WIRELESS COMMUNICATIONS DIVISION TQ9222 Vdd LNA OUT MXR LO MXR 1900 1900 1900 Vdd LNA 1900 MXR RF 1900 DATA SHEET MXR IF 1900 Dual-Band TDMA LNA/Downconverter IC LNA IN 1900 Vdd LNA 800 MXR IF 800 LNA IN 800 MXR RF 800 LNA OUT Vdd 800 MXR 800 Features MXR LO 800 §Pin compatible with TQ5121 Product Description The TQ9222 is a 3-V, RF receiver IC designed specifically for dual-band TDMA applications. Its RF performance meets the requirements of products designed to the IS-136 and GSM standards. The TQ9222 is pin compatible with TQ5121 (cellular band LNA/Mixer) which enables handset designers to use strategic board platform strategy. The TQ9222 contains two separate LNA+Mixer circuits to handle both the 800 MHz cellular band and the 1900 MHz PCS band. The mixers use a high-side LO frequency, with the IF covering a range of 70-140 MHz. IF frequencies below 120 MHz are possible due to the ½-IF spurious signal rejection in the 1900 MHz LNA+Mixer. The IF outputs are designed for use of a common IF frequency. Most RF ports are internally matched to 50Ω, greatly simplifying the design and keeping the number of external components to a minimum. Separate supply voltage connections provide the required flexibility for dual-band operation. The TQ9222 achieves good RF performance with low current consumption, supporting long standby times in portable applications. Coupled with the very small QSOP-24 package, the part is ideally suited for dual-band mobile phones. §Single 3 V operation §Low-current operation §Low-frequency IF capability §Excellent ½ IF rejection §IF output combining §50 Ω matched inputs (most ports) §QSOP-24 plastic package Applications §IS-136 dual-band Mobile Phones Electrical Specifications1 §Tri-Mode Phones Parameter Gain Noise Figure Input 3rd Order Intercept DC supply Current Typ Units 800 band 17.5 MHz 1900 band 17.5 MHz 800 band 2.7 dB 1900 band 3.0 dB 800 band -9.0 dBm 1900 band -9.0 dBm 800 band 10.0 mA 1900 band Note 1: Test Conditions: Vdd=2.8V, Ta=25C, filter IL=2.5dB, 22.0 RF1=881MHz, §GSM dual-band Mobile Phones §Wireless local loop mA RF 2=1960MHz, LO1=991MHz, LO2= 2070MHz, IF=110MHz, LO Input=-7dBm; unless otherwise specified For additional information and latest specifications, see our website: www.triquint.com 1 TQ9222 Data Sheet Electrical Characteristics Parameter Conditions Min. RF Frequency Cellular band LO Frequency IF Frequency Max. Units 869 894 MHz PCS band 1930 1990 MHz Cellular band 950 1040 MHz PCS band 2010 2140 MHz 85 140 MHz Cellular band Typ/Nom LO input level -7 -4 0 dBm Supply voltage 2.7 2.8 3.0 V Cellular band 16.0 17.5 dB PCS band 16.0 17.5 dB Gain Variation vs. Temp. -40 to 85C -2.0 Noise Figure Cellular band PCS band Gain Input 3rd Order Intercept +2.0 dB 2.7 3.5 dB 3.0 3.5 dB Cellular band -11.0 -9.0 dBm PCS band -11.0 -9.0 dBm Return Loss LNA input – external match 10 dB Cellular and PCS band LNA output 10 dB Mixer RF input 10 dB Mixer LO input 10 dB Isolation LO to LNA in 40 dB Cellular and PCS bands LO to IF; after IF match 40 dB RF to IF; after IF match 40 dB IF Output Impedance Vdd = 2.8V; “ON” 500 Ohm Cellular and PCS band Vdd = 0V; “OFF” <50 Ohm Supply Current Cellular band 10 PCS band 22 13 mA mA Note 1: Test Conditions: Vdd=2.8V, Ta=25C, filter IL=2.5dB, RF1=881MHz, RF2=1960MHz, LO1=991MHz, LO2= 2070MHz, IF=110MHz, LO Input=-7dBm; unless otherwise specified Absolute Maximum Ratings Parameter Value Units DC Power Supply 5.0 V Power Dissipation 500 mW Operating Temperature -40 to 85 C Storage Temperature -60 to 150 C Signal level on inputs/outputs +20 dBm Voltage to any non supply pin -.3 to +.3 V 2 For additional information and latest specifications, see our website: www.triquint.com TQ9222 Data Sheet Typical Performance Test Conditions: TQ9222 Low Band (Unless Otherwise Specified): Vdd=2.8V, Ta=25C, filter IL=2.5dB, RF=881MHz, LO=991MHz, IF=110MHz, LO