Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: Package: Pin Out: P-Channel, 1.8-V (G-S) MOSFET 1206-8 ChipFET® Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1 Summary of Performance: The Si5445BDC is the replacement to the original Si5445DC; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si5445BDC Si5445DC Unit Drain-Source Voltage VDS -8 -8 Gate-Source Voltage VGS +8 +8 -7.1 -7.1 ID -5.2 -5.2 IDM -20 -20 IS -2.1 -2.1 Continuous Drain Current TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25°C Power Dissipation TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient V A 2.5 2.5 PD 1.3 1.3 Tj & Tstg -55 to 150 -55 to 150 °C RthJA 50 50 °C/W W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Symbol Min VGS(th) -0.45 Si5445BDC Typ Max Min -1.0 -0.45 Si5445DC Typ Max Unit Static Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current -1 IDSS VGS = -4.5 V ID(on) VGS = -2.5 V -20 rDS(on) VGS = -1.8 V NS V +100 nA -1 µA -20 0.027 VGS= -4.5 V Drain-Source On-Resistance +100 0.033 A 0.030 0.035 0.035 0.043 0.040 0.047 0.050 0.060 0.052 0.062 Forward Transconductance gfs 18 Diode Forward Voltage VSD -0.8 -1.2 -0.8 18 -1.2 Qg Qgs Qgd Rg 14 1.8 3.3 8 21 17 2.8 2.6 NS 26 Ω S V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance nC Ω Switching Turn-On Time Turn-Off Time Source-Drain Reverse Recovery Time Document Number 74051 14-Apr-05 td(on) 12 20 15 25 tr 22 35 45 70 td(off) 75 115 110 165 tf 50 75 65 100 trr 75 115 30 60 ns www.vishay.com