Order this document through Power Products Marketing SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products These medium power SOT–223 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These surface mount MOSFETs feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. SOT–223 HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in peripheral products such as printers and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • • • • • • • • TMOS POWER FET 6.0 AMPERES 30 VOLTS RDS(on) = 0.050 OHM D 4 G 1 2 3 S CASE 318E–04, Style 3 TO–261AA Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs SOT–223 Saves Board Space and Height Diode Is Characterized for Use In Bridge Circuits IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SOT–223 Package Provided Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage – Continuous Drain Current – Continuous(1) Drain Current – Continuous @ 100°C(1) Drain Current – Single Pulse (tp ≤ 10 µs)(1) Total PD @ TA = 25°C(1) Total PD @ TA = 25°C(2) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH) Thermal Resistance – Junction to Ambient(1) – Junction to Ambient(2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol Value Unit VDSS VDGR VGS 30 Vdc 30 Vdc ± 20 Vdc ID ID IDM 6.0 3.7 40 Adc PD 1.8 0.8 Watts TJ, Tstg EAS – 55 to 150 Apk °C mJ 1300 °C/W RθJA RθJA 70 156 TL 260 °C (1) When mounted on 1” sq. Drain pad on FR–4 bd material (2) When mounted on minimum recommended Drain pad on FR–4 bd material This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MMFT6N03HD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 30 — — — — — — 10 100 — — 100 1.0 1.5 2.0 — — 0.040 0.053 0.050 0.060 gFS 6.0 9.5 — mhos pF OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc µAdc nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.5 Adc) (VGS = 4.5 Vdc, ID = 4.3 Adc) RDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 5.5 Adc) Vdc Ohm DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Output Capacitance Transfer Capacitance Ciss — 420 — Coss — 190 — Crss — 65 — td(on) — 6.0 15 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 15 Vdc, Vd ID = 6.0 6 0 Adc, Ad VGS = 10 Vdc Vdc, RG = 6.0 Ω)) Fall Time Gate Charge ((VDS = 24 Vdc, Vd , ID = 6.0 6 0 Adc, Ad , VGS = 10 Vdc) tr — 21 40 td(off) — 25 50 tf — 30 60 QT — 15 30 Q1 — 2.0 — Q2 — 4.3 — Q3 — 4.3 — — — 0.92 0.80 1.2 — trr — 28 — ta — 13 — tb — 15 — QRR — 0.020 — ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time ((IS = 6.0 6 0 Adc, Ad , VGS = 0 Vdc, Vd , dIS/dt = 100 A/µs) Reverse Recovery Stored Charge VSD Vdc ns µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMFT6N03HD PACKAGE DIMENSIONS A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN CASE 318E–04 ISSUE H Motorola TMOS Power MOSFET Transistor Device Data 3 MMFT6N03HD Motorola reserves the right to make changes without further notice to any products herein. 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