IRF IRLBD59N04E

PD -93910
IRLBD59N04E
HEXFET® Power MOSFET
l
l
l
l
l
l
Integrated Temperature Sensing Diode
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
Zener Gate Protected
VDSS = 40V
RDS(on) = 0.018Ω
ID = 59A†
Description
The IRLBD59N04E is a 40V, N-channel HEXFET®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
5 Lead-D2Pak
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
IG
VESD
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
VGS Clamp Current
Electrostatic Votage Rating‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
59†
41
230
130
0.89
± 10
320
35
13
2.2
± 50
± 2.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
1.12
40
°C/W
1
4/11/00
IRFLBD59N04E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
40
–––
–––
–––
1.0
10
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.036
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.9
110
30
74
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS
gfs
Gate Threshold Voltage
Clamp Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
2.0
LS
Internal Source Inductance
–––
5.0
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
–––
–––
–––
–––
–––
–––
2310
640
130
2250
580
530
V(BR)DSS
IGSS
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.018
VGS = 10V, ID = 35A „
Ω
0.021
VGS = 5.0V, ID = 30A „
2.0
V
VDS = VGS, ID = 250µA
20
V
IGSS = 20µA
–––
S
VDS = 25V, ID = 35A
25
VDS = 40V, VGS = 0V
µA
250
VDS = 32V, VGS = 0V, TJ = 150°C
1.0
VGS = 5.0V
µA
-1.0
VGS = -5.0V
53
ID = 35A
16
nC
VDS = 32V
18
VGS = 5.0V, See Fig. 6 and 13 „
–––
VDD = 20V
–––
ID = 35A
ns
–––
RG = 5.1Ω,
–––
VGS = 5.0V, See Fig.10 „
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
59
––– –––
showing the
A
G
integral reverse
––– ––– 230
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 35A, VGS = 0V „
––– 54
81
ns
TJ = 25°C, IF = 35A
––– 90 130
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Sense Diode Rating
VFM
∆VF/∆TJ
2
Parameter
Sense Diode Maximum Voltage Drop
Sense Diode Temperature Coefficient
Min. Typ. Max. Units
Conditions
675 ––– 725
mV IF = 250µA
-1.30 -1.40 -1.58 mV/°C IF = 250µA, See Fig.14
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IRLBD59N04E
1000
1000
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
2.7V
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
100
TJ = 175 ° C
V DS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
1000
3.0
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
1
20µs PULSE WIDTH
TJ = 175 °C
8.0
ID = 59A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFLBD59N04E
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
1000
Coss
VGS , Gate-to-Source Voltage (V)
10
10000
ID = 35A
V DS = 32V
V DS = 20V
8
6
4
2
Crss
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
0
100
10
20
30
40
50
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
I D , Drain Current (A)
100
100
TJ = 175 ° C
10
TJ = 25 ° C
1ms
10
10ms
1
0.1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100us
3.0
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLBD59N04E
60
VDS
LIMITED BY PACKAGE
50
VGS
RD
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
40
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
10
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFLBD59N04E
800
D R IV E R
L
VDS
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP
BOTTOM
ID
14A
29A
35A
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGD
0.80
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
Sense Diode Voltage Drop (V)
QGS
0.70
IF = 250uA
0.60
0.50
.3µF
D.U.T.
+
V
- DS
0
VGS
20
40
60
80
100
120
140
160
180
T J , Junction Temperature (°C)
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
0.40
Fig 14. Sense Diode Voltage Drop
Vs.Temperature
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IRLBD59N04E
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 15. For N-channel HEXFET® power MOSFETs
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7
IRFLBD59N04E
Case Outline 5 Lead-D2Pak (SMD-220)
PIN ASSIGNMENTS
1
2
3
4
5
- G - GATE
- T1 - ANODE
- D - DRAIN
- T2 - CATHODE
- S - SOURCE
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 0.52mH
RG = 25Ω, IAS = 35A. (See Figure 12)
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Current limited by the package ( Die current is 59A)
‡ C = 100pF, R = 1.5kΩ
ƒ ISD ≤ 35A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
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Data and specifications subject to change without notice. 4/00
8
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