input=-7dBm Conversion Gain vs. Freq vs. Temp Noise Figure vs. Freq vs. Temp *Note: rolloff at -40C and +85C due to change in SAW filter Fc over temperature 5 20 Noise Figure (dB) Gain (dB) 19 18 17 16 -40C +25C +85C 15 872 3 2 -40C +25C +85C 1 14 869 4 875 878 881 884 887 890 869 893 872 875 Freq (MHz) 878 881 884 887 Idd vs. Freq vs. Temp Conversion Gain vs. Vdd vs. Temp 11 19 10 -40 C +25 C +85 C Idd (mA) 18 Gain (dB) 893 Freq (MHz) 20 17 16 9 -40C +25C +85C 15 8 7 14 2.5 2.6 2.7 2.8 2.9 Vdd (volts) 3 3.1 869 3.2 875 881 887 893 Freq (MHz) Idd vs. Freq vs. Vdd IIP3 vs. Vdd vs. Temp 11 -7 -8 -40C +25C +85C -9 Vdd= 2.8v Vdd= 2.7v Vdd= 3.0v 10 Idd (mA) IIP3 (dBm) 890 -10 9 -11 -12 8 2.5 2.6 2.7 2.8 2.9 Vdd (volts) 3 3.1 3.2 869 872 875 878 881 884 Freq (MHz) For additional information and latest specifications, see our website: www.triquint.com 887 890 893 3 TQ9222 Data Sheet Typical Performance: Test Conditions: TQ9222 High Band (Unless Otherwise Specified): Vdd=2.8V, Ta=25C, filter IL=2.5dB, RF=1960MHz, LO=2070MHz, IF=110MHz, LO input=-7dBm Noise Figure vs. Freq. vs. Temp. Conversion Gain vs. Freq. vs. Temp. 20 5 19 4 CG (dB) NF (dB) 18 3 17 -40 C +25 C +85 C 16 15 1930 1940 1950 1960 1970 Freq (MHz) 1980 2 1990 1 1930 -40 C +85 C +25 C 1940 Conversion Gain vs. Vdd vs. TEMP 1950 1960 1970 Freq (MHz) 1980 1990 Idd vs Freq. vs Temp. 21 26 20 24 18 Idd (mA) CG (dB) 19 22 17 16 -40 C +25 C +85 C 15 14 2.5 2.6 2.7 2.8 2.9 Vdd (v) 3 3.1 -40 C +25 C +85 C 20 3.2 18 1930 1940 IIP3 vs. Vdd vs. TEMP 1950 1960 1970 Freq (MHz) 1980 1990 Idd vs Freq. vs Vdd -7 26 24 -9 Idd (mA) IIP3 (dBm) -8 -40 C +25 C +85 C -10 -11 22 -12 -13 2.5 4 Vdd= 2.7v Vdd= 2.8v Vdd= 3.0v 20 2.6 2.7 2.8 2.9 Vdd (v) 3 3.1 3.2 18 1930 1940 For additional information and latest specifications, see our website: www.triquint.com 1950 1960 1970 Freq (MHz) 1980 1990 TQ9222 Data Sheet Application/Test circuit C6 LNA in B 1 24 2 23 3 22 4 21 L4 C5 V LNA B F2 2 1 N1 R5 V IF B L3 LO in B 5 C7 20 C4 IF out B R4 V MX B R2 6 19 7 18 L6 R6 C9 R3 C12 C8 L2 V MX A C11 L5 C3 IF out A LO in A 8 17 C10 V IF A R1 V LNA A 9 16 10 15 11 14 2 N2 1 C2 F1 C1 LNA in A L8 L1 12 13 TQ9222 Bill of Material for TQ9222 Receiver Application/Test Circuit Component Reference Designator Part Number Value Size Manufacturer Receiver IC U1 TQ9222 QSOP-24 TriQuint Semiconductor Capacitor C1 1.2pF 0603 Capacitor C2, C3, C4, C5 1000pF 0603 Capacitor C6 1.5pF 0603 Capacitor C7, C10 .01µF 0603 Capacitor C9 4.7pF 0603 Capacitor C8, C11 12pF, 10pF 0603 Capacitor C12 8.2pF 0603 Capacitor C13 1.5pF 0603 Capacitor C14, C15 (filter dependent) 0.5pF 0603 For additional information and latest specifications, see our website: www.triquint.com 5 TQ9222 Data Sheet Flter F1 869-894MHz Filter F2 1930-1990MHz Inductor L1 10nH 0603 Inductor L2 8.2nH 0603 Inductor L3 6.8nH 0603 Inductor L4 2.7nH 0603 Inductor L5, L6 180nH 0603 Inductor L7 (filter dpendent) 2.7nH 0603 Inductor L8 10nH 0402 Inductor L9 (filter dependent) 2.2nH 0603 Resistor R1-6 (power supply only) 10 Ohm 0603 L7 1 C13 2 1 C14 N1 1 N2 C15 1 2 N1 L9 * * OPTIONAL FILTER OUTPUT NETWORKS, DEPENDING UPON FILTER TYPE, BOARD LAYOUT, AND IF FREQUENCY * 6 denotes networks used for data sheet parameters For additional information and latest specifications, see our website: www.triquint.com TQ9222 Data Sheet Introduction The TQ9222 3V RFIC Downconverter is designed specifically for dual-band TDMA applications. The TQ9222 contains two separate LNA+Mixer circuits to handle both the 800 MHz cellular band and the 1900 MHz PCS band. The IF frequency range covers 70 to 140 MHz. Most of the ports are internally gate LO buffer provides a good input match, and supplies the voltage gain necessary to drive the mixer FET gate. The "opendrain " IF output allows for flexibility in matching to various IF frequencies and filter impedances (see Fig. 2). Fig 2. Cellular Band Mixer matched to 50 Ω simplifying the design and keeping the number of external components to a minimum. Separate supply voltage connections provide the required flexibility for dual-band operation. Operation: Please refer to the applications test circuit above. Mixer LO Input LO Bias and Tuning Mixer RF Input Mixer IF Output General Description Low Noise Amplifier (LNA) The LNA sections of the TQ9222 consist of two cascaded common source FETs (see Fig 1). Each LNA is designed to operate on supply voltages from 3V to 5V. The main differences between the high and low band LNAs are the bias circuits. The source terminal of the first stage has to be grounded very close to the pin (pin 1 for PCS band and pin 12 for cellular band). This will avoid a significant gain reduction due to degeneration. The LNA requires a matching circuit on the input to provide a good noise, gain and return loss performance. The output is close to PCS Band Mixer The PCS band mixer section of the TQ9222 is a balanced mixer with a single ended output. This balanced mixer topology minimizes the LO leakage out of the RF and IF ports thereby giving excellent LO suppression (see Fig. 3) Mixer RF Input Vdd 50 Ω for direct connection to a 50 Ω image stripping filter. Mixer LO Input Vdd Fig 1. TQ9222 Simplified Schematic of LNA Section LNA in Mixer IF Output LOAD LNA out BIAS BIAS Fig 3. PCS Band Mixer Fig 1. LNA Sections Cellular Band Mixer The cellular band mixer of the TQ9222 is implemented by a common source depletion FET. The mixer is designed to operate on supply voltages from 3V to 5V. An on-chip buffer amplifier simplifies direct connection of the LO input to a commercial VCO at drive levels down to -7dBm. The common- Low Noise Amplifier Application To obtain the best possible combination of performance and flexibility, the high and low band LNAs were designed to be used with off-chip input impedance matching. Based on the system requirements, the designer can make several performance trade-offs and select the best impedance match for the particular application. For additional information and latest specifications, see our website: www.triquint.com 7 TQ9222 Data Sheet LNA Input Match The input matching network primarily determines the noise and gain performance. Fig 4 shows a suggested input match for the high band. The low band uses a series 1.2pF capacitor and a shunt 10nH inductor. RF IN 1.2pF Pin 2 10nH Note: These values assume ideal components and neglect board parasitics. The discrepancy between these values and those of the typical application circuit are the board and component parasitics. Fig 4. LNA Input Match The LNA gain, noise figure and input return loss are a function of the source impedance (Zs), or reflection coefficient (Γs), presented to the input pin. Highest gain and lowest return loss occur when Γs is equal to the complex conjugate of the LNA input impedance. A different source reflection coefficient, Γopt, which is experimentally determined, will provide the lowest possible noise figure, Fmin. The noise resistance, Rn, provides an indication of the sensitivity of the noise performance to changes in Γs as seen by the LNA input. 4 RN Γopt − ΓS FLNA = FMIN + ⋅ Z 0 1 + Γopt 2 ⋅ 1 − Γs 2 2 ( ) Components such as filters and mixers placed after the LNA degrade the overall system noise figure according to the following equation: FSYSTEM = FLNA + F2 − 1 GLNA where FLNA and GLNA represent the linear noise factor and gain of the LNA and F2 is the noise factor of the next stage. Thus, the system noise figure depends on the highest gain and minimum noise figure of the LNA. 8 Designing the input matching network involves a compromise between optimum noise performance and best input return loss. For example, when the TQ9222 LNA is matched for optimum noise figure (1.35dB @ 880 