SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS M1FE40 Case : M1F Unit : mm 400V 1A RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load IO 50Hz sine wave, R-load Peak Surge Forward Current IFSM ●Electrical Characteristics (If not specified Item Symbol Forward Voltage VF Reverse Current IR θjl Thermal Resistance θja θjc Conditions Ta=25℃ On glass-epoxy substrate Tc=103℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ Ratings -55∼150 150 400 1.0 2.0 25 Unit ℃ ℃ V A Ratings Max.1.1 Max.10 Max.20 Max.80 Max.18 Unit V μA A Tl=25℃) Conditions IF=1A, Pulse measurement V R=VRM, Pulse measurement junction to lead junction to ambient, On glass-epoxy substrate junction to case Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd ℃/W M1FE40 Forward Voltage Forward Current IF [A] 10 Tl=150°C [MAX] Tl=150°C [TYP] 1 Tl=25°C [MAX] Tl=25°C [TYP] Pulse measurement per diode 0.1 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] 1.4 1.6 M1FE40 Forward Power Dissipation Forward Power Dissipation PF [W] 1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave 1.2 M1FE40 Derating Curve Average Rectified Forward Current IO [A] 3 2.5 SIN 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = VRM IO 0 0 VR tp D=tp /T T M1FE40 Derating Curve Average Rectified Forward Current IO [A] 1.5 2-inch glass-epoxy substrate Soldering land 2mmφ Conductor layer 35µm SIN 1 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = VRM IO 0 0 VR tp D=tp /T T M1FE40 Peak Surge Forward Capability IFSM 50 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 Transient Thermal Impedance θjc θja θjl [°C/W] 0.1 10-4 1 10 100 10-3 10-2 M1FE40 100 Time t [s] 10-1 101 Transient Thermal Impedance 102 θjc θjl θja 103 M1FE40 θja - Conductor Pattern Area 160 Glass-epoxy substrate Conductor layer 35µm 140 θja [°C/W] 120 100 80 60 40 20 0 1 10 100 Conductor pattern area [mm2] 1000