PHILIPS PRF949

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PRF949
UHF wideband transistor
Preliminary specification
1999 Oct 29
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PRF949
PINNING SOT416 (SC75)
FEATURES
• Small size
PIN
• Low noise
1
base
• Low distortion
2
emitter
• High gain
3
collector
DESCRIPTION
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
3
handbook, halfpage
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT416
(SC75) package. The transistor is primarily intended for
wideband applications in the GHz-range in the RF front
end of analog and digital cellular telephones, cordless
phones, radar detectors, pagers and satellite TV-tuners.
1
2
MAM337
Marking code: V0
Fig.1 Simplified outline (SOT416).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
tbf
pF
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
7
9
−
GHz
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
NF
noise figure
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.5
2.5
dB
Ptot
total power dissipation
Ts = 90 °C; note 1
−
−
180
mW
Rth j-s
thermal resistance from junction
to soldering point
Ptot = 180 mW
−
−
335
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
1999 Oct 29
2
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PRF949
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
1.5
V
IC
DC collector current
−
50
mA
IC(AV)
average collector current
−
50
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
Ptot = 180 mW; Ts = 90 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1999 Oct 29
3
VALUE
UNIT
335
K/W
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PRF949
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V(BR)CBO
collector-base breakdown voltage
IC = 100 µA; IE = 0
20
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 100 µA; IB = 0
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 10 µA; IC = 0
1.5
−
−
V
VBEF
forward base-emitter voltage
IE = 25 mA
−
−
1.05
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
IEBO
emitter-base leakage current
VEB = 1 V; IC = 0
−
−
100
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
100
150
200
IC = 15 mA; VCE = 6 V
−
150
−
0.3
tbf
pF
AC characteristics
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
7
9
−
GHz
|s21|2
insertion gain
IC = 15 mA; VCE = 6 V; f = 1 GHz
13
15
−
dB
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.5
2.5
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
2.1
−
dB
NF
noise figure
Note
s 21 2
- dB
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
1999 Oct 29
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PRF949
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
1999 Oct 29
REFERENCES
IEC
JEDEC
EIAJ
SC-75
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PRF949
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Oct 29
6
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SCA 68
© Philips Electronics N.V. 1999
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Printed in The Netherlands
125006/03/pp7
Date of release: 1999
Oct 29
Document order number:
9397 750 06402