DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYQ63 Ripple blocking diode Product specification 1998 Dec 04 Philips Semiconductors Product specification Ripple blocking diode BYQ63 FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward current transients and oscillations • Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies 2/3 page k(Datasheet) • Available in ammo-pack • Also available with preformed leads for easy insertion. The SOD57 is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 300 V VR continuous reverse voltage − 300 V IF(AV) average forward current averaged over any 20 ms period; Ttp = 85 °C; lead length = 10 mm; see Fig.2; see also Fig.4 − 1.05 A averaged over any 20 ms period; Tamb = 60 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 − 0.68 A Ttp = 85 °C − 9.6 A Tamb = 60 °C − 6.4 A t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 30 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1998 Dec 04 2 Philips Semiconductors Product specification Ripple blocking diode BYQ63 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current CONDITIONS MIN. TYP. MAX. UNIT IF = 1 A; Tj = Tj max; see Fig.5 − − 1.3 IF = 1 A; see Fig.5 − − 2.15 V VR = VRRMmax; see Fig.6 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.6 − − 150 µA − − 1.5 µs 400 − − ns V tfr forward recovery time when switched to IF = 5 A in 50 ns; see Fig.9 ton turn-on time when switched from VF = 0 to VF = 3 V; measured between 10% and 90% of IFmax; see Fig.11 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 − − 150 ns Cd diode capacitance f = 1 MHz; VR = 0; see Fig.7 − 35 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT 46 K/W 100 K/W Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of associated Handbook.’ 1998 Dec 04 3 Philips Semiconductors Product specification Ripple blocking diode BYQ63 GRAPHICAL DATA MLB533 2 MLB534 1 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) lead length 10 mm 1 0.5 0 0 100 0 T tp ( oC) 200 100 0 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.8. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Tamb ( oC) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBD427 MLB532 3 200 8 handbook, halfpage IF (A) P (W) 6 a=3 2 2.5 2 1.57 4 1.42 1 2 0 0 0.5 I F(AV) (A) 0 1 0 2 4 VF (V) 6 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1998 Dec 04 Fig.5 4 Forward current as a function of forward voltage; maximum values. Philips Semiconductors Product specification Ripple blocking diode BYQ63 MGC550 103 handbook, halfpage MBD437 10 2 handbook, halfpage IR (µA) Cd (pF) 102 10 10 1 1 0 100 Tj (°C) 200 1 10 2 10 3 V R (V) 10 4 f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.6 10 Reverse current as a function of junction temperature; maximum values. Fig.7 50 handbook, halfpage Diode capacitance as a function of reverse voltage; typical values. MGC500 handbook, halfpage V F 25 100% 110% 7 50 t fr t IF 2 3 10% t MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1998 Dec 04 Fig.9 Forward recovery time definition. 5 Philips Semiconductors Product specification Ripple blocking diode BYQ63 handbook, full pagewidth 3V VF DUT (V) 0 50 Ω 10 Ω 100% 90% IF (A) 10% 0 ton MBH530 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 10 ns. Fig.10 Test circuit and turn-on time waveform and definition. handbook, full pagewidth IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.11 Test circuit and reverse recovery time waveform and definition. 1998 Dec 04 6 MAM057 Philips Semiconductors Ripple blocking diode PACKAGE OUTLINE Product specification BYQ63 Hermetically sealed glass package; axial leaded; 2 leads SOD57 (1) k D G L a b L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. L min. mm 0.81 3.81 4.57 28 0 2.5 5 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14 SOD57 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Dec 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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