MOTOROLA MMFT6N03HD

Order this document through
Power Products Marketing
SEMICONDUCTOR TECHNICAL DATA
 Medium Power Surface Mount Products
These medium power SOT–223 devices are an advanced series
of power MOSFETs which utilize Motorola’s High Cell Density
HDTMOS process. These surface mount MOSFETs feature low
RDS(on) and true logic level performance. They are capable of
withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse
recovery time. SOT–223 HDTMOS devices are designed for use in
low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in peripheral products such as printers
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
•
•
•
•
•
•
•
•
TMOS POWER FET
6.0 AMPERES
30 VOLTS
RDS(on) = 0.050 OHM

D
4
G
1
2
3
S
CASE 318E–04, Style 3
TO–261AA
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
SOT–223 Saves Board Space and Height
Diode Is Characterized for Use In Bridge Circuits
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SOT–223 Package Provided
Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel
Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage – Continuous
Drain Current – Continuous(1)
Drain Current – Continuous @ 100°C(1)
Drain Current – Single Pulse (tp ≤ 10 µs)(1)
Total PD @ TA = 25°C(1)
Total PD @ TA = 25°C(2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH)
Thermal Resistance
– Junction to Ambient(1)
– Junction to Ambient(2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Symbol
Value
Unit
VDSS
VDGR
VGS
30
Vdc
30
Vdc
± 20
Vdc
ID
ID
IDM
6.0
3.7
40
Adc
PD
1.8
0.8
Watts
TJ, Tstg
EAS
– 55 to 150
Apk
°C
mJ
1300
°C/W
RθJA
RθJA
70
156
TL
260
°C
(1) When mounted on 1” sq. Drain pad on FR–4 bd material
(2) When mounted on minimum recommended Drain pad on FR–4 bd material
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MMFT6N03HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
30
—
—
—
—
—
—
10
100
—
—
100
1.0
1.5
2.0
—
—
0.040
0.053
0.050
0.060
gFS
6.0
9.5
—
mhos
pF
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
µAdc
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.5 Adc)
(VGS = 4.5 Vdc, ID = 4.3 Adc)
RDS(on)
Forward Transconductance (VDS = 10 Vdc, ID = 5.5 Adc)
Vdc
Ohm
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
Ciss
—
420
—
Coss
—
190
—
Crss
—
65
—
td(on)
—
6.0
15
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc,
Vd ID = 6.0
6 0 Adc,
Ad
VGS = 10 Vdc
Vdc,
RG = 6.0 Ω))
Fall Time
Gate Charge
((VDS = 24 Vdc,
Vd , ID = 6.0
6 0 Adc,
Ad ,
VGS = 10 Vdc)
tr
—
21
40
td(off)
—
25
50
tf
—
30
60
QT
—
15
30
Q1
—
2.0
—
Q2
—
4.3
—
Q3
—
4.3
—
—
—
0.92
0.80
1.2
—
trr
—
28
—
ta
—
13
—
tb
—
15
—
QRR
—
0.020
—
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
((IS = 6.0
6 0 Adc,
Ad , VGS = 0 Vdc,
Vd ,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
VSD
Vdc
ns
µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MMFT6N03HD
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
M
H
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
K
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
CASE 318E–04
ISSUE H
Motorola TMOS Power MOSFET Transistor Device Data
3
MMFT6N03HD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
4
◊
*MMFT6N03HD/D*
MMFT6N03HD/D
Motorola TMOS Power MOSFET Transistor
Device Data