DISCRETE SEMICONDUCTORS DATA SHEET BFQ162 NPN video transistor Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistor BFQ162 FEATURES DESCRIPTION • Low output capacitance • Good thermal stability NPN video transistor in a SOT32 (TO-126) package. • Gold metallization ensures excellent reliability. PINNING PIN APPLICATIONS • Pre-stage driver in high-resolution colour graphics monitors. halfpage DESCRIPTION 1 emitter 2 collector 3 base 1 Top view Fig.1 2 3 MBC077 - 1 Simplified outline (SOT32; TO-126). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCER collector-emitter voltage RBE = 100 Ω − − 19 V IC collector current (DC) − − 500 mA Ptot total power dissipation Ts ≤ 115 °C; note 1 − − 3 W hFE DC current gain IC = 300 mA; VCE = 5 V; Tamb = 25 °C 50 60 − fT transition frequency IC = 300 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C 1 − − GHz Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VCER collector-emitter voltage RBE = 100 Ω − 19 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 500 mA Ptot total power dissipation Ts ≤ 115 °C; note 1; see Fig.3 − 3 W Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 02 2 Philips Semiconductors Product specification NPN video transistor BFQ162 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 20 K/W Ts ≤ 115 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)CBO collector-base breakdown voltage IC = 5 mA; IE = 0 MIN. 20 TYP. − MAX. UNIT − V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 10 − − V V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω 19 − − V V(BR)EBO emitter-base breakdown voltage IE = 1 mA; IC = 0 3 − − V ICES collector-emitter cut-off current VBE = 0 V; VCE = 10 V − − 100 µA hFE DC current gain IC = 300 mA; VCE = 5 V; Tamb = 25 °C; see Fig.4 50 60 − IC = 100 mA; VCE = 5 V; Tamb = 25 °C; see Fig.4 40 50 − fT transition frequency IC = 300 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 1 − − GHz Ccb collector-base capacitance IC = ic = 0; VCB = 5 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 − 4.2 − pF Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 5.8 − pF 1997 Oct 02 3 Philips Semiconductors Product specification NPN video transistor BFQ162 MBB894 MBB895 4 600 handbook, halfpage IC (mA) Ptot (W) 500 3 400 2 300 1 handbook, halfpage 0 200 0 4 8 0 12 50 100 150 VCEO (V) Fig.2 DC SOAR. 200 Fig.3 Power derating curve. MBB896 MBB436 80 Ts (oC) 8 handbook, halfpage handbook, halfpage Ccb (pF) hFE 7 70 6 60 5 50 4 3 40 0 200 400 600 0 10 IC (mA) VCE = 5 V; Tamb = 25 °C. Fig.4 1997 Oct 02 20 VCB (V) 30 f = 1 MHz; Tamb = 25 °C. DC current gain as a function of collector current; typical values. Fig.5 4 Collector-base capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN video transistor BFQ162 MBB435 3 handbook, halfpage fT (GHz) 2 1 0 0 100 200 IC (mA) 300 VCE = 5 V; f = 100 MHz; Tamb = 25 °C. Fig.6 1997 Oct 02 Transition frequency as a function of collector current; typical values. 5 Philips Semiconductors Product specification NPN video transistor BFQ162 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 bp 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1997 Oct 02 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 6 Philips Semiconductors Product specification NPN video transistor BFQ162 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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