Symbol A3 www.kexin.com.cn nC 31.5 45 ns 8 16 ns s 15.8 19 ns s 8 12 nC