PANASONIC MA2D749

Schottky Barrier Diodes (SBD)
MA2D749
Silicon epitaxial planar type
Unit : mm
For switching power supply
4.6 ± 0.2
15.0 ± 0.5
■ Features
+0
1.5 − 0.4
φ 3.2 ± 0.1
13.7 ± 0.2
4.2 ± 0.2
• TO-220D Package
• Allowing to rectify under (IF(AV) = 5 A) condition
• Single type
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
surge current*
IFSM
60
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
2.9 ± 0.2
3.0 ± 0.5
9.9 ± 0.3
2.6 ± 0.1
1.4 ± 0.2
0.8 ± 0.1
0.55 ± 0.15
5.08 ± 0.5
2.54 ± 0.3
1
2
1 : Cathode
2 : Anode
TO-220D Package
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
3
mA
Reverse current (DC)
IR
VR = 40 V
Forward voltage (DC)
VF
IF = 5 A
0.55
V
Direct current (between junction and case)
3.5
°C/W
Thermal resistance
Rth(j-c)
Note) Rated input/output frequency: 150 kHz
1
MA2D749
Schottky Barrier Diodes (SBD)
IF  V F
IR  V R
102
102
10
10
Ta = 125°C
Reverse current IR (mA)
Forward current IF (A)
Ta = 125°C
1
10−1
25°C
10−2
10−3
75°C
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
2
1.2
75°C
25°C
1
10−1
10−2
10−3
0
10
20
30
40
50
Reverse voltage VR (V)
60