Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PINNING - SOT93 PIN PBYR30100PT series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) Anode 1 (a) 2 Cathode (k) 3 Anode 2 (a) tab Cathode (k) MAX. MAX. MAX. UNIT PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) 60PT 60 80PT 80 100PT 100 V 0.7 30 0.7 30 0.7 30 V A PIN CONFIGURATION DESCRIPTION 1 PARAMETER SYMBOL tab a1 a2 k 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 139 ˚C IO(AV) Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. IO(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj CONDITIONS square wave; δ = 0.5; Tmb ≤ 124 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 124 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode. Non-repetitive peak reverse tp = 100 µs current per diode. Storage temperature Operating junction temperature MIN. - MAX. -60 60 60 60 -80 80 80 80 UNIT -100 100 100 100 V V V - 30 A - 43 30 A A - 180 200 A A - 162 1 A2s A - 1 A -65 - 175 150 ˚C ˚C 1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base. October 1994 1 Rev 1.100 Philips Semiconductors Product Specification Rectifier Diode Schottky Barrier PBYR30100PT series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes in free air. Rth j-a MIN. TYP. MAX. UNIT - 45 1.4 1.0 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.61 0.74 0.77 5.0 5.0 600 0.70 0.85 0.85 150 15 - V V V µA mA pF STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) Cd Junction capacitance (per diode) IF = 15 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 15 A; Tj = 25˚C VR = VRWM; Tj = 25 ˚C VR = VRWM; Tj = 125 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier 20 PBYR30100PT series PBYR30100PT PF / W Tmb(max) / C Vo = 0.550 V Rs = 0.010 Ohms 122 100 129 10 IR/ mA PBYR30100PT D = 1.0 Tj/ C = 150 15 0.5 125 0.2 10 0.1 tp I D= 5 10 0 1 143 0.1 100 75 50 t T 0 tp T 136 150 26 20 0.01 10 20 30 40 IF(AV) / A Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 15 PBYR30100 PF / W Tmb(max) / C 70 80 90 100 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Cd/ pF 129 10000 136 1000 143 100 150 15 10 Vo = 0.550 V Rs = 0.010 Ohms 50 60 VR/ V PBYR30100PT a = 1.57 1.9 2.2 10 2.8 4 5 0 5 0 10 1 10 VR/ V IF(AV) / A Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). IF / A 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. Zth j-mb (K/W) PBYR30100PT 10 100 Tj = 25 C Tj = 125 C 80 Max Typ 1 60 40 0.1 PD tp 20 t 0 0 0.5 1 VF / V 1.5 0.01 2 10us Fig.3. Typical and maximum forward characteristic per diode; IF = f(VF); parameter Tj October 1994 1ms tp / s 0.1s 10s Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). 3 Rev 1.100 Philips Semiconductors Product Specification Rectifier Diode Schottky Barrier PBYR30100PT series MECHANICAL DATA Dimensions in mm 15.2 max 14 Net Mass: 5 g 4.6 max 13.6 4.25 4.15 2 max 2 4.4 21 max 12.7 max 2.2 max 0.5 min dimensions within this zone are uncontrolled 1 2 5.5 13.6 min 3 1.15 0.95 0.5 M 0.4 1.6 11 Fig.7. SOT93; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR30100PT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 5 Rev 1.100