STB3020L N - CHANNEL 30V - 0.019Ω - 40A - D2PAK STripFET POWER MOSFET TYPE V DSS R DS(on) ID ST B3020L 30 V < 0.022 Ω 40 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-AC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 40 A ID Drain Current (continuous) at Tc = 100 C o 28 A 160 A 80 W 0.53 W /o C I DM (•) P tot Drain Current (pulsed) o T otal Dissipation at Tc = 25 C Derating Factor T s tg Tj Storage T emperature Max. O perating Junct ion T emperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area March 1999 1/8 STB3020L THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 1.875 62.5 0.5 300 C/W oC/W o C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 30 Unit V 1 10 µA µA ± 100 nA Typ. Max. Unit 2.5 V 0.019 0.033 0.022 0.038 Ω Ω T c = 125 oC V GS = ± 20 V ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V V GS = 5V ID = 20 A ID = 20 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 1 40 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =20 A V GS = 0 Min. Typ. Max. Unit 5 20 S 1270 350 115 pF pF pF STB3020L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay T ime Rise Time V DD = 15 V I D = 19 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) 28 220 Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V ID = 38 A V GS = 5 V 21 9 11 29 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbo l Parameter Test Con ditions Min. t d(of f) tf Turn-off Delay T ime Fall T ime V DD = 15 V I D = 19 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) 45 35 ns ns tr (Voff) tf tc Off-voltage Rise T ime Fall T ime Cross-over Time V DD = 24 V I D = 38 A V GS = 4.5 V R G = 4.7 Ω (Induct ive Load, see fig. 5) 30 85 125 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 40 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 38 A di/dt = 100 A/µs T j = 150 o C V DD = 15 V (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 40 160 A A 1.5 V 45 ns 60 nC 2.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STB3020L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB3020L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB3020L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB3020L TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL”A” DETAIL ”A” A1 B2 E B G L2 L L3 P011P6/E 7/8 STB3020L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. 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