SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A • High input impedance Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C G TO-264 G C Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL E E TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGL40N150 1500 ± 25 40 20 120 200 80 -55 to +150 -55 to +150 Units V V A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. --- Max. 0.625 25 Units °C/W °C/W SGL40N150 Rev. A1 SGL40N150 IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 --- ---- -250 ± 100 V uA nA IC = 40mA, VCE = VGE 3.5 5.0 7.5 V IC = 40A, VGE = 15V -- 3.7 4.7 V VCE = 10V, VGE = 0V, f = 1MHz ---- 4000 700 300 ---- pF pF pF -------- 90 230 245 230 140 25 45 200 700 400 400 170 25 60 ns ns ns ns nC nC nC Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2002 Fairchild Semiconductor Corporation VCC = 600V, IC = 40A, RG = 51Ω, VGE = 15V, Resistive Load, TC = 25°C VCE = 600V, IC = 40A, VGE = 15V SGL40N150 Rev. A1 SGL40N150 Electrical Characteristics of the IGBT T 10V o T C = 25 C 100 Collector Current, IC [A] o TC = 25 C 12V 15V o 60 Collector Current, IC [A] 80 Common Emitter VGE = 15V 20V Common Emitter VGE = 8V 40 20 TC = 125 C 80 60 40 20 0 0 0 2 4 6 8 0 Collector - Emitter Voltage, VCE [V] 4 6 8 10 Fig 2. Typical Output Characteristics 6 6000 Common Emitter VGE = 15V IC = 80A 5 Common Emitter V GE=0V, f=1MHz 5000 o T C=25 C C ies Capacitance [pF] Collector - Emitter Voltage, VCE [V] 2 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 4 IC = 40A 3 IC = 20A 2 1 4000 3000 2000 C oes 1000 C res 0 25 50 75 100 125 1 10 Collector - Emitter Voltage, V CE [V] o Case Temperature, TC [ C] Fig 4. Typical Capacitance vs. Collector to Emitter Voltage Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature 20 20 Common Emitter Common Emitter 0 o TC = 25 C Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] SGL40N150 120 100 16 12 8 80A 40A 4 20A 0 T C = 125 C 16 12 8 80A 40A 20A 4 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGL40N150 Rev. A1 Common Emitter VGE = ± 15V, RG = 51Ω Common Emitter VGE = ± 15V, RG = 51Ω o o TC = 25 C o TC = 125 C TC = 25 C o Switching Time [ns] Switching Time [ns] TC = 125 C tf td(off) td(on) tr 100 tf 100 20 30 40 50 60 70 10 80 20 30 Collector Current, IC [A] Fig 7. Turn-Off Characteristics vs. Collector Current T C = 25 C 1000 70 80 90 o o TC = 25 C T C = 125 C o TC = 125 C Switching Time [ns] Switching Loss [ µJ] 60 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A o Eoff 1000 50 Fig 8. Turn-On Characteristics vs. Collector Current Common Emitter VG E = ± 15V, RG = 51Ω 10000 40 Collector Current, IC [A] Eoff Eon tf tf td(off) 100 100 10 20 30 40 50 60 70 80 90 10 100 Gate Resistance, RG [Ω ] Collector Current, IC [A] Fig 10. Turn-Off Characteristics vs. Gate Resistance Fig 9. Switching Loss vs. Collector Current Common Emitter VCC = 600V, VGE = ± 15V IC = 40A 1000 Common Emitter VCC = 600V, VGE = ± 15V IC = 40A 10000 o o TC = 25 C o TC = 125 C Switching Loss [µJ] Switching Time [ns] TC = 25 C tr 100 td(on) o TC = 125 C Eoff Eoff Eon 1000 Eon 10 10 100 Gate Resistance, R G [Ω ] Fig 11. Turn-On Characteristics vs. Gate Resistance ©2002 Fairchild Semiconductor Corporation 10 100 Gate Resistance, RG [Ω ] Fig 12. Switching Loss vs. Gate Resistance SGL40N150 Rev. A1 SGL40N150 1000 1000 IC MAX (Pulsed) 100 IC MAX (Continuous) 50µs TC = 25 C 12 100µs Collector Current, I C [A] Gate - Emitter Voltage, VGE [V] o 10 8 6 4 10 1ms DC Operation 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 0.1 2 0 0.01 0 25 50 75 100 125 Gate Charge, Qg [nC] Fig 13. Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation 150 0.1 1 10 100 1000 Collector - Emitter Voltage, VCE [V] Fig 14. SOA Characteristics SGL40N150 Rev. A1 SGL40N150 Common Emitter R L = 15 Ω , VCC = 600V 14 SGL40N150 Package Dimension (8.30) (1.00) (2.00) (7.00) 20.00 ±0.20 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 (7.00) (2.00) (11.00) 1.50 ±0.20 ) .20 .00 0 ±0 0) 2.0 (R (R1 (0.50) ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGL40N150 Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5