MII 66005-001

66005
Mii
16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR
or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE
Features:
Applications:
•
•
•
•
•
•
•
•
High Reliability
Rugged package
Stability over wide temperature
+16kV electrical isolation
OPTOELECTRONIC PRODUCTS
DIVISION
Grid current modulator
Power Supply Feedback
Switching between power supplies
Patient station isolation
DESCRIPTION
In the 66005, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either
silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability,
hermetically sealed, ceramic package. Available in commercial (0° to +70°C), extended temperature range (-40° to +85°C)
and full Military temperature range (-55° to +125°C). Contact the factory for special custom or multi-channel
requirements!
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ...................... 35V
Emitter-Collector Voltage...................................................................................................................................................... 7V
Continuous Collector Current .......................................................................................................................................... 50mA
Continuous Transistor Power Dissipation ..................................................................(see Note 1) ............................. 250mW
Input to Output Isolation Voltage .......................................................................................................................................16kV
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature .................................................. 100mA
Reverse Input Voltage ......................................................................................................................................................... 2V
Continuous LED Power Dissipation ..........................................................................(see Note 1) .............................. 250mW
Storage Temperature...................................................................................................................................... -65°C to +150°C
Operating Free-Air Temperature Range ........................................................................................................ -55°C to +125°C
Lead Solder Temperature (1/16” from case for 10 seconds max.).................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 2.45 mW/°C.
Package Dimensions
Schematic Diagram
(1)
ANODE(+)
A
-X01
E
COLLECTOR (+)
Ø0.0175 [Ø0.44]
BASE
Ø0.1550 [Ø3.94]
Ø0.0175 [Ø0.44]
CATHODE(-)
EMITTER(-)
(2)
Ø0.3100 [Ø7.87]
16,000 V, BLACK DOT
(1)
RED DOT
2 LEADS
0.500 MIN [12.70]
C
B
K
A
-X02
C
(3)
(5)
(4)
(3)
3 LEADS
(2)
0.500 MIN [12.70]
0.8493 [21.57]
(5)
K
B
(4)
NOTE: BLACK DOT INDICATES ANODE FOR LED
RED DOT INDICATES COLLECTOR FOR
TRANSISTOR.
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] NOMINAL
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: [email protected]
7-5
66005
16kV HIGH VOLTAGE ISOLATER
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL
Input Diode Static Reverse Current
66005-X01
66005-X02
IR
Input Diode Static Forward Voltage
66005-X01
66005-X02
VF
Reverse Breakdown Voltage
66005-X01
66005-X02
BVR
Input Diode Capacitance
66005-X01
66005-X02
CIN
MIN
TYP
MAX
UNITS
TEST CONDITIONS
100
µA
VR = 2V
1.8
V
IF = 20mA
10
V
IR = 100µA
25
pF
V = 0V, f = 1MHz
UNITS
TEST CONDITIONS
V
IC = 1mA, IB = 0, IF = 0
75
300
nA
nA
VCE = 10V, IF = 0mA
MAX
UNITS
TEST CONDITIONS
%
VCE = 5V, IF = 10mA
V
IF = 50mA, IC = 1mA
1.15
2
OUTPUT TRANSISTOR
TA = 25°C unless otherwise specified.
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Dark Current
SYMBOL
MIN
V(BR)CEO
35
TYP
MAX
ICEO
COUPLED CHARACTERISTICS
TA = 25°C unless otherwise specified.
SYMBOL
MIN
Current Transfer Ratio
PARAMETER
66005-X01
66005-X02
CTR
15
300
Collector-Emitter Saturation Voltage
66005-X01
66005-X02
VCE(SAT)
DC Isolation Voltage
66005-X01
66005-X02
VISO
Rise Time
66005-X01
66005-X02
tr
66005-X01
66005-X02
tf
Fall Time
TYP
0.5
1.2
16
16
kV
15
25
µs
VCC = 5V, IF = 16mA, RL = 100Ω
15
25
µs
VCC = 5V, IF = 16mA, RL = 100Ω
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Current, High Level
IFH
16
50
mA
Supply Voltage
VCE
5
10
V
TA
-55
125
°C
Operating Temperature
SELECTION GUIDE
PART #
66005-001
66005-101
66005-011
66005-002
66005-102
66005-012
PART DESCRIPTION
Transistor output, military operating range (-55° to +125°C)
Transistor output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components)
Transistor output, commercial version Isolator (0° to 70°C)
Darlington output, military operating range (-55° to +125°C)
Darlington output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components)
Darlington output, commercial version Isolator (0° to 70°C)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: [email protected]
7-6