SMPS MOSFET PD - 95538 IRFS9N60APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS RDS(on) max ID 0.75Ω 9.2A 600V G DS D2Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 Units A W W/°C V V/ns °C 300 (1.6mm from case ) Applicable Off Line SMPS Topologies: l l Active Clamped Forward Main Switch Notes through are on page 9 www.irf.com 1 7/21/04 IRFS9N60APbF Static @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS ∆V(BR)DSS/∆TJ Min. Typ. Max. Units Conditions 600 ––– ––– V VGS = 0V, ID = 250µA ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.75 Ω VGS = 10V, ID = 5.5.A 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 600V, VGS = 0V µA ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 13 25 30 22 1400 180 7.1 1957 49 96 Max. Units Conditions ––– S VDS = 25V, ID = 3.1A 49 ID = 9.2A 13 nC VDS = 400V 20 VGS = 10V, See Fig. 6 and 13 ––– VDD = 300V ––– ID = 9.2A ns ––– R G = 9.1Ω ––– R D = 35.5Ω,See Fig. 10 ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 290 9.2 17 mJ A mJ Typ. Max. Units ––– ––– 0.75 40 °C/W Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state) Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 9.2 showing the A G integral reverse ––– ––– 37 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V ––– 530 800 ns TJ = 25°C, IF = 9.2A ––– 3.0 4.4 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFS9N60APbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 10 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 4.7V 20µs PULSE WIDTH TJ = 150 ° C 1 100 1 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150 ° C TJ = 25 ° C 1 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 10 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10.0 ID = 9.2A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFS9N60APbF 2400 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1600 Coss 1200 800 Crss 400 0 1 10 100 1000 ID = 9.2A 400V VDS = 480V VDS = 300V VDS = 120V 16 12 8 4 0 A FOR TEST CIRCUIT SEE FIGURE 13 0 10 40 50 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID , Drain Current (A) ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.2 10us 10 100us 1ms 1 0.1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFS9N60APbF 10.0 VGS 8.0 ID , Drain Current (A) RD V DS D.U.T. RG 6.0 + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 TC , Case Temperature ( ° C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D.U.T RG IAS 20V DRIVER + V - DD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) IRFS9N60APbF 600 TOP 500 BOTTOM ID 4.1A 5.8A 9.2A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 10 V QGS .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V .2µF IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFS9N60APbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFS9N60APbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E CT IF IE R L O GO N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" P AR T N U M B E R F 53 0 S AS S E M B L Y L O T CO D E D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E 8 P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E www.irf.com IRFS9N60APbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. Starting TJ = 25°C, L = 6.8mH Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS = 9.2A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS ISD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com 9