PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHX18NQ20T in SOT186A. 2. Features ■ ■ ■ ■ ■ TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. ■ ■ ■ ■ Off-line switched mode power supplies Television and computer monitor power supplies DC to DC converters Motor control circuits 3. Applications c c 4. Pinning information Table 1: Pinning - SOT186A, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) Tab isolated Simplified outline Symbol isolated tab d g 03ab49 123 1. TrenchMOS is a trademark of Royal Philips Electronics. s 03ab30 PHX18NQ20T Philips Semiconductors N-channel FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit Tj = 25 to 150 °C − 200 V VDS drain-source voltage (DC) ID drain current (DC) Ths = 25 °C; VGS = 10 V − 8.2 A Ptot total power dissipation Ths = 25 °C − 30 W Tj junction temperature − 150 °C 130 180 mΩ − 450 mΩ RDSon drain-source on-state resistance VGS = 10 V; ID = 8 A; Tj = 25 oC VGS = 10 V; ID = 8 A; Tj = 150 °C 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Min Max Unit VDS Symbol Parameter drain-source voltage (DC) Tj = 25 to 150 °C − 200 V VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kΩ − 200 V VGS gate-source voltage (DC) − ±20 V ID drain current (DC) Ths = 25 °C; VGS = 10 V; Figure 2 and 3 − 8.2 A Ths = 100 °C; VGS = 10 V; Figure 2 − 5.2 A IDM peak drain current Ths = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 33 A Ths = 25 °C; Figure 1 Ptot total power dissipation − 30 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tamb = 25 °C − 8.2 A ISM peak source (diode forward) current Tamb = 25 °C; pulsed; tp ≤ 10 µs − 33 A © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 2 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 03aa11 120 03aa19 120 I Pder 100 der 100 (%) (%) 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 Tmb (oC) 0 25 50 75 100 125 150 175 o Tamb ( C) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of ambient temperature. Fig 2. Normalized continuous drain current as a function of ambient temperature. 03ac74 102 RDSon = VDS / ID ID (A) tp = 10µs 10 100µs 1 ms δ= P 1 tp T 10 ms D.C. 100 ms t tp T 10-1 1 10 102 VDS (V) 103 Tamb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 3 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-hs) thermal resistance from junction to heatsink Rth(j-a) thermal resistance from junction to ambient vertical in still air; lead length ≤ 5 mm; Figure 4 Value Unit 4.17 K/W 55 K/W 7.1 Transient thermal impedance 10 Zth(j-a) (K/W) 1 03ac73 δ = 0.5 0.2 0.1 0.05 10-1 0.02 δ= P 10-2 tp T single pulse t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 4 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 200 − − V Tj = −55 °C 178 − − V Tj = 25 °C 2 3 4 V Tj = 150 °C 1.2 − − V Tj = −55 °C − − 6 V Tj = 25 °C − 0.05 10 µA Tj = 150 °C − − 100 µA − 10 100 nA Tj = 25 °C − 130 180 mΩ Tj = 150 °C − − 450 mΩ Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current VDS = 200 V; VGS = 0 V IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 8 A; Figure 7 and 8 Dynamic characteristics gfs forward transconductance VDS = 25 V; I = 8 A; Figure 11 − 15 − S Ciss input capacitance − 1850 − pF Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 − 170 _ pF Crss reverse transfer capacitance − 91 _ pF Qg(tot) total gate charge − 40 − nC Qgs gate-source charge − 9 − nC Qgd gate-drain (Miller) charge − 22 − nC ton turn-on time toff turn-off time ID = 18 A; VDD = 160 V; VGS = 10 V; Figure 14 VDD = 100 V; RD = 5.6 Ω; VGS = 10 V; RG = 5.6 Ω; Resistive load − 3 _ ns − 92 _ ns Source-drain diode VSD source-drain (diode forward) voltage IS = 16 A; VGS = 0 V; Figure 13 − 0.9 1.2 V trr reverse recovery time 130 − ns recovered charge IS = 16 A; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V − Qr − 0.8 − µC © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 5 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 03ac75 20 03ac82 20 VGS = 10V Tj = 25 oC ID 18 (A) 16 6V 18 ID (A) 16 8V 14 5.5 V VDS > ID X RDSon 14 12 12 10 10 8 150 oC 8 5V 6 6 4 4 4.5 V 2 2 0 Tj = 25 oC 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 VDS (V) Tj = 25 °C 5 VGS (V) 6 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa31 03ac80 0.3 RDSon (Ω) 4.5 V 5V 0.25 a Tj = 25 oC 0.2 5.5 V 0.15 8 V 6V 0.1 VGS = 10 V 0.05 0 0 2 4 6 8 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 10 12 14 16 18 20 ID (A) Tj = 25 °C 20 60 100 140 180 Tj (oC) R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification -20 Rev. 01 — 28 August 2000 6 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 03aa32 5 VGS(th) 4.5 4 (V) 03aa35 10-1 ID (A) max. 10-2 3.5 3 10-3 typ. 2.5 min 2 typ max 10-4 min 1.5 1 10-5 0.5 0 10-6 -60 -20 20 60 100 140 Tj (oC) 180 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ac76 25 03ac78 104 Tj = 25 oC VDS > ID X RDSon Ciss, Coss, Crss (pF) gfs 20 (S) Ciss 103 15 150 oC 10 Coss 102 5 Crss 0 0 2 4 6 8 10 12 14 10 16 18 20 ID (A) Tj = 25 °C and 150 °C; VDS > ID × RDSon 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification 1 Rev. 01 — 28 August 2000 7 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 03ac77 20 IS (A) 16 14 o 150 C 12 10 6 o Tj = 25 C 4 0 0.4 0.6 0.8 1 VDD = 40V VDD = 160V 2 1 0 2 0.2 ID = 18 A Tj = 25 oC 7 6 5 4 3 8 0 03ac79 15 14 VGS (V) 13 12 11 10 9 8 VGS = 0 V 18 1.2 0 VSD (V) 5 10 15 20 25 30 35 40 45 50 55 60 QG (nC) Tj = 25 °C and 150 °C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 9. Isolation characteristics Table 6: Isolation characteristics Symbol Parameter Visol RMS isolation voltage from all three terminals to external heatsink. Cisol Capacitance from pin 2 (drain) to external heatsink. Conditions Min. Typ. Max. Unit f = 50-60 Hz; sinusoidal waveform; RH ≤ 65%; clean and dust-free. − − 2500 V − 10 − pF © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 8 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 10. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A E A A1 P q D1 T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.2 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 2.3 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC EIAJ 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 97-06-11 99-09-13 Fig 15. SOT186A. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 9 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 11. Revision history Table 7: Revision history Rev Date 01 20000828 CPCN Description - Product specification. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 10 of 15 PHX18NQ20T Philips Semiconductors N-channel FET 12. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2000 All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 11 of 15 PHX18NQ20T Philips Semiconductors N-channel FET © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 12 of 15 PHX18NQ20T Philips Semiconductors N-channel FET © Philips Electronics N.V. 2000. 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All rights reserved. 9397 750 07452 Product specification Rev. 01 — 28 August 2000 14 of 15 PHX18NQ20T Philips Semiconductors N-channel FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 August 2000 Document order number: 9397 750 07452