MHz, and 1.45dB @ 1960 MHz), the input return loss is only about 4dB. On the other hand, when the LNA is matched for best return loss, the LNA noise figure is approximately 1.95dB @ 881 MHz and 2.14dB @ 1960MHz (see Table 1.) Low Band Freq (MHz) 835 850 865 880 895 910 925 |Γ opt| <Γopt 0.678 0.655 0.652 0.652 0.649 0.659 0.687 33 34 36 38 38 40 41 |Γ opt| <Γ opt 0.557 0.555 0.532 51 54 59 Fmin (dB) 1.34 1.38 1.36 1.35 1.36 1.35 1.35 Rn (Ω) 61.6 61.1 61.2 60.9 61.3 61.2 65.6 Fmin (dB) 1.44 1.45 1.61 Rn (Ω) 31.1 31.7 29.0 High Band Freq (MHz) 1860 1960 2060 Table 1. Noise Parameters LNA Output Match The output impedance of the high and low band LNAs, were designed to interface directly with 50Ω terminations. This internal match serves to reduce the number of external components required at this port. An additional benefit accrues as an improvement in IP3 performance, return loss and power gain. Low Band LNA Output The output of the low band LNA will most often be connected to an image stripping filter. Depending on the filter type, additional components might be needed to present a better match to the LNA output. The TQ9222 general applications circuit shows a TOYOCOM (637-881A) saw filter for the low band. A series inductor “L8”of 10nH is added to the filter input to improve the match. This series inductor also smoothes out excessive ripple in the filter passband improving the overall performance of the circuit. For additional information and latest specifications, see our website: www.triquint.com TQ9222 Data Sheet High Band LNA Output The output of the high band LNA can also be connected directly to the image stripping filter. However, it has been found that some SAW filters can cause low image rejection in the circuit as a whole, even as their individual characteristics show rejection of 30-40dB. It appears that the very low impedance of the SAW filter at the image frequency can be reflected back to the LNA output pin, lessening the effectiveness of the ground, and leaking into the mixer input. The optimum solution would be to include a 1/4 wavelength transmission line between the LNA output and SAW input in order to invert the impedance. However, a more compact solution is to bridge a small capacitor across a much shorter transmission line, giving a much longer effective length. (refer to Fig 9). It may also be possible to entirely use lumped components to accomplish the same. On the evaluation board, the transmission line is looped to that the capacitor can be varied in its positioning, thus facilitating tuning. Low Band Mixer: LO Port As mentioned earlier, a common gate buffer amplifier is positioned between the LO port and the mixer FET gate in order to provide a good impedance to the VCO and to allow operation at lower LO drive levels. The buffer amplifier provides the voltage gain needed to drive the gate of the mixer FET while consuming very little current (approximately 1.5mA). evaluation board, a small inductance “L8”is added on the SAW output to compensate. With certain longer line lengths it is possible to omit “L8”. Low Band LO Buffer Tune While the broadband input match of the LO buffer amplifier makes interfacing easy, the broadband gain means that thermal and induced noise at other frequencies can be amplified and injected directly into the LO port of the mixer. Noise at the IF frequency, and at LO +/- IF will be downconverted and emerge at the IF port, degrading the downconverter noise figure. As indicated on the diagram of Fig 5, in order to test the LO response to these spurious signals, a two-tone signal was injected into the LO port with the RF port terminated in 50Ω. One signal generator is set to the LO frequency at its normal LO drive level usually (-7 dBm). The second signal generator (spurious signal) is set to the LO +/- the IF frequency. The combined input power at mixer