Schottky Barrier Diodes (SBD) MA2D749 Silicon epitaxial planar type Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 ■ Features +0 1.5 − 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • TO-220D Package • Allowing to rectify under (IF(AV) = 5 A) condition • Single type ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 40 V Average forward current IF(AV) 5 A Non-repetitive peak forward surge current* IFSM 60 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C 2.9 ± 0.2 3.0 ± 0.5 9.9 ± 0.3 2.6 ± 0.1 1.4 ± 0.2 0.8 ± 0.1 0.55 ± 0.15 5.08 ± 0.5 2.54 ± 0.3 1 2 1 : Cathode 2 : Anode TO-220D Package Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 3 mA Reverse current (DC) IR VR = 40 V Forward voltage (DC) VF IF = 5 A 0.55 V Direct current (between junction and case) 3.5 °C/W Thermal resistance Rth(j-c) Note) Rated input/output frequency: 150 kHz 1 MA2D749 Schottky Barrier Diodes (SBD) IF V F IR V R 102 102 10 10 Ta = 125°C Reverse current IR (mA) Forward current IF (A) Ta = 125°C 1 10−1 25°C 10−2 10−3 75°C 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 2 1.2 75°C 25°C 1 10−1 10−2 10−3 0 10 20 30 40 50 Reverse voltage VR (V) 60