STMICROELECTRONICS STS11NF3LL

STS11NF3LL

N-CHANNEL 30V - 0.009 Ω - 11A SO-8
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
STS11NF3LL
■
■
■
■
V DSS
R DS(on)
ID
30 V
< 0.011 Ω
11 A
TYPICAL RDS(on) = 0.011 Ω @ 4.5V
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high efficiency are of paramount importance.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS FOR MOBILE
PCs
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
V GS
ID
I DM (•)
P tot
Parameter
Value
Un it
Drain-source Voltage (V GS = 0)
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
± 15
V
Drain Current (continuous) at Tc = 25 C
Drain Current (continuous) at Tc = 100 o C
11
7
A
A
Drain Current (pulsed)
44
A
2.5
W
G ate-source Voltage
o
o
T otal Dissipation at Tc = 25 C
(•) Pulse width limited by safe operating area
May 2000
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STS11NF3LL
THERMAL DATA
R thj -amb
Tj
T s tg
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction T emperature
Storage Temperature
o
50
150
-65 to 150
C/W
o
C
o
C
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
30
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
V GS = 4.5 V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
1
V
0.009
0.011
I D = 5.5 A
I D = 5.5 A
0.011
0.013
11
Ω
Ω
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 5.5 A
V GS = 0 V
Min.
Typ.
Max.
Unit
20
S
1700
500
115
pF
pF
pF
STS11NF3LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 15 V
I D = 5.5 A
R G = 4.7 Ω
V GS = 4.5 V
(Resistive Load, see fig.3)
47
60
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V
25
10
10
33
nC
nC
nC
Typ.
Max.
Unit
ID = 11 A
V GS = 4.5 V
ns
ns
SWITCHING OFF
Symbo l
t d(of f)
tf
Parameter
Turn-off Delay T ime
Fall T ime
Test Con ditions
Min.
34
24
V DD = 24 V I D = 5.5 A
R G = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig.3)
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 11 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 11 A
di/dt = 100 A/µs
Tj = 150 o C
V DD = 15 V
(Resistive Load, see fig.5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
11
44
A
A
1.5
V
40
ns
52
nC
2.4
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STS11NF3LL
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STS11NF3LL
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS11NF3LL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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