KEXIN KO3401

Transistors
IC
SMD Type
P-Channel Enhancement Mode Field Effect Transistor
KO3401
SOT-23
Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
VDS (V) = -30V
0.4
3
(VGS = -10V)
RDS(ON)
65m
(VGS = -4.5V)
120m
2
+0.1
0.95-0.1
+0.1
1.9-0.1
(VGS = -2.5V)
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
RDS(ON)
1
0.55
50m
+0.1
1.3-0.1
RDS(ON)
+0.1
2.4-0.1
ID = -4.2 A (VGS =- 10V)
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
Continuous Drain
Current *1
TA=25
-4.2
ID
A
-3.5
TA=70
Pulsed Drain Current *2
Power Dissipation *1
V
12
IDM
TA=25
-30
1.4
PD
W
1
TA=70
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
2
*1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient*1
Symbol
t
10s
Maximum Junction-to-Ambient *1
Steady-State
Maximum Junction-to-Lead *2
Steady-State
RèJA
RèJL
Typ
Max
Unit
65
90
/W
85
125
/W
43
60
/W
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient.
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1
Transistors
IC
SMD Type
KO3401
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Testconditons
Min
Max
-30
ID=250 A, VGS=0V
VDS=-24V, VGS=0V
-1
-5
IGSS
VDS=0V, VGS= 12V
100
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250 A
-0.7
On state drain current
ID(ON)
VGS=-4.5V, VDS=-5V
-25
VGS=-10V, ID=4.2A
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=4.2A
gFS
VDS=-5V, ID=-5A
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current *
-1.3
42
50
7
A
nA
V
A
75
VGS=-2.5V, ID=-1A
Forward Transconductance
-1
TJ=125
VGS=-4.5V, ID=-4A
Unit
V
VDS=-24V, VGS=0V ,TJ=55
Gate-Body leakage current
m
53
65
m
80
120
m
11
-1
V
-2.2
A
ISM
-30
A
Reverse Transfer Capacitance
Ciss
Coss
Input Capacitance
Crss
Output Capacitance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
-0.75
S
IS
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-4A
954
pF
115
pF
77
pF
6
9.4
nC
2
nC
Gate Drain Charge
Qgd
3
nC
Turn-On Rise Time
tD(on)
6.3
ns
Turn-Off DelayTime
tr
3.2
ns
Turn-Off Fall Time
tD(off)
VGS=-10V, VDS=-15V, RL=3.6 ,RGEN=6
Turn-On DelayTime
tf
Body Diode Reverse Recovery Time
trr
IF=-4A, dI/dt=100A/
Body Diode Reverse Recovery Charge
Qrr
IF=-4A, dI/dt=100A/
* Repetitive rating, pulse width limited by junction temperature.
Marking
Marking
2
Typ
A1
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38.2
ns
12
ns
s
20.2
ns
s
11.2
nC