IRF IRF1704

PD -94012B
IRF1704
AUTOMOTIVE MOSFET
Benefits
l
l
l
l
l
l
l
200°C Operaing Temperature
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Repetitive Avalanche Allowed
up to Tj Max
Automotive Qualified (Q101)
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004Ω
G
ID = 170A†
S
Description
Specifically designed for Automotive applications, this HEXFET® power
MOSFET has a 200°C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET® power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
TLEAD
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Lead Temperature‡
Soldering Temperature, for 10 seconds
170†
120
680
230
1.3
± 20
670
100
23
1.9
-55 to + 200
Mounting torque, 6-32 or M3 srew
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
175
300 (1.6mm from case )
°C
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.75
–––
62
°C/W
1
02/13/02
IRF1704
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
40
–––
–––
2.0
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.036
–––
–––
–––
–––
–––
–––
–––
170
42
39
16
120
73
37
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
–––
–––
–––
–––
–––
–––
6950
1660
200
6250
1470
2320
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.004
Ω
VGS = 10V, ID = 100A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 100A
20
VDS = 40V, VGS = 0V
µA
250
VDS = 32V, VGS = 0V, TJ = 175°C
200
VGS = 20V
nA
-200
VGS = -20V
260
ID = 100A
63
nC
VDS = 32V
59
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 20V
–––
ID = 100A
ns
–––
RG = 2.5Ω
–––
VGS = 10V,See Fig. 10 „
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 170†
showing the
A
G
integral reverse
––– ––– 680
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 100A, VGS = 0V „
––– 73 110
ns
TJ = 25°C, IF = 100A
––– 200 300
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 0.13mH, VGS = 10V
RG = 25Ω, IAS = 100A. (See Figure 12)
ƒ ISD ≤ 100A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 200°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
‡ At the point of termination of the leads at the PCB, the temp.
should be limited to 175°C. The device case temperature is
allowed to be higher
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IRF1704
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
4.5V
20µs PULSE WIDTH
T = 25 C
°
J
10
0.1
1
10
4.5V
100
Fig 1. Typical Output Characteristics
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 200 ° C
100
V DS = 15V
20µs PULSE WIDTH
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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9.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
6.0
1
10
100
Fig 2. Typical Output Characteristics
1000
5.0
°
J
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
4.0
20µs PULSE WIDTH
T = 200 C
10
0.1
ID = 170A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100120140160180200220
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF1704
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
10000
8000
Ciss
6000
4000
Coss
2000
20
VGS , Gate-to-Source Voltage (V)
12000
1
10
VDS = 32V
VDS = 20V
16
12
8
4
Crss
0
ID = 100A
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
60
VDS , Drain-to-Source Voltage (V)
120
180
240
300
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY R
TJ = 200 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
1000
100
TJ = 25 ° C
10
1
0.0
100us
100
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
3.5
10
TC = 25 ° C
TJ = 200 ° C
Single Pulse
1
1ms
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF1704
200
LIMITED BY PACKAGE
RD
VDS
VGS
D.U.T.
I D , Drain Current (A)
150
RG
+
- VDD
VGS
100
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
50
VDS
90%
0
25
50
75
100
125
150
175
200
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
P DM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1704
EAS , Single Pulse Avalanche Energy (mJ)
D R IV E R
L
VDS
1600
1 5V
TOP
BOTTOM
1200
D .U .T
RG
+
- VD D
IA S
2V0GS
V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
ID
40A
77A
100A
800
400
0
25
50
75
100
125
150
175
200
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
+
V
- DS
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF1704
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
-
.
.
+
‚
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
„
+
.

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF1704
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10 .54 (.4 15)
10 .29 (.4 05)
2.87 (.11 3)
2.62 (.10 3)
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
-B 4.69 ( .18 5 )
4.20 ( .16 5 )
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/02
8
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