0.5 CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES 0.5 Typical On Resistance 0.8 Maximum On Resistance at 125°C 1.65 V to 3.6 V Operation Automotive Temperature Range: –40°C to +125°C High Current Carrying Capability: 300 mA Continuous Rail-to-Rail Switching Operation Fast Switching Times <20 ns Typical Power Consumption (<0.1 W) APPLICATIONS Cellular Phones PDAs MP3 Players Power Routing Battery-Powered Systems PCMCIA Cards Modems Audio and Video Signal Routing Communication Systems FUNCTIONAL BLOCK DIAGRAM ������ ��� �� ��� ��� ��� ��� �� ��� �������� ����� ��� � ����� � ����� GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. 1. <0.8 over full temperature range of –40°C to +125°C. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG836 exhibits break-before-make switching action. The ADG836 is available in 10-lead MSOP and 3 mm 3 mm 12-lead LFCSP packages. 2. Single 1.65 V to 3.6 V operation. 3. Compatible with 1.8 V CMOS logic. 4. High current handling capability (300 mA continuous current at 3.3 V). 5. Low THD + N (0.02% typ). 6. 3 mm 3 mm LFCSP package and 10-lead MSOP package. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved. ADG836–SPECIFICATIONS1(V DD Parameter +25C ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) 0.5 0.65 0.04 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH –40C to +85C –40C to +125C Unit Test Conditions/Comments 0 V to VDD V VDD = 2.7 V VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA; Test Circuit 1 VDD = 2.7 V, VS = 0.65 V, IS = 10 mA 0.75 0.8 0.075 0.08 0.15 0.16 0.1 ±0.2 ±1 ±0.2 ±1 Channel On Leakage ID, IS (ON) = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.) VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA VDD = 3.6 V VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Test Circuit 2 VS = VD = 0.6 V or 3.3 V; Test Circuit 3 ±10 ±100 ±15 ±120 nA typ nA max nA typ nA max 2 0.8 V min V max ±0.1 µA typ µA max pF typ VIN = VINL or VINH RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS = 1.5 V; Test Circuit 4 RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V; Test Circuit 5 VS = 1.5 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 7 S1A–S2A/S1B–S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 10 S1A–S1B/S2A–S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 9 RL = 32 , f = 20 Hz to 20 kHz, VS = 2 V p-p RL = 50 , CL = 5 pF; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 8 0.005 CIN, Digital Input Capacitance typ max typ max typ max 4 2 DYNAMIC CHARACTERISTICS tON Break-before-Make Time Delay (tBBM) 21 26 4 7 17 Charge Injection 40 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –67 dB typ Channel-to-Channel Crosstalk –90 dB typ –67 dB typ Total Harmonic Distortion (THD + N) 0.02 % Insertion Loss –3 dB Bandwidth CS (OFF) CD, CS (ON) –0.05 57 25 75 dB typ MHz typ pF typ pF typ 0.003 µA typ µA max tOFF POWER REQUIREMENTS IDD 28 29 8 9 5 1 4 VDD = 3.6 V Digital Inputs = 0 V or 3.6 V NOTES 1 Temperature range is as follows: Y version: –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. 0 ADG836 SPECIFICATIONS1 (V DD Parameter = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.) +25C ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) 0.65 0.72 0.04 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH –40C to +125C Unit 0 V to VDD V 0.8 0.88 0.08 0.085 0.23 0.24 0.16 ±0.2 ±0.4 ±0.2 ±0.6 Channel On Leakage ID, IS (ON) –40C to +85C VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA; Test Circuit 1 VDD = 2.3 V, VS = 0.7 V; IS = 10 mA VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA VDD = 2.7 V VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Test Circuit 2 VS = VD = 0.6 V or 2.4 V; Test Circuit 3 ±4 ±45 ±12 ±90 nA typ nA max nA typ nA max 1.7 0.7 V min V max ±0.1 