AON5810 Common-Drain Dual N-Channrl Enhancement Mode Field Effect Transistor General Description The AON5810 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain configuration. Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L is a Green Product ordering option. AON5810 and AON5810L are electrically identical. Features VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 DFN 2X5 S2 G2 S1 G1 D2 S2 S1 D1/D2 G1 G2 S1 S2 S2 G2 Top View G1 S1 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current RθJA=75°C/W TA=25°C Pulsed Drain Current B Maximum Junction-to-Case 1/4 B V 7.7 A 30 1.6 PDSM W 1.0 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Units 6.1 IDM A TA=25°C Power Dissipation RθJA=75°C/W TA=70°C Junction and Storage Temperature Range Maximum 20 ±12 ID TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A S2 S1 RθJA RθJC Typ 30 61 4.5 °C Max 40 75 6 Units °C/W °C/W °C/W www.freescale.net.cn AON5810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 µA 0.73 1 V 11 14 18 16 21 26 VGS=4.0V, ID=6A 11 14.5 19 VGS=3.1V, ID=6A 13 16.7 21 mΩ VGS=2.5V, ID=5A VGS=1.8V, ID=4A 15 20 25 mΩ 32 40 mΩ VDS=0V, VGS=±10V Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=4.5V, ID=7.7A TJ=125°C gFS Forward Transconductance VDS=5V, ID=7.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 10 Gate-Body leakage current Coss Units V 1 IGSS Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V BVGSO RDS(ON) Typ VGS=4.5V, VDS=10V, ID=7.7A 25 V A 28 0.5 0.74 mΩ mΩ S 1 V 2.5 A 1360 pF 200 pF 178 pF 1.5 Ω 13.1 nC 2 nC nC Qgd Gate Drain Charge 3.9 tD(on) Turn-On DelayTime 6.2 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω 40.5 ns 10 ns IF=7.7A, dI/dt=100A/µs 18.8 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/µs 8.1 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1: Sep. 2007 2/4 www.freescale.net.cn AON5810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V VDS=5V 25 15 4V 20 6V ID(A) ID (A) 2.5V 3V 15 10 125°C VGS=2V 0.5 10 1 5 5 25°C 0 0 0 1 2 3 4 0 5 0.5 50 1.5 2 2.5 1.8 30 Normalized On-Resistance VGS=1.8V 40 RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=2.5V 20 VGS=4.5V 10 VGS=10V VGS=2.5V ID=5A 1.6 VGS=4.5V ID=7.7A 1.4 1.2 VGS=10V ID=8A VGS=1.8V ID=4A 1 0 0 5 10 15 20 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 50 1.0E+00 40 1.0E-01 30 IS (A) RDS(ON) (mΩ ) ID=7.7A 125°C 1.0E-02 25°C 1.0E-03 20 25°C 10 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 125°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AON5810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2400 VDS=10V ID=7.7A A Ciss 1800 Capacitance (pF) VGS (Volts) 4 3 2 1200 0.5 1 600 1 Coss 0 0 3 6 9 12 Crss 0 15 0 5 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 15 200 10µs ID (Amps) 10.0 160 Power (W) RDS(ON) limited 100µs 1ms 10ms 100ms 1s 10s 1.0 DC TJ(Max)=150°C, T A=25°C 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 120 80 40 0 0.0001 0.1 0.1 TJ(Max)=150°C TA=25°C 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4/4 www.freescale.net.cn