Specification Comparison Vishay Siliconix Si7900AEDN vs. Si7900EDN Description: Dual N-Channel, 20-V (D-S) MOSFET with Common Drain Package: PowerPAKr 1212 Pin Out: Identical Part Number Replacements: Si7900AEDN-T1 Replaces Si7900EDN-T1 Si7900AEDN-T1—E3 (Lead Free version) Replaces Si7900EDN-T1 Summary of Performance: The Si7900AEDN is the replacement for the original Si7900EDN; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Symbol Si7900AEDN Si7900EDN Drain-Source Voltage Parameter VDS 20 20 Gate-Source Voltage VGS "12 "12 Continuous Drain Current TA = 25_C TA = 85_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25_C Power Dissipation TA = 85_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Unit V 8.5 9 6.4 6.4 IDM 30 30 IS 2.9 2.9 2.9 3.2 3.1 1.7 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 40 38 _C/W ID PD A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si7900AEDN Parameter Symbol Min VG(th) 0.4 Typ Si7900EDN Max Min 0.9 0.4 Typ Max Unit "1 "1 mA "10 "10 mA 1 1 mA Static Gate-Threshold Voltage Gate Body Leakage Gate-Body VGS = 12 V VGS = 4.5 V Zero Gate Voltage Drain Current On-State Drain Current IGSS IDSS VGS = 4.5 V ID(on) VGS = 4.5 V Drain-Source S On-Resistance O VGS = 2.5 V rDs(on) VGS = 1.8 V Forward Transconductance 20 V 20 A 0.020 0.026 0.020 0.026 0.022 0.030 0.025 0.031 0.026 0.036 0.031 0.039 gfs 25 VSD 0.65 1.1 0.65 1.1 Total Gate Charge Qg 10.5 16 12.5 18 Gate-Source Charge Qgs 1.9 2.7 Gate-Drain Charge Qgd 1.8 2.7 td(on) 0.85 1.25 0.7 1.0 tr 1.3 2.0 1.3 2.0 td(off) 8.6 13 5.5 8.0 tf 4.29 6.5 5.5 8.0 Diode Forward Voltage 25 W S V Dynamic nC Switching Turn-On Time Turn Off Time Turn-Off Document Number: 72907 22-Mar-04 ms www.vishay.com 1