µA typ µA max pF typ VIN = VINL or VINH RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS = 1.5 V; Test Circuit 4 RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V; Test Circuit 5 VS = 1.25 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 7 S1A–S2A/S1B–S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 10 S1A–S1B/S2A–S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 9 RL = 32 , f = 20 Hz to 20 kHz, VS = 1.5 V p-p RL = 50 , CL = 5 pF; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 8 0.005 CIN, Digital Input Capacitance typ max typ max typ max Test Conditions/Comments 4 2 DYNAMIC CHARACTERISTICS tON Break-before-Make Time Delay (tBBM) 23 29 5 7 17 Charge Injection 30 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –67 dB typ Channel-to-Channel Crosstalk –90 dB typ –67 dB typ Total Harmonic Distortion (THD + N) 0.022 % Insertion Loss –3 dB Bandwidth CS (OFF) CD, CS (ON) –0.06 57 25 75 dB typ MHz typ pF typ pF typ 0.003 µA typ µA max tOFF POWER REQUIREMENTS IDD 30 31 8 9 5 1.0 4.0 NOTES 1 Temperature range is as follows: Y version: –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 –3– VDD = 2.7 V Digital Inputs = 0 V or 2.7 V ADG836 SPECIFICATIONS1(V DD Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON = 1.65 V to 1.95 V, GND = 0 V, unless otherwise noted.) +25C 1 1.4 2 0.1 ±0.2 ±0.4 ±0.2 ±0.6 –40C to +85C 2.2 4 –40C to +125C Unit 0 V to VDD V 2.2 4 typ max max typ VDD = 1.95 V VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; Test Circuit 2 VS = VD = 0.6 V or 1.65 V; Test Circuit 3 ±4 ±25 ±10 ±75 0.65 VDD 0.35 VDD V min V max ±0.1 µA typ µA max pF typ VIN = VINL or VINH RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS = 1.5 V/0 V; Test Circuit 4 RL = 50 , CL = 35 pF VS1 = VS2 = 1 V; Test Circuit 5 VS = 1 V, RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 7 S1A–S2A/S1B–S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 10 S1A–S1B/S2A–S2B; RL = 50 , CL = 5 pF, f = 100 kHz; Test Circuit 9 RL = 32 , f = 20 Hz to 20 kHz, VS = 1.2 V p-p RL = 50 , CL = 5 pF; Test Circuit 8 RL = 50 , CL = 5 pF; Test Circuit 8 0.005 4 Break-before-Make Time Delay (tBBM) Charge Injection 20 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –67 dB typ Channel-to-Channel Crosstalk –90 dB typ –67 dB typ Total Harmonic Distortion, THD 0.14 % Insertion Loss –3 dB Bandwidth CS (OFF) CD, CS (ON) –0.08 57 25 75 dB typ MHz typ pF typ pF typ 0.003 µA typ µA max POWER REQUIREMENTS IDD VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA; Test Circuit 1 VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA VDD = 1.65 V, VS = 0.7 V, IS = 10 mA nA typ nA max nA typ nA max 28 37 7 9 21 tOFF Test Conditions/Comments 38 39 10 11 5 1.0 4 VDD = 1.95 V Digital Inputs = 0 V or 1.95 V NOTES 1 Temperature range is as follows: Y version: –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –4– REV. 0 ADG836 ABSOLUTE MAXIMUM RATINGS1 Table I. ADG836 Truth Table (TA = 25°C, unless otherwise noted.) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +4.6 V Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V Digital Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 4.6 V or 10 mA, Whichever Occurs First Peak Current, S or D 3.3 V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA 2.5 V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460 mA 1.8 V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420 mA (Pulsed at 1ms, 10% Duty Cycle Max) Continuous Current, S or D 3.3 V Operation 300 mA 2.5 V Operation 275 mA 1.8 V Operation 250 mA Operating Temperature Range Automotive (Y Version) . . . . . . . . . . . . . . . . –40°C to +125°C Storage Temperature Range . . . