Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped & reel) BAT 114-099 S7 Q62702-A1017 1) Pin Configuration Package1) SOT-143 Dimensions see chapter Package Outlines Maximum Ratings (per diode) Parameter Symbol Reverse voltage VR IF Top Tstg Ptot Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Semiconductor Group 326 Limit Values Unit 4 V 90 mA − 55 to + 150 °C − 55 to + 150 °C 100 mW 01.97 BAT 114-099 Thermal Resistance (per diode) Parameter Symbol Junction to soldering point RthJS RthJA Junction to ambient1) 1) Limit Values Unit ≤ 780 K/W ≤ 1020 K/W Mounted on alumina 15 mm × 16.7 mm to 0.7 mm Electrical Characteristics (per diode; TA = 25 °C) Parameter Symbol Limit Values min. typ. Breakdown voltage IR = 5 µA VBR Forward voltage IF = 1 mA IF = 10 mA VF Forward voltage matching1) IF = 10 mA ∆ VF Diode capacitance VR = 0 V, f = 1 MHz CT Forward resistance IF = 10 mA / 50 mA RF 1) Semiconductor Group 327 max. V 4 ∆VF is difference between lowest and highest VF in component. Unit − − V − − 0.6 0.7 0.7 0.8 − − 10 − 0.25 0.5 mV pF − 5.5 − Ω BAT 114-099 Forward Current IF = f(VF) Semiconductor Group 328