DG201B/202B Vishay Siliconix Improved Quad CMOS Analog Switches 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—rDS(on): 45 Low Leakage—ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON: 120 ns Low Glitching—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG201A/202 Space Savings (TSSOP) Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits The DG201B/202B analog switches are highly improved versions of the industry-standard DG201A/202. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. up to 22-V input signals, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply voltages in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG201B and DG202B can handle The DG201B is a normally closed switch and the DG202B is a normally open switch. (See Truth Table.) DG201B Dual-In-Line, SOIC and TSSOP IN1 1 16 IN2 D1 2 15 D2 Logic DG201B DG202B S1 3 14 S2 0 ON OFF V– ON 13 V+ OFF 4 GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 1 Logic “0” 0.8 V Logic “1” 2.4 V Top View Document Number: 70037 S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600 4-1 DG201B/202B Vishay Siliconix ORDERING INFORMATION Temp Range Package 16-Pin Plastic DIP 16-Pin CerDIP –40 40 to 85 85_C C 16-Pin Narrow SOIC 16-Pin TSSOP Part Number DG201BDJ DG202BDJ DG201BDK DG202BDK DG201BDY DG202BDY DG201BDQ DG202BDQ DG201BAK 55 to 125 C –55 125_C 16 Pi CerDIP C DIP 16-Pin DG201BAK/883 DG202BAK DG202BAK/883 ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, DK Suffix) . . . . . . . . . . . . . . –65 to 150_C (DJ, DY, DQ Suffix) . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5V Reg SX Level Shift/ Drive INX V– V+ DX GND V– FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70037 S-52433—Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix Test Conditions Unless Specified Parameter Symbol V+ = 15 V, V– = –15 V VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match VANALOG rDS(on) Full VD = 10 V, IS = 1 mA DrDS(on) Room Full 45 Room 2 V W Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full 0.01 –0.5 –5 0.5 5 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full 0.01 0.5 5 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full 0.02 0.5 10 nA A Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL CIN – Full – Room 5 Room Full 120 Room Full 65 Room 1 Room 5 V mA pF Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance tON VS = 2 V S S it hi Ti T t Circuit Ci it See Switching Time Test tOFF Q CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK CL = 1000 pF, Vg = 0 V Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 W VS = 1 VRMS, f = 100 kHz Room 5 Room 16 Room 90 Room 95 ns pC pF F dB Power Supply 50 Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Power Supply Range for Continuous Operation VOP Full VIN = 0 or 5 V Document Number: 70037 S-52433—Rev. G, 06-Sep-99 50 mA V www.vishay.com S FaxBack 408-970-5600 4-3 DG201B/202B Vishay Siliconix Test Conditions Unless Specified Parameter Symbol V+ = 12 V, V– = 0 V VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit V W Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) Full VD = 3 V, 8 V, IS = 1 mA Room Full 90 Room 120 Room 60 Room 4 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q VS = 8 V S S See Switching it hi Ti Time Test T t Circuit Ci it CL = 1 nF, Vgen= 6 V, Rgen = 0 W ns pC Power Supply 50 Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Power Supply Range for Continuous Operation VOP Full VIN = 0 or 5 V 50 mA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70037 S-52433—Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix _ rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 110 100 100 90 90 80 5 V 70 r DS(on) ( ) 80 r DS(on) ( ) V+ = 15 V V– = –15 V 70 10 V 60 15 V 50 40 20 V 30 60 125_C 50 85_C 40 25_C 30 –55_C 20 20 10 0 –15 10 –20 –16 –12 –8 –4 0 4 8 12 16 20 –10 –5 0 5 10 15 VD – Drain Voltage (V) VD – Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages Input Switching Threshold vs. Supply Voltage 250 2.5 225 V+ = 5 V 200 2 150 V TH ( V ) r DS(on) ( ) 175 7V 125 10 V 100 1.5 1 12 V 15 V 75 50 0.5 25 0 0 0 2 4 6 8 10 12 14 4 16 6 8 VD – Drain Voltage (V) 12 14 16 18 20 V+ Positive Supply (V) Leakage Currents vs. Analog Voltage Leakage Currents vs. Temperature 80 60 10 1 nA V+ = 22 V V– = –22 V TA = 25_C V+ = 15 V V– = –15 V VS, VD = 14 V I S, I D – Current I S,I D – Current (pA) 40 20 0 –20 IS(off), ID(off) ID(on) 100 pA IS(off), ID(off) 10 pA –40 –60 –80 –20 –15 –10 Document Number: 70037 S-52433—Rev. G, 06-Sep-99 –5 0 5 Temperature (_C) 10 15 20 1 pA –55 –35 –15 5 25 45 65 85 105 125 Temperature (_C) www.vishay.com S FaxBack 408-970-5600 4-5 DG201B/202B Vishay Siliconix _ Switching Time vs. Single Supply Voltage Switching Time vs. Power Supply Voltage 400 500 V– = 0 V 400 Switching Time (ns) Switching Time (ns) 300 300 200 ton 200 ton 100 toff 100 toff 0 0 2 4 6 8 10 12 14 16 18 4 0 20 V+ – Positive Supply (V) 8 12 16 20 V+, V– Positive and Negative Supplies (V) QS, QD – Charge Injection vs. Analog Voltage Off Isolation vs. Frequency 30 120 V+ = 15 V V– = –15 V 110 20 0 OIRR (dB) Q – Charge (pC) 100 10 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V 90 RL = 50 80 70 –10 60 –20 –30 –15 50 40 –10 –5 0 5 10 15 10 k 100 k VANALOG – Analog Voltage (V) 1M 10 M f – Frequency (Hz) Supply Current vs. Switching Frequency I+ – Supply Current (mA) 4 3 2 1 0 1k 10 k 100 k 1M f – Frequency (Hz) www.vishay.com S FaxBack 408-970-5600 4-6 Document Number: 70037 S-52433—Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix +15 V V+ D S VS = +2 V VO IN tr <20 ns tf <20 ns 50% 0V tOFF CL 35 pF RL 1 kW 3V 3V Logic Input V– GND 90% Switch Output VO tON –15 V RL VO = VS RL + rDS(on) FIGURE 2. Switching Time +15 V C +15 V C V+ S1 VS S VS VO D 50 W IN1 0V, 2.4 V Rg = 50 W 0V, 2.4 V D1 Rg = 50 W V+ RL IN S2 VO D2 NC GND V– C RL IN2 0V, 2.4 V GND V– C –15 V C = RF bypass VS Off Isolation = 20 log XTALK Isolation = 20 log VO FIGURE 3. Off Isolation VS –15 V VO FIGURE 4. Channel-to-Channel Crosstalk +15 V DVO Rg VO V+ S D IN Vg CL 1000 pF 3V GND VO INX ON OFF ON V– DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO –15 V FIGURE 5. Charge Injection Document Number: 70037 S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600 4-7 DG201B/202B Vishay Siliconix +15 V V+ Logic Input Low = Sample High = Hold 1 kW +15 V +15 V –15 V – J202 LM101A VIN + 2N4400 5 MW 200 W 50 pF VOUT 5.1 MW 1000 pF DG201B V– J500 30 pF J507 –15 V = 25 ms = 1 ms = 5 mV = 5 mV/s Aquisition Time Aperature Time Sample to Hold Offset Droop Rate –15 V FIGURE 6. Sample-and-Hold +15 V 160 V1 C4 fC3 Select TTL Control fC2 Select fC1 Select 150 pF 120 C3 1500 pF Voltage Gain – dB fC4 Select C2 0.015 mF C1 0.15 mF 80 fC1 fC2 fC3 fL1 0 V– DG201B fC4 40 fL2 fL3 fL4 GND –40 1 –15 V 10 100 1k –15 V R1 = 10 kW LM101A + R2 = 10 kW VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX 1M rDS(on) Max Attenuation = 10 kW R3 R1 = 100 (40 dB) 1 2pR1CX fL (Unity Gain Frequency) = 30 pF 100 k f – Frequency (Hz) R3 = 1 MW +15 V – 10 k –47 dB FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency www.vishay.com FaxBack 408-970-5600 4-8 Document Number: 70037 S-52433—Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix VIN1 +5 V +15 V VL V+ 30 pF +15 V + LM101A VIN2 – +15 V DG419 –15 V RF1 18 k RF1 9.9 k RF1 100 k RG1 2 k RG2 100 RG3 100 DG202B CH GND V– –15 V Gain = Gain 1 (x1) RF + RG Gain 2 (x10) RG Gain 3 (x100) Gain 4 (x1000) V– GND Logic High = Switch On –15 V FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains Document Number: 70037 S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600 4-9