FGPF45N45T tm 450V, 45A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A • High input impedance • Fast switching • RoHS complaint Applications • PDP System C TO-220F 1 1.Gate 2.Collector G 3.Emitter E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 450 V VGES Gate to Emitter Voltage ±30 V 180 A ICM (1) PD @ TC = 25oC Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC Pulsed Collector Current 51.6 W 20.6 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds o 300 C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 2.42 o RθJA Thermal Resistance, Junction to Ambient - 62.5 oC/W ©2007 Fairchild Semiconductor Corporation FGPF45N45T Rev. A 1 C/W www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT December 2007 Device Marking Device Package Packaging Type FGPF45N45T FGFP45N45TTU TO-220F Rail / Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 450 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.5 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 3.0 4.3 5.5 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V - 1.21 1.5 V IC = 45A, VGE = 15V - 1.60 - V IC = 45A, VGE = 15V, TC = 125oC - 1.57 - V - 2140 - pF VCE = 30V, VGE = 0V, f = 1MHz - 130 - pF - 102 - pF - 26 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGPF45N45T Rev. A VCC = 200V, IC = 45A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 45A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 45A, VGE = 15V 2 - 100 - ns - 170 - ns - 220 330 ns - 22 - ns - 90 - ns - 132 - ns - 280 - ns - 100 - nC - 15 - nC - 46 - nC www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 180 180 TC = 25 C 150 20V 12V 120 90 VGE = 8V 10V 90 VGE = 8V 60 30 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 TC = 25 C o TC = 125 C 120 Common Emitter VCE = 20V 150 o Collector Current, IC [A] Collector Current, IC [A] 15V 12V 120 30 90 60 o TC = 25 C o TC = 125 C 120 90 60 30 30 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.6 45A 1.4 30A 1.2 IC = 20A 12 3 Common Emitter o TC = 25 C 16 12 8 4 30A IC = 20A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF45N45T Rev. A 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 1.0 25 2 Figure 6. Saturation Voltage vs. VGE 1.8 Collector-Emitter Voltage, VCE [V] 20V 150 15V 60 o TC = 125 C 10V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics o 0 45A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 10000 Common Emitter Cies Coes Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 16 12 8 4 30A 1000 Cres 100 Common Emitter VGE = 0V, f = 1MHz 45A IC = 20A o TC = 25 C 0 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 500 Common Emitter o TC = 25 C IC MAX (Pulse) 10µs 100 12 VCC = 100V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 Figure 10. SOA Characteristics 15 200V 9 6 3 0 0 10 Collector-Emitter Voltage, VCE [V] 30 60 90 Gate Charge, Qg [nC] 100µs 1ms 10 10 ms 1 IC MAX (Continuous) Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 120 Figure 11. Turn-on Characteristics vs. Gate Resistance DC Operation 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 500 Switching Time [ns] Switching Time [ns] 100 tr td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 45A tf td(off) 100 Common Emitter VCC = 200V, VGE = 15V IC = 45A o TC = 25 C o TC = 25 C o TC = 125 C o 1 0 10 20 30 40 50 0 Gate Resistance, RG [Ω] FGPF45N45T Rev. A TC = 125 C 10 4 10 20 30 Gate Resistance, RG [Ω] 40 50 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 200 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C 100 o Switching Time [ns] Switching Time [ns] TC = 125 C tr tf 100 td(off) Common Emitter VGE = 15V, RG = 10Ω o td(on) TC = 25 C o TC = 125 C 10 10 20 30 40 10 10 45 20 Collector Current, IC [A] 30 Figure 15. Switching Loss vs. Gate Resistance 1000 Eoff Eoff Switching Loss [µJ] Switching Loss [µJ] 45 Figure 16. Switching Loss vs.Gate Resistance 1000 Eon 100 Common Emitter VCC = 200V, VGE = 15V IC = 45A 100 Eon 10 Common Emitter VGE = 15V, RG = 10Ω o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 10 40 Collector Current, IC [A] 0 10 20 30 40 1 10 50 20 Gate Resistance, RG [Ω] 30 40 45 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Rectangular Pulse Duration [sec] FGPF45N45T Rev. A 5 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT Typical Performance Characteristics FGPF45N45T 450V, 45A PDP Trench IGBT Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FGPF45N45T Rev. A 6 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FGPF45N45T Rev. A 7 www.fairchildsemi.com FGPF45N45T 450V, 45A PDP Trench IGBT TRADEMARKS