Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting (SMD) Type BAT 65 1) Marking White/C Ordering Code Q62702-A990 Pin Configuration 1 2 C A Package1) SOD-123 Dimensions see page 313. Maximum Ratings Parameter Symbol Reverse voltage Forward current Average forward current, f = 50 Hz Surage forward current, t ≤ 10 ms VR IF IFAV IFSM Ptot Tj Tstg Total power dissipation, TS ≤ 100 °C Junction temperature Storage temperature range Semiconductor Group 1 Limit Values 40 750 Unit V mA 500 2.5 mA A 600 150 − 55 … + 150 mW °C °C 05.96 BAT 65 Thermal Resistance Parameter Symbol Limit Values Unit Junction - soldering point RthJS RthJA ≤ 80 K/W ≤ 150 K/W Limit Values Unit Junction to ambient1) 1) Package mounted on epoxy PCB 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Electrical Characteristics TA = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse current VR = 30 V VR = 30 V, TA = 65 °C IR Forward voltage IF = 10 mA IF = 100 mA IF = 250 mA IF = 750 mA VF Diode capacitance VR = 10 V, f = 1 MHz CT Semiconductor Group max. µA – – – – 50 900 – – – – 0.305 0.38 0.44 0.580 0.40 – 0.70 – V pF – 2 typ. 8.4 12 BAT 65 Forward Current IF = f (VF) Reverse Current IR = f (VR) Forward Current IF = f (TS; TA1)) 1) Package mounted on epoxy PCB 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 3 BAT 65 Permissible Load RthJS = f (tP) Semiconductor Group Permissible Pulse Load Ifmax/IfDC = f (tP) 4