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .150°C MSOP Package JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 206°C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 44°C/W LFCSP Package JA Thermal Impedance (3-Layer Board) . . . . . . . . . 61.1°C/W IR Reflow, Peak Temperature <20 sec . . . . . . . . . . . . . . . .235°C Logic Switch A Switch B 0 1 Off On On Off NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. ORDERING GUIDE Model Temperature Range Package Description Package Option Branding* ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 ADG836YCP ADG836YCP-REEL ADG836YCP-REEL7 –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Lead Frame Chip Scale Package (LFCSP) Lead Frame Chip Scale Package (LFCSP) Lead Frame Chip Scale Package (LFCSP) RM-10 RM-10 RM-10 CP-12 CP-12 CP-12 S9A S9A S9A S9A S9A S9A *Branding on this package is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG836 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. 0 –5– ADG836 PIN CONFIGURATIONS ��� ���� ��� � ���� �� ������ � ��� ��� ��� � � ��� ��� � ��� � � �� ��� � �� ��� �� �� �� � ��� � ������ ��� ���� ���� �� ������ � � � �� �� � ��� �� ��� ������ �� ��� � ��� � 12-Lead LFCSP (CP-12) �� 10-Lead MSOP (RM-10) � ��� � ��� �� � �� ������� TERMINOLOGY VDD Most positive power supply potential. IDD Positive supply current. GND Ground (0 V) reference. S Source terminal. May be an input or output. D Drain terminal. May be an input or output. IN Logic control input. VD (VS) Analog voltage on terminals D, S. RON Ohmic resistance between D and S. RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. RON On resistance match between any two channels. IS (OFF) Source leakage current with the switch off. ID (OFF) Drain leakage current with the switch off. ID, IS (ON) Channel leakage current with the switch on. VINL Maximum input voltage for Logic 0. VINH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. CS (OFF) Off switch source capacitance. Measured with reference to ground. CD (OFF) Off switch drain capacitance. Measured with reference to ground. CD, CS (ON) On switch capacitance. Measured with reference to ground. CIN Digital input capacitance. tON Delay time between the 50% and the 90% points of the digital input and switch on condition. tOFF Delay time between the 50% and the 90% points of the digital input and switch off condition. tBBM On or off time measured between the 80% points of both switches when switching from one to another. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching. Off Isolation A measure of unwanted signal coupling through an off switch. Crosstalk A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance. –3 dB Bandwidth The frequency at which the output is attenuated by 3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. THD + N The ratio of the harmonics amplitude plus noise of a signal, to the fundamental. –6– REV. 0 Typical Performance Characteristics–ADG836 0.60 1.2 TA = 25C VDD = 3.3V 0.55 VDD = 3V 1.0 VDD = 2.7V ON RESISTANCE () ON RESISTANCE () 0.50 0.45 0.40 VDD = 3.3V VDD = 3.6V 0.35 0.8 +125C +85C 0.6 0.4 +25C 0.30 0.20 0 0.5 1.0 1.5 2.0 VD, VS (V) 2.5 3.0 0 3.5 0.6 VDD = 2.5V ON RESISTANCE () ON RESISTANCE () 2.0 2.5 3.0 1.0 VDD = 2.3V VDD = 2.7V 0.4 0.3 +125C 0.8 +85C 0.6 +25C 0.4 –40C 0.2 0 0.5 1.0 1.5 2.0 0 2.5 VD, VS (V) 0 0.5 1.0 1.5 1.4 TA = 25C –40C VDD = 1.8V 1.2 VDD = 1.65V +25C +125C ON RESISTANCE () 1.4 1.2 VDD = 1.8V 1.0 0.8 0.6 2.5 TPC 5. On Resistance vs. VD (VS) for Different Temperature, 2.5 V 1.8 1.6 2.0 VD, VS (V) TPC 2. On Resistance vs. VD (VS) VDD = 2.5 V ± 0.2 V ON RESISTANCE () 1.5 VDD = 2.5V 0.7 1.0 0.8 0.7 +85C 0.5 VDD = 1.95V 0.2 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 VD, VS (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VD, VS (V) TPC 3. On Resistance vs. VD (VS), VDD = 1.8 V ± 0.15 V REV. 0 1.0 1.2 TA = 25C 0.2 