Specification Comparison Vishay Siliconix Si6880AEDQ vs. Si6880EDQ Description: N-Channel, 1.8-V (G-S) Battery Switch with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6880AEDQ-T1 Replaces Si6880EDQ-T1 Si6880AEDQ-T1—E3 (Lead Free version) Replaces Si6880EDQ-T1 Summary of Performance: The Si6880AEDQ is the replacement for the original Si6880EDQ; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Symbol Si6880AEDQ Si6880EDQ Drain-Source Voltage Parameter VDS 20 20 Gate-Source Voltage VGS "12 "12 7.2 7.5 Continuous Drain Current TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25_C Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient ID Unit V 5.7 6 IDM 30 30 IS 1.5 1.6 1.5 1.78 0.96 1.14 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 84 70 _C/W PD A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si6880AEDQ Parameter Symbol Min VG(th) 0.8 Typ Si6880EDQ Max Min 0.9 0.45 Typ Max Unit "1000 "250 nA "10 "10 mA 1 1 mA Static Gate-Threshold Voltage Gate Body Leakage Gate-Body VGS = 4.5 V VGS = 12 V Zero Gate Voltage Drain Current On-State Drain Current IGSS IDSS VGS = 4.5 V ID(on) VGS = 4.5 V Drain-Source S On-Resistance O VGS = 2.5 V rDs(on) VGS = 1.8 V Forward Transconductance Diode Forward Voltage 20 V 20 A 0.014 0.018 0.015 0.018 0.016 0.022 0.017 0.022 0.018 0.025 0.020 0.016 0.65 1.1 27 40 gfs 45 VSD 0.61 1.1 39 35 W S V Dynamic Total Gate Charge Qg 22 Gate-Source Charge Qgs 2.0 3.0 Gate-Drain Charge Qgd 3.6 5.5 td(on) 1.0 1.5 1.5 2.3 tr 1.6 2.5 800 1200 td(off) 6 10 6 10 tf 5.5 10 5.5 10 nC Switching Turn-On Time Turn Off Time Turn-Off Document Number: 72902 22-Mar-04 ms www.vishay.com 1