Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) 1 0.55 50m +0.1 1.3-0.1 RDS(ON) +0.1 2.4-0.1 ID = -4.2 A (VGS =- 10V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS Continuous Drain Current *1 TA=25 -4.2 ID A -3.5 TA=70 Pulsed Drain Current *2 Power Dissipation *1 V 12 IDM TA=25 -30 1.4 PD W 1 TA=70 TJ, TSTG Junction and Storage Temperature Range -55 to 150 2 *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Symbol t 10s Maximum Junction-to-Ambient *1 Steady-State Maximum Junction-to-Lead *2 Steady-State RèJA RèJL Typ Max Unit 65 90 /W 85 125 /W 43 60 /W *1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 Transistors IC SMD Type KO3401 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Testconditons Min Max -30 ID=250 A, VGS=0V VDS=-24V, VGS=0V -1 -5 IGSS VDS=0V, VGS= 12V 100 Gate Threshold Voltage VGS(th) VDS=VGS ID=-250 A -0.7 On state drain current ID(ON) VGS=-4.5V, VDS=-5V -25 VGS=-10V, ID=4.2A Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=4.2A gFS VDS=-5V, ID=-5A Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Pulsed Body-Diode Current * -1.3 42 50 7 A nA V A 75 VGS=-2.5V, ID=-1A Forward Transconductance -1 TJ=125 VGS=-4.5V, ID=-4A Unit V VDS=-24V, VGS=0V ,TJ=55 Gate-Body leakage current m 53 65 m 80 120 m 11 -1 V -2.2 A ISM -30 A Reverse Transfer Capacitance Ciss Coss Input Capacitance Crss Output Capacitance Rg Total Gate Charge Qg Gate Source Charge Qgs -0.75 S IS Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A 954 pF 115 pF 77 pF 6 9.4 nC 2 nC Gate Drain Charge Qgd 3 nC Turn-On Rise Time tD(on) 6.3 ns Turn-Off DelayTime tr 3.2 ns Turn-Off Fall Time tD(off) VGS=-10V, VDS=-15V, RL=3.6 ,RGEN=6 Turn-On DelayTime tf Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=-4A, dI/dt=100A/ * Repetitive rating, pulse width limited by junction temperature. Marking Marking 2 Typ A1 www.kexin.com.cn 38.2 ns 12 ns s 20.2 ns s 11.2 nC