Specification Comparison Vishay Siliconix TP0101K vs. TP0101T Description: Package: Pin Out: P-Channel,20-V (D-S) MOSFET, Low Threshold SOT-23 Identical Part Number Replacements: TP0101K-T1-E3 Replaces TP0101T-T1-E3 TP0101K-T1-E3 Replaces TP0101T-T1 Summary of Performance: The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate increases Gate-Body Leakage; otherwise, there is little variation regarding performance. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol TP0101K TP0101T Unit Drain-Source Voltage VDS -20 -20 Gate-Source Voltage VGS +8 +8 -0.58 -0.6 ID -0.46 -0.48 Continuous Drain Current TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25°C Power Dissipation TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient V A IDM -2 -3 IS -0.3 -0.6 0.35 0.35 PD 0.22 0.22 Tj & Tstg -55 to 150 -55 to 150 °C RthJA 357 357 °C/W W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Symbol Min VGS(th) -0.5 TP0101K Typ Max Min TP0101T Typ -1.0 -0.5 -0.9 Max Unit Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance -0.7 +5000 IGSS -1 IDSS VGS = -4.5 V VGS = -2.5 V VGS= -4.5 V VGS = -2.5 V Forward Transconductance Diode Forward Voltage ID(on) rDS(on) -1.2 -2.5 -0.5 -0.5 -1.5 V +100 nA -1 µA A 0.42 0.65 0.45 0.65 0.64 0.85 0.69 0.85 gfs 1300 VSD -0.9 -1.2 1300 -0.9 -1.2 Qg Qgs Qgd Rg 1400 300 250 150 2200 2020 180 720 NS 3000 Ω S V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance nC Ω Switchinga Turn-On Time Turn-Off Time td(on) 25 35 7 12 tr 30 45 25 35 td(off) 55 85 19 30 tf 38 60 9 15 ns NS denotes not specified in original datasheet Document Number 74071 11-May-05 www.vishay.com