PHILIPS PHT2NQ10T

PHT2NQ10T
N-channel TrenchMOS transistor
M3D087
Rev. 01 — 16 October 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHT2NQ10T in SOT223
2. Features
■ TrenchMOS™ technology
■ Fast switching
■ Surface mount package.
3. Applications
■ Primary side switch in DC to DC converters
■ High speed driver
■ Fast, general purpose switch.
4. Pinning information
Table 1:
Pinning - SOT223, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
4
drain (d)
Simplified outline
Symbol
d
4
g
1
Top view
2
3
MSB002 - 1
SOT223
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
MBB076
s
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25°C ≤ to ≤ 150 °C
−
100
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 10 V
−
2.5
A
Ptot
total power dissipation
Tsp = 25 °C
−
6.25
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
315
430
mΩ
Conditions
Min
Max
Unit
100
V
VGS = 10 V; ID = 1.75 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
25°C ≤ to ≤ 150 °C
−
VDGR
drain-gate voltage (DC)
25°C ≤ to ≤ 150 °C; RGS = 20 kΩ
−
100
V
VGS
gate-source voltage (DC)
−
±20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
−
2.5
A
Tsp = 100 °C; VGS = 10 V;
−
1.6
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
−
10
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
−
6.25
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
−
2.5
A
ISM
peak source (diode forward) current Tsp = 25 °C; tp ≤ 10 µs
−
10
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID =2.5 A;
tp = 0.2 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C; Figure 4
−
32
mJ
IAS
non-repetitive avalanche current
unclamped inductive load; VDD ≤ 15 V;
RGS = 50 Ω; VGS = 10 V; Figure 4
−
2.5
A
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
2 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
03aa17
03aa25
120
120
Pder
Ider
(%)
(%)
80
80
40
40
0
0
0
50
100
150
o
0
200
50
100
150
o
200
Tsp ( C)
Tsp ( C)
VGS ≥ 10 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ag27
102
03ag34
10
ID
(A)
RDSon = VDS/ ID
IAS
10
tp = 10 µs
(A)
100 µs
25 ºC
1
1
1 ms
10-1
DC
10 ms
100 ms
Tj prior to avalanche = 125 ºC
10-1
10-2
1
10
102
10-2
103
Tsp = 25 °C; IDM is single pulse.
1
10
Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C and 125 °C.
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
10-1
tp (ms)
VDS (V)
Rev. 01 — 16 October 2001
3 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-sp)
thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5
20
K/W
Rth(j-a)
thermal resistance from junction to ambient
150
K/W
mounted on a printed-circuit board;
minimum footprint
7.1 Transient thermal impedance
03ag26
102
Zth(j-sp)
(K/W)
δ = 0.5
10
0.2
0.1
0.05
1
δ=
P
tp
T
0.02
t
tp
single pulse
T
10-1
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Tsp = 25 °C
Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
4 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
100
120
−
V
Tj = −55 °C
89
−
−
V
2
3
4
V
Tj = 150 °C
1.2
−
−
V
Tj = −55 °C
−
−
6
V
−
1
25
µA
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 10
Tj = 25 °C
IDSS
drain-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
−
4
250
µA
−
10
100
nA
Tj = 25 °C
−
315
430
mΩ
Tj = 150 °C
−
725
990
mΩ
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 1.75 A; Figure 8 and 9
Dynamic characteristics
gfs
forward transconductance
VDS = 5 V; ID = 2.5 A
−
3
−
S
Qg(tot)
total gate charge
ID = 2.5 A; VDD = 80 V; VGS = 10 V; Figure 14
−
5.1
−
nC
Qgs
gate-source charge
−
1
−
nC
Qgd
gate-drain (Miller) charge
−
2.1
−
nC
Ciss
input capacitance
−
160
−
pF
Coss
output capacitance
−
29
−
pF
Crss
reverse transfer capacitance
−
18
−
pF
td(on)
turn-on delay time
−
4.5
−
ns
tr
rise time
−
7.7
−
ns
td(off)
turn-off delay time
−
7.8
−
ns
tf
fall time
−
2.5
−
ns
−
0.9
1.5
V
−
45
−
ns
−
90
−
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDD = 50 V; RD = 27 Ω; VGS = 10 V; RG = 6 Ω
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 2.5 A; VGS = 0 V; Figure 13
trr
reverse recovery time
Qr
recovered charge
IS = 2.5 A; dIS/dt = −100 A/µs; VGS = 0 V
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
5 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
03ag28
03ag30
6
10
ID
VGS = 10V
Tj = 25ºC
VDS > ID X RDSon
ID
(A)
8
7V
(A)
6.5 V
4
6
6V
4
2
5.5 V
150ºC
2
5V
Tj = 25ºC
4.5 V
0
0
0
1
2
3
4
VDS (V)
0
5
Tj = 25 °C
4
6
VGS (V)
8
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa29
03ag29
3
0.6
Tj = 25ºC
RDSon
2
VGS = 6V
6.5 V
7V
10 V
a
(Ω)
0.5
2.5
2
0.4
1.5
0.3
1
0.2
0.5
0.1
0
0
2
4
6
8
ID (A)
10
-60
Tj = 25 °C
0
60
120
o
180
Tj ( C)
R DSon
a = --------------------------R
°
DSon ( 25 C )
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
6 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
10-1
ID
(A)
10-2
03aa32
5
VGS(th)
(V)
4
max
3
typ
2
min
0
10-6
60
typ
max
10-4
10-5
0
min
10-3
1
-60
03aa35
120
o
Tj ( C)
0
1
180
2
3
5
4
VGS (V)
Tj = 25 °C; VDS = 10 V
ID = 1 mA; VDS = VGS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
03ag32
103
C
(pF)
Ciss
102
Coss
Crss
10
10-1
1
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
7 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
03ag31
03ag33
6
15
VGS = 0 V
IS
(A)
VGS
ID = 2.5 A
(V)
12
Tj = 25ºC
4
9
VDD = 20 V
VDD = 80 V
6
2
3
Tj = 25ºC
150ºC
0
0
0
0.4
0.8
VSD (V)
1.2
0
Tj = 25 °C and 150 °C; VGS = 0 V
4
6
QG (nC)
8
ID = 2.5 A; VDD = 80 V, 20V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
2
Rev. 01 — 16 October 2001
8 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
9. Package outline
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 15. SOT223.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
9 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
10. Revision history
Table 6:
Revision history
Rev Date
01
20001016
CPCN
Description
-
Product specification; initial version
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Product data
Rev. 01 — 16 October 2001
10 of 12
PHT2NQ10T
Philips Semiconductors
N-channel TrenchMOS transistor
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 08918
Rev. 01 — 16 October 2001
11 of 12
Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 16 October 2001
Document order number: 9397 750 08918