PHILIPS PHX18NQ20T

PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 August 2000
Product specification
M3D308
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHX18NQ20T in SOT186A.
2. Features
■
■
■
■
■
TrenchMOS™ technology
Low on-state resistance
Fast switching
Low thermal resistance
Isolated tab.
■
■
■
■
Off-line switched mode power supplies
Television and computer monitor power supplies
DC to DC converters
Motor control circuits
3. Applications
c
c
4. Pinning information
Table 1:
Pinning - SOT186A, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
Tab
isolated
Simplified outline
Symbol
isolated tab
d
g
03ab49
123
1.
TrenchMOS is a trademark of Royal Philips Electronics.
s
03ab30
PHX18NQ20T
Philips Semiconductors
N-channel FET
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
Tj = 25 to 150 °C
−
200
V
VDS
drain-source voltage (DC)
ID
drain current (DC)
Ths = 25 °C; VGS = 10 V
−
8.2
A
Ptot
total power dissipation
Ths = 25 °C
−
30
W
Tj
junction temperature
−
150
°C
130
180
mΩ
−
450
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 8 A; Tj = 25
oC
VGS = 10 V; ID = 8 A; Tj = 150 °C
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
Min
Max
Unit
VDS
Symbol Parameter
drain-source voltage (DC)
Tj = 25 to 150 °C
−
200
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
200
V
VGS
gate-source voltage (DC)
−
±20
V
ID
drain current (DC)
Ths = 25 °C; VGS = 10 V;
Figure 2 and 3
−
8.2
A
Ths = 100 °C; VGS = 10 V; Figure 2
−
5.2
A
IDM
peak drain current
Ths = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
−
33
A
Ths = 25 °C; Figure 1
Ptot
total power dissipation
−
30
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tamb = 25 °C
−
8.2
A
ISM
peak source (diode forward) current
Tamb = 25 °C; pulsed; tp ≤ 10 µs
−
33
A
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
2 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03aa11
120
03aa19
120
I
Pder 100
der 100
(%)
(%)
80
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
150
175
Tmb (oC)
0
25
50
75
100
125 150 175
o
Tamb ( C)
VGS ≥ 4.5 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ac74
102
RDSon = VDS / ID
ID
(A)
tp = 10µs
10
100µs
1 ms
δ=
P
1
tp
T
10 ms
D.C.
100 ms
t
tp
T
10-1
1
10
102
VDS (V)
103
Tamb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
3 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-hs)
thermal resistance from junction to heatsink
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air;
lead length ≤ 5 mm; Figure 4
Value
Unit
4.17
K/W
55
K/W
7.1 Transient thermal impedance
10
Zth(j-a)
(K/W)
1
03ac73
δ = 0.5
0.2
0.1
0.05
10-1
0.02
δ=
P
10-2
tp
T
single pulse
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
duration.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
4 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
200
−
−
V
Tj = −55 °C
178
−
−
V
Tj = 25 °C
2
3
4
V
Tj = 150 °C
1.2
−
−
V
Tj = −55 °C
−
−
6
V
Tj = 25 °C
−
0.05
10
µA
Tj = 150 °C
−
−
100
µA
−
10
100
nA
Tj = 25 °C
−
130
180
mΩ
Tj = 150 °C
−
−
450
mΩ
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
VDS = 200 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 8 A;
Figure 7 and 8
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; I = 8 A;
Figure 11
−
15
−
S
Ciss
input capacitance
−
1850
−
pF
Coss
output capacitance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
170
_
pF
Crss
reverse transfer capacitance
−
91
_
pF
Qg(tot)
total gate charge
−
40
−
nC
Qgs
gate-source charge
−
9
−
nC
Qgd
gate-drain (Miller) charge
−
22
−
nC
ton
turn-on time
toff
turn-off time
ID = 18 A; VDD = 160 V;
VGS = 10 V; Figure 14
VDD = 100 V; RD = 5.6 Ω;
VGS = 10 V; RG = 5.6 Ω;
Resistive load
−
3
_
ns
−
92
_
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 16 A; VGS = 0 V;
Figure 13
−
0.9
1.2
V
trr
reverse recovery time
130
−
ns
recovered charge
IS = 16 A;
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
−
Qr
−
0.8
−
µC
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
5 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03ac75
20
03ac82
20
VGS = 10V
Tj = 25 oC
ID 18
(A) 16
6V
18
ID
(A) 16
8V
14
5.5 V
VDS > ID X RDSon
14
12
12
10
10
8
150 oC
8
5V
6
6
4
4
4.5 V
2
2
0
Tj = 25 oC
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
1
2
3
4
VDS (V)
Tj = 25 °C
5
VGS (V)
6
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa31
03ac80
0.3
RDSon
(Ω)
4.5 V
5V
0.25
a
Tj = 25 oC
0.2
5.5 V
0.15
8 V
6V
0.1
VGS = 10 V
0.05
0
0
2
4
6
8
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60
10 12 14 16 18 20
ID (A)
Tj = 25 °C
20
60
100
140
180
Tj (oC)
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
-20
Rev. 01 — 28 August 2000
6 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03aa32
5
VGS(th)
4.5
4
(V)
03aa35
10-1
ID
(A)
max.
10-2
3.5
3
10-3
typ.
2.5
min
2
typ
max
10-4
min
1.5
1
10-5
0.5
0
10-6
-60
-20
20
60
100
140
Tj (oC)
180
0
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ac76
25
03ac78
104
Tj = 25 oC
VDS > ID X RDSon
Ciss, Coss,
Crss (pF)
gfs 20
(S)
Ciss
103
15
150 oC
10
Coss
102
5
Crss
0
0
2
4
6
8
10
12
14
10
16 18 20
ID (A)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
1
Rev. 01 — 28 August 2000
7 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
03ac77
20
IS
(A) 16
14
o
150 C
12
10
6
o
Tj = 25 C
4
0
0.4
0.6
0.8
1
VDD = 40V
VDD = 160V
2
1
0
2
0.2
ID = 18 A
Tj = 25 oC
7
6
5
4
3
8
0
03ac79
15
14
VGS
(V) 13
12
11
10
9
8
VGS = 0 V
18
1.2
0
VSD (V)
5
10 15 20 25 30 35 40 45 50 55 60
QG (nC)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9. Isolation characteristics
Table 6: Isolation characteristics
Symbol
Parameter
Visol
RMS isolation voltage
from all three terminals
to external heatsink.
Cisol
Capacitance from pin 2
(drain) to external
heatsink.
Conditions
Min.
Typ.
Max.
Unit
f = 50-60 Hz; sinusoidal
waveform; RH ≤ 65%; clean
and dust-free.
−
−
2500
V
−
10
−
pF
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
8 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
10. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
E
A
A1
P
q
D1
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.2
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
2.3
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
(2)
T
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
EIAJ
3-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
99-09-13
Fig 15. SOT186A.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
9 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
11. Revision history
Table 7:
Revision history
Rev Date
01
20000828
CPCN
Description
-
Product specification.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
10 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
12. Data sheet status
Datasheet status
Product status
Definition [1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2000 All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
11 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
12 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
13 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
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(SCA70)
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
14 of 15
PHX18NQ20T
Philips Semiconductors
N-channel FET
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
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liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 28 August 2000
Document order number: 9397 750 07452