MOTOROLA MTP29N15E

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by MTP29N15E/D
SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
29 AMPERES
150 VOLTS
RDS(on) = 0.07 OHM
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.

• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
N–Channel
D
G
CASE 221A–06,
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
150
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
150
Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
29
19
102
Adc
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 W)
EAS
421
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
1.0
62.5
°C/W
TL
260
°C
Rating
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Apk
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
TMOS
 Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
1
MTP29N15E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
150
—
—
TBD
—
—
—
—
—
—
10
100
—
—
100
2.0
—
2.7
TBD
4.0
—
—
0.055
0.07
—
—
—
—
2.4
2.1
gFS
10
18
—
mhos
Ciss
—
2250
3150
pF
Coss
—
455
910
Crss
—
133
190
td(on)
—
17.5
40
tr
—
108
220
td(off)
—
90
180
tf
—
85
170
QT
—
78
110
Q1
—
12
—
Q2
—
37
—
Q3
—
23
—
—
—
0.92
TBD
1.3
—
trr
—
174
—
ta
—
140
—
tb
—
34
—
QRR
—
1.4
—
—
—
3.5
4.5
—
—
—
7.5
—
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ =125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 14.5 Adc)
RDS(on)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 29 Adc)
(VGS = 10 Vdc, ID = 14.5 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc)
Vdc
mV/°C
Ohms
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 75 Vdc,
Vd ID = 29 Adc,
Ad
VGS = 10 Vdc
Vdc,
RG = 9.1 Ω))
Fall Time
Gate Charge
((VDS = 120 Vdc,
Vd , ID = 29 Adc,
Ad ,
VGS = 10 Vdc)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
VSD
(IS = 29 Adc, VGS = 0 Vdc)
(IS = 29 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
((IS = 29 Adc,
Ad , VGS = 0 Vdc,
Vd ,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
Vdc
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MTP29N15E
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–06
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
3
MTP29N15E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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4
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Motorola TMOS Power MOSFET Transistor MTP29N15E/D
Device Data