PD -93910 IRLBD59N04E HEXFET® Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS(on) = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET. Absolute Maximum Ratings 5 Lead-D2Pak Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt IG VESD TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp Current Electrostatic Votage Rating Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 59 41 230 130 0.89 ± 10 320 35 13 2.2 ± 50 ± 2.0 -55 to + 175 A W W/°C V mJ A mJ V/ns mA kV °C °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA www.irf.com Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 1.12 40 °C/W 1 4/11/00 IRFLBD59N04E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 40 ––– ––– ––– 1.0 10 29 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.036 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.9 110 30 74 RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS gfs Gate Threshold Voltage Clamp Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 2.0 LS Internal Source Inductance ––– 5.0 Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 2310 640 130 2250 580 530 V(BR)DSS IGSS Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.018 VGS = 10V, ID = 35A Ω 0.021 VGS = 5.0V, ID = 30A 2.0 V VDS = VGS, ID = 250µA 20 V IGSS = 20µA ––– S VDS = 25V, ID = 35A 25 VDS = 40V, VGS = 0V µA 250 VDS = 32V, VGS = 0V, TJ = 150°C 1.0 VGS = 5.0V µA -1.0 VGS = -5.0V 53 ID = 35A 16 nC VDS = 32V 18 VGS = 5.0V, See Fig. 6 and 13 ––– VDD = 20V ––– ID = 35A ns ––– RG = 5.1Ω, ––– VGS = 5.0V, See Fig.10 D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 32V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 59 ––– ––– showing the A G integral reverse ––– ––– 230 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V ––– 54 81 ns TJ = 25°C, IF = 35A ––– 90 130 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Sense Diode Rating VFM ∆VF/∆TJ 2 Parameter Sense Diode Maximum Voltage Drop Sense Diode Temperature Coefficient Min. Typ. Max. Units Conditions 675 ––– 725 mV IF = 250µA -1.30 -1.40 -1.58 mV/°C IF = 250µA, See Fig.14 www.irf.com IRLBD59N04E 1000 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 2.7V 10 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C 100 TJ = 175 ° C V DS = 15V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 1000 3.0 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 2.0 1 20µs PULSE WIDTH TJ = 175 °C 8.0 ID = 59A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFLBD59N04E VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd Ciss 1000 Coss VGS , Gate-to-Source Voltage (V) 10 10000 ID = 35A V DS = 32V V DS = 20V 8 6 4 2 Crss 100 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 0 100 10 20 30 40 50 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us I D , Drain Current (A) 100 100 TJ = 175 ° C 10 TJ = 25 ° C 1ms 10 10ms 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100us 3.0 TC = 25 ° C TJ = 175 ° C Single Pulse 1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLBD59N04E 60 VDS LIMITED BY PACKAGE 50 VGS RD D.U.T. I D , Drain Current (A) RG + -VDD 40 VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 10 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFLBD59N04E 800 D R IV E R L VDS D .U .T RG + V - DD IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP BOTTOM ID 14A 29A 35A 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGD 0.80 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF Sense Diode Voltage Drop (V) QGS 0.70 IF = 250uA 0.60 0.50 .3µF D.U.T. + V - DS 0 VGS 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 0.40 Fig 14. Sense Diode Voltage Drop Vs.Temperature www.irf.com IRLBD59N04E Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRFLBD59N04E Case Outline 5 Lead-D2Pak (SMD-220) PIN ASSIGNMENTS 1 2 3 4 5 - G - GATE - T1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 0.52mH RG = 25Ω, IAS = 35A. (See Figure 12) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Current limited by the package ( Die current is 59A) C = 100pF, R = 1.5kΩ ISD ≤ 35A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. 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