LO port has to be less than -50 dBm. The results shown in Table 2 indicate a good suppression of the interfering signals. TQ9222 Mixer RF IF 50 ohm LO + Because of the broadband 50Ω input impedance of the buffer amplifier and the internal DC blocking capacitor, the user’s VCO can be directly connected to the LO input via a 50Ω line with no additional components. Low Band Mixer Input Although the low band mixer input port has been designed with a 50Ω impedance, it has been found that LO leakage out through the pin can in some cases reflect off the SAW filter and travel back to the mixer input out of phase, causing some degradation in conversion gain and system noise figure. Sensitivity to the phenomena depends on the particular filter model and SAW-mixer transmission line length. On the Spectrum Analyzer Directional Coupler SIG 1: FLO SIG 2: FLO +/- IF Fig. 5 LO Spurious Response Diagram LO/Spurious Mixer LO Port C/V (MHz) Input Power (dB) 991/1101 -57 -71.7 991/1101 -58.9 -71.8 Table 2. LO Spurious Response Data For additional information and latest specifications, see our website: www.triquint.com 9 TQ9222 Data Sheet Calculation of Nominal L Value The node between the LO buffer amplifier and the mixer FET is brought out to Pin 7 (L_tune) and connected to a shunt inductor to AC ground. This inductor is selected to resonate with internal capacitance at the L0 frequency in order to suppress out-ofband gain and improve noise performance. If the calculated shunt inductor (L2) is not a standard value, the AC ground, implemented with C3, can be slide along the transmission line to adjust for the right inductance (see Fig 7). Once this is completed, the peak of the response should be centered at the center of the LO frequency band. Ground L= 1 , where ⋅C = 1.5 pF 2 C(2Π f ) but must be confirmed with measurements on a board approximating the final layout. Measuring the LO Frequency Response The frequency response of the LO driver amplifier can be measured using a semi-rigid probe (see Fig. 6) and a network analyzer. Connect port 1 to the LO input (Pin 8) of the TQ9222 with the source power set to deliver -7 dBm. Connect the coaxial probe to Port 2 and place the probe tip approximately 0.1 inch away from either Pin 7 or the inductor. Network Analyzer Port 1 Port 2 S21 (dB) Probe 7 8 TQ9222 -30 -32 -34 -36 -38 -40 -42 700 800 900 1000 1100 1200 Frequency (MHz) Fig 6. LO Buffer Amplifier Tuning 10 TQ9222 The internal capacitance of the LO amplifier output plus the stray capacitance on the board surrounding Pin 7 is approximately 1.8 pF. The inductor is selected to resonate with the total capacitance at the LO frequency using the following equation: 7 Placement of inductor will adjust between standard values Fig 7. Adjusting AC Ground Mixer IF Port The Mixer IF output is an "open-drain" configuration, allowing for flexibility in efficient matching to various filter types and at various IF frequencies. For evaluation of the LNA and mixer, it is usually necessary to impedance match the IF port to the 50Ω test systems. When verifying or adjusting the matching circuit on the prototype circuit board, the LO drive should be injected at pin 8 for the Low Band and pin 5 for the High Band at the nominal power level of -7 dBm, since the LO level does have an impact on the IF port impedance. There are several networks that can be used to properly match the IF port to the SAW or crystal IF filter. The mixer supply voltage is applied through the IF port, so the matching circuit topology must contain either an RF choke or shunt inductor. An extra DC blocking capacitor is not necessary if the output will be attached directly to a SAW or crystal bandpass filters. Figure 8 shows the IF matching network for the low band. A shunt L, series C, shunt C, is the simplest and requires the fewest components. The only difference