0.5 TPC 4. On Resistance vs. VD (VS) for Different Temperatures, 3.3 V 0.8 0.5 0 VD, VS (V) TPC 1. On Resistance vs. VD (VS) VDD = 2.7 V to 3.6 V 0.2 –40C 0.2 0.25 TPC 6. On Resistance vs. VD (VS) for Different Temperatures, 1.8 V –7– 1.8 ADG836 80 90 VDD = 3.3V ID, IS (ON) 70 40 60 20 ���� ���� ������� ���� TA = 25ºC 80 60 0 50 40 VCC = 3.3V –20 –40 20 –60 –80 VCC = 2.5V 30 IS (OFF) VCC = 1.8V 10 0 20 40 60 80 100 0 120 0 0.5 1.0 1.5 ����������� ���� TPC 7. Leakage Currents vs. Temperature, 3.3 V 60 �� 20 ���� ���� CURRENT (nA) ��� � ���� ID, IS (ON) 10 0 –10 –20 �� ��� � �� �� ��� � ���� �� IS (OFF) ��� � ���� ���� � –30 20 40 60 80 100 � ��� 120 ��� � �� ��� � TEMPERATURE (C) �� �� �� �� ��� ��� ����������� ���� TPC 11. tON/tOFF Times vs. Temperature TPC 8. Leakage Current vs. Temperature, 2.5 V 50 3.5 ��� � ���� ��� �� 30 0 3.0 �� 40 –40 2.5 TPC 10. Charge Injection vs. Source Voltage VDD = 2.5V 50 2.0 �� ��� � VDD = 1.8V � 40 �� �� ATTENUATION (dB) CURRENT (nA) 30 IS, ID (ON) 20 10 0 �� �� TA = 25ºC VCC = 3.3V/2.5V/1.8V �� �� �� �� ��� IS (OFF) –10 �� ��� ��� –20 0 20 40 60 80 100 ��� ���� 120 TEMPERATURE (C) ��� � �� ��� ���� ��������� ����� TPC 9. Leakage Current vs. Temperature, 1.8 V TPC 12. Bandwidth –8– REV. 0 ADG836 0.10 0 VDD = 2.5V TA = 25C S1A–D1 32 LOAD 0.08 1.5V p-p –10 TA = 25ºC VCC = 3.3V/2.5V/1.8V –30 THD + N (%) ATTENUATION (dB) –20 –40 –50 –60 0.06 0.04 0.02 –70 –80 ���� ��� � �� ��� 0 20 ���� –10 ������� –20 ATTENUATION (dB) TA = 25ºC VCC = 3.3V/2.5V/1.8V –40 ������� –50 –60 –70 –80 –90 ��� � �� ��� ���� ��������� ����� TPC 14. Crosstalk vs. Frequency REV. 0 200 500 1k 2k 5k 10k TPC 15. Total Harmonic Distortion + Noise TPC 13. Off Isolation vs. Frequency –100 ���� 100 FREQUENCY (Hz) ��������� ����� –30 50 –9– 20k ADG836 Test Circuits ��� �� � �� �� ����� � � ��� � ������ � � �� ����� � �� Test Circuit 1. On Resistance � �� �� � �� ���� � �� Test Circuit 2. Off Leakage Test Circuit 3. On Leakage ��� ����� ��� ��� ��� �� ���� � �� ��� �� ��� ��� ��� �� ���� ��� ���� ��� ��� ��� ���� Test Circuit 4. Switching Times, tON, tOFF ��� ����� ��� ��� ��� ��� ��� �� ���� ���� � �� �� ��� ��� �� ��� �� ���� ��� ���� ���� ��� Test Circuit 5. Break-before-Make Time Delay, tBBM ��� �� �� � �� �� ��� ��� ��� �� ��� ���� ��� �� ���� ��� ����� ���� � �� � ����� Test Circuit 6. Charge Injection –10– REV. 0 ADG836 ����� ��� ����� ������� �������� ��� �� ��� ��� ��� ������� �������� ���� ��� �� � �� ��� ��� ��� ��������� � �� ��� �� ��� ���� �� ���� �� �� ��� ��� ������������������ ��������� � �� ��� ���� �� Test Circuit 9. Channel-to-Channel Crosstalk (S1A–S1B) ��� ������� �������� ������� �������� ���� ��� ��� �� ��� ��������� ���� � �� ��� �� ��� ��� �� �� ��� � ���� ��� �� ���� ���� ������ ���� ������� ������ ��� �� ��� ������������������ ��������� � �� ��� �� ��� ���� �� Test Circuit 10. Channel-to-Channel Crosstalk (S1A–S2A) Test Circuit 8. Bandwidth REV. 0 � ��� ��� ��� ��� ��� ��� ��� Test Circuit 7. Off Isolation ����� ��� –11– ADG836 OUTLINE DIMENSIONS 10-Lead Mini Small Outline Package [MSOP] (RM-10) Dimensions shown in millimeters C04308–0–8/03(0) 3.00 BSC 6 10 4.90 BSC 3.00 BSC 1 5 PIN 1 0.50 BSC 0.95 0.85 0.75 1.10 MAX 0.15 0.00 0.27 0.17 SEATING PLANE 0.80 0.60 0.40 8 0 0.23 0.08 COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MO-187BA 12-Lead Lead Frame Chip Scale Package [LFCSP] (CP-12) Dimensions shown in millimeters 3.00 BSC SQ 0.60 MAX 0.45 PIN 1 INDICATOR 0.75 0.55 0.35 2.75 BSC SQ TOP VIEW 9 10 11 12 BOTTOM VIEW 8 7 6 12 MAX SEATING PLANE 4 2 3 0.50 BSC 0.80 MAX 0.65 TYP 1.00 0.85 0.80 5 1 PIN 1 INDICATOR 1.45 1.30 SQ* 1.15 0.25 MIN 0.05 MAX 0.02 NOM 0.30 0.23 0.18 0.20 REF COPLANARITY 0.08 *COMPLIANT TO JEDEC STANDARDS MO-220-VEED-1 EXCEPT FOR EXPOSED PAD DIMENSION –12– REV. 0