ROITHNER RLT6650GLI

ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: [email protected] http://www.roithner-laser.com
RLT6650GLI
TECHNICAL DATA
High Power Visible Laserdiode
Structure: High Efficiency MOVCD Quantum Well Design
Lasing wavelength: 655 nm typ. multimode
NOTE!
Output power: 50 mW
LASERDIODE
Package: 9 mm
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Po
LD Reverse Voltage
VR(LD)
PD Reverse Voltage
VR(PD)
Operating Temperature
TC
Storage Temperature
TSTG
RATING
60
2
30
-10 .. +40
-40 .. +85
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
Ith
cw
Operation Current
Iop
Po = 50 mW
Operation Voltage
Vop
Po = 50 mW
Slope Efficiency
η
cw
Lasing Wavelength
Po = 50 mW
λp
Beam Divergence
θ//
Po = 50 mW
Beam Divergence
θ⊥
Po = 50 mW
Lasing Aperture
A
Po = 50 mW
Monitor Current
Im
Po = 50 mW
MIN
2.0
0.6
5
30
UNIT
mW
V
V
°C
°C
TYP MAX
120 135
180 250
2.2
2.5
0.7
1.0
655 660
7
14
38
40
20x1
0.5
2.0
UNIT
mA
mA
V
W/A
nm
°
°
µm²
mA