with the high band is the series capacitor value of 10pF as opposed to 8.2pF. DC current can be easily injected through the shunt inductor and the series C provides a DC block, if needed. The shunt C, is used to reduce the LO leakage. For additional information and latest specifications, see our website: www.triquint.com TQ9222 Data Sheet 10pF Pin 14 8.2pF 180nH 0.01uF 10Ω Mx IF out that the length of the transmission line in the filter input also has an effect on Half-IF performance. Vdd 700 mils from pin to filter input Fig. 8 Suggested IF Match Half-IF Application TQ9222 Note: These values assume ideal components and neglect board parasitics. The discrepancy between these values and those of the typical application circuit are the board and component parasitics 23 22 When the intermediate frequency is less than twice the bandwidth of the receiver, Half-IF intermodulation spurs will fall within the frequency of operation. The image filter and mixer are the main circuit blocks that influence Half-IF spur suppression. However, it was shown experimentally that the preselector filter plays an important role as well in suppressing half-IF and image spurious signals. The preselector filter eliminates out of band spurs that could get amplified and degrade the performance. A narrow band pass filter and a high IF frequency are best to eliminate Half-IF problems. The other major contribution is mixer balance which is affected by two factors. First, the LO signal that leaks into the mixer inputs via parasitics. The second major contribution is the source impedance presented at the mixer RF input port. Depending on the board layout, the optimum mixer source impedance may shift which will degrade the Half-IF performance. It is possible to optimize mixer source impedance for Half-IF rejection at the LO frequency only. This will avoid affecting the desired signal to a large degree. Experience with the TQ9222, has shown that optimum mixer source impedance results in a significant mismatch causing gain reduction. Therefore, a tradeoff has to be made between optimum Half-IF performance and conversion gain. 1.8pF 21 1.8nH Fig. 9 Image and Half-IF circuit Note that if the final board layout is significantly different from our evaluation board, the network shown will only be useful as a guideline for development or to show what performance is possible with the TQ9222. A SAW filter will probably require a totally different type of network; and network component values vary widely between SAW filter models. Usually only a portion of the frequency band will be of concern for half-IF interference. It will depend on the injection mode of the LO signal and the IF frequency being used. For example If the LO is a high side injection such as the case of the TQ9222 and the IF = 110 MHz then (theoretically) we worry about the first 5 MHz of the band (1930-1935) only if we have ideal filters. Unfortunately most of the image stripping filters roll-off around 2000 MHz or higher hence the need to optimize performance up to 1945 MHz. The opposite occurs for low side LO. Since the frequency response of the preselector and image stripping filter help the performance at the high end of the band, the TQ9222 was tuned to give good half-IF rejection at the low end of the band over a wide temperature range (-40 °C to +85 The standard TQ9222 evaluation board uses a Toko TDFM1B1960L-11 dielectric filter in the high band. It was found that an Lnetwork, comprised of a series 1.8 nH inductor and a shunt 1.8 pF capacitor on the mixer input, produces the best Half-IF rejection and conversion gain. To a lesser extent, it was found °C). That was accomplished with a Pi-network* (between the filter output and the mixer input) comprise of a series L = 2.2 nH, shunt C = 1.0 and 0.5 pF. As expected this tuning network degraded the half-IF performance