Dual, Low Power, Low Noise, Low Bias Current Precision Rail-to-Rail Output Op Amp AD8622 Preliminary Technical Data FEATURES Very low offset voltage: 50 μV B-grade maximum 100 μV A-grade maximum Low Bias Current: 200 pA 200 μA supply current Rail-to-rail output swing Low input offset drift: 0.8 μV/°C maximum Low voltage noise at low power 12 nV/√Hz Operating Temperature: −40°C to +125°C ±2.5 V to ±18 V operation PIN CONFIGURATIONS OUTA 8 V+ -INA 2 AD8622 7 OUTB +INA 1 3 TOP VIEW 6 -INB V- 4 5 +INB Figure 1. 8-Lead SOIC or MSOP APPLICATIONS Portable Precision instrumentation Process Control Inputs Laser diode control loops Strain gage amplifiers Medical instrumentation Thermocouple amplifiers GENERAL DESCRIPTION The AD8622 is a dual low power (330 μA max over temperature and supply), precision, rail-to-rail operational amplifiers. noise combined with very low input bias currents over the full operating temperature range. Operation is fully specified from ±5 V to ±15 V. The AD8622 is designed on ADI’s iPOLARTM process implementing bias cancellation circuits to guarantee low bias current over temperature. ADI’s proprietary iPolar process is an advanced bipolar technology implementing vertical junction isolation with lateral trench isolation, allowing for low noise performance amplifiers in smaller die size at faster speed and lower power. These operational amplifiers offer ultralow offset, drift, and voltage With typical offset voltage of only 10 μV, offset drift of 0.2 μV/°C, and noise of only TBD μV p-p (0.1 Hz to 10 Hz), these is perfectly suited for applications where large error sources cannot be tolerated. Many systems can take advantage of the low bias current, low noise, dc precision, and railto-rail output swing provided by the devices to maximize SNR and dynamic range for low power operation. Rev. PrA Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2008 Analog Devices, Inc. All rights reserved. AD8622 Preliminary Technical Data AD8622 SPECIFICATIONS ELECTRICAL SPECIFICATIONS VS = ±5.0 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Symbol Conditions VOS Grade B Grade A −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C Min IB Typ Max Unit 10 50 100 20 200 300 μV μV μV μV pA −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C Input Offset Current IOS 10 −40°C ≤ TA ≤ +125°C Input Voltage Range Common-Mode Rejection Ratio CMRR Open Loop Gain AVO Offset Voltage Drift −4 ΔVOS/ΔT OUTPUT CHARACTERISTICS Output Voltage High VOH Output Voltage Low VOL Short-Circuit Limit VCM = −3.8 V to +3.8 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C RL = 10 kΩ to ground, VO = −4.0 V to +4.0 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C RL = 2 kΩ to ground, VO = −4.0 V to +4.0 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C 1000 500 700 1250 0.2 0.2 0.6 0.6 ISC −4.8 −4.91 ±20 Output Current POWER SUPPLY Power Supply Rejection Ratio IO ±10 mA 120 dB Supply Current/Amplifier ISY DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density VS = ±2.0 V to ±18.0 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C VO = 0 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C 4.8 dB V/mV V/mV V/mV V/mV V/mV V/mV V/mV V/mV μV/°C μV/°C V V V V mA PSRR 1mA to ground −40°C ≤ TA ≤ +125°C 1mA to ground −40°C ≤ TA ≤ +125°C 4 120 pA pA pA V dB 200 330 dB μA μA μA SR GBP RL = 2 kΩ 0.4 600 V/μs kHz en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 10 Hz tbd 12 tbd μV p-p nV/√Hz pA/√Hz Rev. 0 | Page 2 of 4 Preliminary Technical Data AD8622 AD8622 SPECIFICATIONS VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified. Table 2. Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Symbol Conditions VOS Grade B Grade A −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C Min IB Typ Max Units 10 50 100 20 200 300 120 μV μV μV μV pA pA pA pA nA V dB 3000 dB V/mV 3000 V/mV V/mV V/mV 0.2 0.2 V/mV V/mV μV/°C μV/°C −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C Input Offset Current IOS 10 −40°C ≤ TA ≤ +125°C Input Voltage Range Common-Mode Rejection Ratio CMRR Open Loop Gain AVO Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Short-Circuit Limit Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density −14.0 ΔVOS/ΔT VOH VOL VCM = −13.5 V to 13.5 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C RL = 2 kΩ to ground, VO = −13.5 V to 13.5 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C RL = 10 kΩ to ground, VO = −13.5 V to 13.5 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C RL = 1mA to ground −40°C ≤ TA ≤ +125°C RL = 2 kΩ to ground −40°C ≤ TA ≤ +125°C ISC IO PSRR ISY VS = ±2.0 V to ±18.0 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C VO = 0 V −40°C ≤ TA ≤ +85°C −40°C ≤ TA ≤ +125°C 14.0 0.6 0.6 14.8 ±25 ±10 V V V V mA mA 120 dB −14.8 210 330 dB μA μA μA SR GBP RL =10 kΩ 0.45 600 V/μs kHz en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 10 Hz tbd 12 tbd μVp-p nV/√Hz pA/√Hz Rev. 0 | Page 3 of 4 AD8622 Preliminary Technical Data ABSOLUTE MAXIMUM RATINGS Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 3. Parameter Supply Voltage Input Voltage Differential Input Voltage Output Short-Circuit Duration to GND Storage Temperature Range RM, R Packages Operating Temperature Range Junction Temperature Range RM, R Packages Lead Temperature Range (Soldering, 10 sec) ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy Rating ±18 V ±V supply ±0.7 V Indefinite −65°C to +150°C −40°C to +125°C THERMAL RESISTANCE −65°C to +150°C +300°C Package Type 8-Lead MSOP (RM) 8-Lead SOIC_N (R) Table 4. Thermal Resistance θJA 210 158 θJC 45 43 Unit °C/W °C/W electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. 0 | Page 4 of 4 PR07527-0-7/08(PrA)