PANASONIC MA3G762

Schottky Barrier Diodes (SBD)
MA3G762
Silicon epitaxial planar type (cathode common)
Unit : mm
16.2 ± 0.5
5.0 ± 0.2
3.2 ± 0.2
φ 3.2 ± 0.1
15.0 ± 0.2
• Forward current (average) IF(AV): 20 A type
• Repetitive peak reverse voltage VRRM: 90 V type
• High reliability caused by sealed in the TOP-3F (Full-pack
package)
• Cathode common dual type
15.0 ± 0.5
7.2 ± 0.3
2.0 ± 0.1
3.5 ±
12.7 ± 0.3 0.3
Solder Dip
■ Features
21.0 ± 0.5
0.7 ± 0.1
For switching power supply
2.0 ± 0.1
+ 0.2
1.1 ± 0.1
0.6 − 0.1
5.45 ± 0.3
10.9 ± 0.5
■ Absolute Maximum Ratings Ta = 25°C
1
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
90
V
Average forward current
IF(AV)
20
A
Non-repetitive peak forward
surge current*
IFSM
130
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
TOP-3F (TO-3F Full-Pack Package )
Marking Symbol: MA3G762
Internal Connection
Note) * : Sine half-wave; 10 ms/cycle
1
2
3
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 90 V
5
mA
Forward voltage (DC)
VF
IF = 10 A
0.85
V
Direct current (between junction and case)
1.5
°C/W
Thermal resistance
Rth(j-c)
Note) Rated input/output frequency: 100 MHz
1
MA3G762
Schottky Barrier Diodes (SBD)
IF  V F
PD(AV)  IF(AV)
IR  V R
102
102
40
Ta = 125°C
10
Reverse current IR (mA)
Forward current IF (A)
10
25°C
1
10−1
10−2
10−3
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
IF(AV)  TC
Average forward current IF(AV) (A)
t0
t1
24
t0 / t1 = 1/2
20
1/3
16
1/6
12
DC
8
4
0
20
40
60
80
100
120
Case temperature TC (°C)
2
100°C
1
10−1
25°C
10−2
10−3
0
20
40
60
80
100
Reverse voltage VR (V)
32
28
Average forward power PD(AV) (W)
Ta = 125°C
100°C
140
120
35
t0
t1
t0 / t1 = 1/6
30
25
1/3
20
1/2
DC
15
10
5
0
0
4
8
12
16
20
24
Average forward current IF(AV) (A)