from 1970 to 1990 MHz specially at the extremes temperatures. However, once the For additional information and latest specifications, see our website: www.triquint.com 11 TQ9222 Data Sheet downconverter was tested with the preselector filter, the performance improved significantly. The results are shown in Table 3. Freq Temp Half-IF (MHz) (°C) (dB) 1930 -40 70.30 1940 -40 71.72 1980 +85 72.46 1990 +85 70.21 The preselector filter not only improved the half-IF performance but also the image rejection up to 70 dB, RF to IF isolation up to 33dB, and LO to IF isolation up to 43dB. *This is one of many different circuit topologies that could give similar results. The circuit selected that gives the best performance will depend on the PCB layout. Table 3. TQ9222 Performance with Preselector Filter (IF = 110 MHz, PLO = -7 dBm, Vdd = 2.8v) 12 For additional information and latest specifications, see our website: www.triquint.com TQ9222 Data Sheet Package Pinout LNA GND 1900 1 24 N/C LNA IN 1900 2 23 LNA OUT 1900 GND 3 22 GND Vdd LNA 1900 4 21 MXR RF 1900 MXR LO 1900 5 20 IF TUNE Vdd MXR 1900 6 19 MXR IF 1900 Vdd MXR 800 7 18 MXR IF 800 MXR LO 800 8 17 GND Vdd LNA 800 9 16 MXR RF 800 10 15 GND LNA IN 800 11 14 LNA OUT 800 LNA GND 800 12 13 N/C GND TQ9222 Pin Descriptions Pin Name Pin # Description and Usage LNA GND 1900 1 High-band LNA first-stage ground connection. Direct connection to ground. LNA IN 1900 2 High-band LNA input. DC blocked, requires external matching elements for noise match and match to 50Ω. Vdd LNA 1900 4 High-band LNA supply voltage. Local bypass cap required. MXR LO 1900 5 High-band Mixer LO input. Internally DC blocked. L3 required for 50Ω match. Vdd MXR 1900 6 High-band Mixer LO buffer supply voltage. Local bypass cap required. Vdd MXR 800 7 Low-band Mixer LO buffer supply voltage. Local bypass cap required. MXR LO 800 8 Low-band Mixer LO input. Matched to 50Ω. Internally DC blocked. Vdd LNA 800 9 Low-band LNA supply voltage. Local bypass cap required. LNA IN 800 11 Low-band LNA input. DC blocked, requires external matching elements for noise match and match to 50Ω. GND LNA 800 12 Low-band LNA first-stage ground connection. Connection to ground. N/C 13 Open pin. No connection. LNA OUT 800 14 Low-band LNA output. Matched to 50Ω. Internally DC blocked. For additional information and latest specifications, see our website: www.triquint.com 13 TQ9222 Data Sheet MXR RF 800 16 Low-band Mixer RF input. Matched to 50Ω, internally DC blocked. MXR IF 800 18 Low-band Mixer IF output. Open-drain output. Connection to Vdd required, external matching is required. MXR IF 1900 19 High-band Mixer IF output. Open-drain ouput. Connection to Vdd required, external matching is required. IF TUNE 20 Half-IF tuning inductor to ground for optimum half-IF performance in the high-band mixer. MXR RF 1900 21 High-band Mixer RF input. Matched to 50Ω, internally DC blocked. LNA OUT 1900 23 High-band LNA output. Matched to 50Ω, internally DC blocked. N/C 24 Open pin. No connection. GND 3, 10, 15, 17, 22 14 Ground connection. Use several via holes immediately adjacent to the pins down to backside ground plane. For additional information and latest specifications, see our website: www.triquint.com TQ9222 Data Sheet Package Type: Power QSOP-24 plastic Package For additional information and latest specifications, see our website: www.triquint.com 15 TQ9222 Data Sheet Additional Information For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: (503) 615-9000 Fax: (503) 615-8900 For technical questions and additional information on specific applications: Email: [email protected] The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright © 1998 TriQuint Semiconductor, Inc. All rights reserved. Revision B, December 1, 1998 16 For additional information and latest specifications, see our website: www.triquint.com