INFINEON Q62702

Silicon Dual Schottky Diode
BAT 114-099
Features
• High barrier diode for balanced mixers, phase
detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(taped & reel)
BAT 114-099
S7
Q62702-A1017
1)
Pin Configuration
Package1)
SOT-143
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Symbol
Reverse voltage
VR
IF
Top
Tstg
Ptot
Forward current
Operation temperature
Storage temperature
Power dissipation, TS ≤ 70 °C
Semiconductor Group
326
Limit Values
Unit
4
V
90
mA
− 55 to + 150
°C
− 55 to + 150
°C
100
mW
01.97
BAT 114-099
Thermal Resistance
(per diode)
Parameter
Symbol
Junction to soldering point
RthJS
RthJA
Junction to ambient1)
1)
Limit Values
Unit
≤ 780
K/W
≤ 1020
K/W
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
Electrical Characteristics
(per diode; TA = 25 °C)
Parameter
Symbol
Limit Values
min. typ.
Breakdown voltage
IR = 5 µA
VBR
Forward voltage
IF = 1 mA
IF = 10 mA
VF
Forward voltage matching1)
IF = 10 mA
∆ VF
Diode capacitance
VR = 0 V, f = 1 MHz
CT
Forward resistance
IF = 10 mA / 50 mA
RF
1)
Semiconductor Group
327
max.
V
4
∆VF is difference between lowest and highest VF in component.
Unit
−
−
V
−
−
0.6
0.7
0.7
0.8
−
−
10
−
0.25
0.5
mV
pF
−
5.5
−
Ω
BAT 114-099
Forward Current IF = f(VF)
Semiconductor Group
328