Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V（at IF = 1 A） + 0.1 0.25 − 0.05 Symbol Rating Unit Reverse voltage (DC) 1 1.85 ± 0.2 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.0 ± 0.2 1.9 ± 0.1 ■ Features 0 to 0.05 VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 1 A Non-repetitive peak forward surge current* IFSM 30 A Junction temperature Tj 125 °C Storage temperature Tstg −40 to +125 °C 0.9 ± 0.2 0.9 ± 0.2 3.8 ± 0.2 1 : Anode 2 : Cathode Half New Mini-Power Package Marking Symbol: A Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 1 A Terminal capacitance Ct VR = 10 V, f = 1 MHz Reverse recovery time* trr IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω Min Typ Max Unit 1 mA 0.50 50 V pF 30 ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2H735 Schottky Barrier Diodes (SBD) IF V F Ct VR IR V R 1 300 10 Ta = 125°C 75°C 25°C − 20°C 10−2 10−3 10−4 10−5 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 2 0.6 75°C 10−1 10−2 25°C 10−3 10−4 0 5 10 15 20 25 Reverse voltage VR (V) 30 Ta = 25°C Terminal capacitance Ct (pF) 1 Reverse current IR (mA) Forward current IF (A) Ta = 125°C 10−1 250 200 150 100 50 0 0 5 10 15 20 25 Reverse voltage VR (V) 30